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1.
基于AZO的高效率磷光有机电致发光   总被引:2,自引:1,他引:1  
林杰  范翊  刘星元 《发光学报》2011,32(3):290-292
采用离子辅助的电子束双源共蒸技术制备了AZO薄膜,其载流子浓度和迁移率分别为4.39×1020 cm-3和15 cm2.V-1.s-1,在可见光范围内的平均透过率达到85.5%,功函数为5.05 eV。采用AZO作为阳极制备的磷光OLED得到最大亮度为192 400 cd/m2,最大电流效率为83.5 cd/A。结果表明,AZO作为OLED的阳极可获得优异的电致发光性能。  相似文献
2.
射频磁控溅射法制备N掺杂β-Ga2O3薄膜的光学特性   总被引:2,自引:2,他引:0  
在不同氨分压比(0~30%)下,用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性的影响.N掺杂β-Ga2O3薄膜的微结构、光学透过率、光学吸收和光学带隙随着氨分压比的增加发生了显著变化.观察到了绿光、蓝光和紫外发光带,并对每个发光带进行了讨论.  相似文献
3.
Nanostructured zinc oxide thin films formed by partially oriented hexagonal columns with dimensions of about 100 nm × 300 nm have been prepared by cathodic electrodeposition on conducting glass substrates. After subsequent thermal annealing in air at different temperatures (100-500 °C), structural information on the films was obtained by means of non-resonant Raman spectroscopy. Increasing the annealing temperature leads to a higher degree of crystallinity. The photoluminescence activity of the samples (at low temperature) also improves for increasing annealing temperatures in two ways: increasing the intensity of the near-band edge emission and decreasing the width of the excitonic peak. No emission band in the visible is detected, which attests the high quality of the ZnO nanocolumnar films.  相似文献
4.
Highly transparent conductive Dy2O3 doped zinc oxide (ZnO)1-x(Dy2O3)x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy2O3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10−4 Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)1-x(Dy2O3)x films first increased, then decreased with x increasing. The average transmission of Dy2O3 doped zinc oxide films in the visible range is above 90%.  相似文献
5.
Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al2O3) ceramic target in Ar + H2 ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H2-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H2-flux. The results indicate that H2-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10−4 Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H2-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.  相似文献
6.
Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 °C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.  相似文献
7.
Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 × 10−4 Ω cm at room temperature.  相似文献
8.
采用溶胶-凝胶法和高温固相反应法进行了铜铁矿结构单相CuBO2(B=Al,Cr,La)多晶陶瓷的制备,并采用脉冲激光沉积法(Pulsed laser deposition,PLD)制备了CuCrO2薄膜。结果表明:溶胶-凝胶法可以成功制备高纯CuAlO2和CuCrO2多晶材料。该方法还可以显著降低烧结温度且使烧结时间显著缩短;所制备的名义组分CuAlO2和CuCrO2样品均呈p型半导体导电行为,CuBO2的电导率随着B位离子半径的增大而明显减小;PLD法制备的CuCrO2薄膜呈高度c轴取向,厚度~200nm的薄膜在可见光区的平均透射率~80%。  相似文献
9.
Indium tin oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate its dependence on oxygen pressure, and rapid thermal annealing (RTA) temperature. High quality ITO films with a low resistivity of 3.3 × 10−4 Ω cm and a transparency above 90% were able to be formed at an oxygen pressure of 2.0 Pa and an RTA temperature of 400 °C. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-NIR grating spectrometer are used to investigate the properties of ITO films.  相似文献
10.
Present paper reports the synthesis, electrical and optical properties of p-type conducting and transparent silver indium oxide (AIO) thin films prepared on glass substrates by reactive electron beam evaporation technique at three substrate temperatures (50, 200 and 250 °C) and at five evaporation rates (0.05 to 16.0 nm/s). The source material is pure powders of Ag2O:In2O3=50:50 mol%. The AIO films are amorphous. The films, though not corresponding to Delafossite crystal structure, exhibit p-type conductivity, when prepared at an evaporation rate of 0.05 nm/s at all the three substrate temperatures. With increasing filament current, it is observed that (i) the electrical resistivity decreases and (ii) the refractive index of the films (at 632.8 nm, and is in the range: 1.219-1.211) decreases. The work function (effective Fermi level) has been measured on these samples by Kelvin Probe method. The results are explained on the basis of partial ionic charge and localization of covalent bonds in the AIO thin films.  相似文献
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