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1.
基于AZO的高效率磷光有机电致发光   总被引:2,自引:1,他引:1  
林杰  范翊  刘星元 《发光学报》2011,32(3):290-292
采用离子辅助的电子束双源共蒸技术制备了AZO薄膜,其载流子浓度和迁移率分别为4.39×1020 cm-3和15 cm2.V-1.s-1,在可见光范围内的平均透过率达到85.5%,功函数为5.05 eV。采用AZO作为阳极制备的磷光OLED得到最大亮度为192 400 cd/m2,最大电流效率为83.5 cd/A。结果表明,AZO作为OLED的阳极可获得优异的电致发光性能。  相似文献
2.
射频磁控溅射法制备N掺杂β-Ga2O3薄膜的光学特性   总被引:2,自引:2,他引:0  
在不同氨分压比(0~30%)下,用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性的影响.N掺杂β-Ga2O3薄膜的微结构、光学透过率、光学吸收和光学带隙随着氨分压比的增加发生了显著变化.观察到了绿光、蓝光和紫外发光带,并对每个发光带进行了讨论.  相似文献
3.
Nanostructured zinc oxide thin films formed by partially oriented hexagonal columns with dimensions of about 100 nm × 300 nm have been prepared by cathodic electrodeposition on conducting glass substrates. After subsequent thermal annealing in air at different temperatures (100-500 °C), structural information on the films was obtained by means of non-resonant Raman spectroscopy. Increasing the annealing temperature leads to a higher degree of crystallinity. The photoluminescence activity of the samples (at low temperature) also improves for increasing annealing temperatures in two ways: increasing the intensity of the near-band edge emission and decreasing the width of the excitonic peak. No emission band in the visible is detected, which attests the high quality of the ZnO nanocolumnar films.  相似文献
4.
Effects of deposition process parameters on the deposition rate and the electrical properties of In2O3–10 wt% ZnO (IZO) thin films were modeled and analyzed by using the error back-propagation neural networks (BPNN). Output models were represented by response surface plots and the fitness of models was estimated by calculating the root mean square error (RMSE). The deposition rate of IZO thin films is affected by the RF power and the substrate temperature. The electrical properties of the IZO thin films are mainly controlled by O2 ratio and the substrate temperature. The predicted output characteristics by BPNN can sufficiently explain the mechanism of IZO deposition process. Thus, neural network models can provide the reliable explanation of IZO film deposition.  相似文献
5.
We study theoretically the temperature dependence of the optical-absorption coefficient, for the visible region, in thin films of transparent conducting oxides by using the well-known Varshni approach relative to optical band-gap energy. Zero absorption is considered and an approximate formula for the coefficient of visible absorption is derived when photon energy is near the band-gap energy, that is, when absorption is negligible.  相似文献
6.
Transparent conductive ZnO:Al–Sc (1:0.5, 1:1, 1:1.5 at.% Al–Sc) thin films were prepared on glass substrates by sol–gel method. The microstructure, optical, and electrical properties of ZnO:Sc and ZnO:Al–Sc films were investigated. Results show that Sc-doping alone obviously decreases grain size and degrades the crystallinity; there is an amorphous phase on the surface of ZnO grains; the transmittance spectra fluctuate dramatically with a large absorption valley at about 430–600 nm. However, Al–Sc co-doping can stabilize grain size and improve the microstructure; an average visible transmittance of above 73% is obtained with no large absorption valley; the amorphous phase does not appear. The optical band gaps of ZnO:Sc and ZnO:Al–Sc films (3.30–3.32 eV) are blue-shifted relative to pure ZnO film (3.30 eV). Hall effects show that the lowest resistivity of 2.941 × 10−2 Ω cm and the maximum Hall mobility of 24.04 cm2/V s are obtained for ZnO:Al–Sc films while ZnO:Sc films do not exhibit any electrical conductivity. Moreover, there is an optimum atomic ratio with Al to Sc of 1:0.5–1 at.%. Although the resistivities are increased compared with that of ZnO:Al film, the Hall mobilities are raised by one order of magnitude.  相似文献
7.
The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated. We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 × 10−4 Ω cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was 3.62 × 10−3 Ω cm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching.  相似文献
8.
Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.  相似文献
9.
Highly transparent conductive Dy2O3 doped zinc oxide (ZnO)1-x(Dy2O3)x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy2O3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10−4 Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)1-x(Dy2O3)x films first increased, then decreased with x increasing. The average transmission of Dy2O3 doped zinc oxide films in the visible range is above 90%.  相似文献
10.
Transparent conducting nano-structured In doped zinc oxide (IZO) thin films are deposited on corning 7059 glass substrates by bipolar pulsed DC magnetron sputtering with variation of pulsed frequency and substrate temperature. Highly c-axis oriented IZO thin films were grown in perpendicular to the substrate on the 30 kHz and 500 °C. The IZO films exhibited surface roughness of 3.6 nm similar to the commercial ITO and n-type semiconducting properties with electrical resistivity (carrier mobility) of about 5 × 10−3 Ω cm (14 cm2/V s). The optical characterization showed high transmittance of over 85% in the UV-vis region and exhibited the absorption edge of near 350 nm. In micro-Raman spectra, the origin of two additional modes is attributed to the host lattice defect due to the addition of In dopant. These results suggest that the IZO film can possibly be applied to make transparent conducting electrodes for flat panel displays.  相似文献
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