Development of a Chitosan/Nickel Phthalocyanine Composite Based Conductometric Micro-sensor for Methanol Detection

Thin-film composite of chitosan/nickel phthalocyanine (NiPc) was electrochemically deposited on the fingers of interdigitated gold electrodes, applying chronoamperometric polymerization technique. The presence of crystallized NiPc in the chitosan was confirmed by EDX and FTIR analysis. Acetone, ethanol, and methanol gas-sensing properties of the films prepared at optimum conditions were studied at atmospheric temperature, through differential measurements at an optimized frequency of 10 kHz, using a lock-in amplifier. The conductometric sensor presents the highest sensitivity of 60.2 μS.cm⁻¹(v/v) for methanol and 700 ppm as the limit of detection. For validation, the methanol content of a commercial rubbing alcohol was determined.     

气相输运沉积制备c轴择优取向的碘化铋薄膜

铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。     

雾化辅助化学气相沉积法氧化镓薄膜生长研究

采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。     

光纤基底TiNi形状记忆合金薄膜制备工艺

将TiNi基记忆合金薄膜与光纤相结合可制成智能化、集成化且成本经济的微机电系统和微传感器件.本文采用磁控溅射法在二氧化硅光纤基底上制备TiNi记忆合金薄膜,系统讨论了溅射工艺参数以及后续退火处理对薄膜质量的影响.采用自研制光纤镀膜掩膜装置在直径为125μm的光纤圆周表面上形成均匀薄膜.实验表明:在靶基距、背底真空度、Ar气流量和溅射时间一定的条件下,溅射功率存在最佳值;溅射压强较大时,薄膜沉积速率较低,但薄膜表面粗糙度较小.进行退火处理后,薄膜形成较良好的晶体结构,Ti_49.09Ni_50.91薄膜中马氏体B19′相和奥氏体B2相共存,但以B19′为主.根据本文研究结果,在玻璃光纤基底上制备高质量的TiNi基记忆合金薄膜是可实现的,本工作为下一步研制微机电系统和微型传感器做了基础准备.     

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

聚变堆相关的液态金属膜流初步实验研究

在磁约束核聚变堆的面对等离子部件设计中,液态金属锂膜流因具有带走杂质、保护面对等离子固壁等优点而被认为是优选方案之一. 然而,如何克服聚变堆中强磁场环境下产生的磁流体力学效应并形成大面积均匀铺展锂膜流动是目前亟需解决的问题.本文通过搭建室温液 态镓铟锡回路和高温液态锂回路,开展了两种不同特性的液态金属膜流实验, 并采用传统可视化方法获得了展向磁场存在时镓铟锡和锂在导电底板形成的液膜流动表面特征.实验结果 表明: 无磁场时,两种液态金属膜流流动表面波动特性与常规流体膜流均一致, 即随着流动雷诺数的增加表面波动变得更为混乱; 而展向磁场存在时,镓铟锡膜流表面波动变得更为规则, 且沿着磁场方向平行排列,表现为拟二维波动的特征; 而锂膜流却产生了明显的磁流体 力学阻力效应,表现为在流动方向局部产生锂滞留现象, 且滞留点随雷诺数增大向下游移动. 最后通过膜流受力分析,进一步阐述了锂膜流受到比镓铟锡膜流更为严重磁流体力学效应影响的原因.      

温度对AZO薄膜红外辐射性能的影响

随着全球资源的减少和环境的恶化，节能减排已成为人们关注的焦点，具有保温隔热功能的低辐射玻璃成为研究的热点。提高玻璃保温隔热性能最有效的方法就是在其表面涂覆低辐射率层。原材料丰富、导电性能好、可见光透过率高等优势使得Al掺杂ZnO (AZO)薄膜成为最具潜力的低辐射率层。系统研究了温度对AZO薄膜红外辐射性能的影响，分析了变化机理。首先研究了在一定的温度下持续一段时间后，AZO薄膜的红外比辐射率的变化情况。然后研究了在变温环境中红外比辐射率的变化情况。采用直流磁控溅射法在室温下玻璃基片上沉积500 nm厚的AZO薄膜，将薄膜放到马弗炉中进行热处理，在100～400 ℃空气气氛下保温1 h，随炉冷却。采用X射线衍射仪对AZO薄膜进行物相分析，采用扫描电子显微镜观察薄膜表面形貌变化。利用四探针测试法测量AZO薄膜的电阻率，采用红外比辐射率测试仪测试薄膜红外比辐射率, 可见分光光度计测量可见光谱。测试的结果表明，薄膜热处理前后均为六角纤锌矿结构，(002)择优取向。300 ℃及以下热处理1 h后，(002)衍射峰增强，半高宽变窄，晶粒尺寸长大。随着热处理温度的升高，薄膜的电阻率先减小后增大，200 ℃热处理后的薄膜具有最小的电阻率(0.9×10-3 Ω·cm)。热处理温度升高，晶粒长大使得薄膜电阻率降低。热处理温度过高，薄膜会从空气中吸收氧，电阻率下降。薄膜的红外比辐射率变化趋势和电阻率的一致，在200 ℃热处理后获得最小值(0.48)。自由电子对红外光子有较强的反射作用，当电阻率低，自由电子浓度高的时候，更多的红外光子被反射，红外辐射作用弱，红外比辐射率小。薄膜的可见光透过率随着热处理温度的升高先减小后增大，200 ℃热处理后的薄膜的可见光透过率最小，但仍高达82%。这种变化是由于自由电子浓度变化引起的，自由电子对可见光有很强的反射作用。选取未热处理和200 ℃热处理后的样品进行变温红外比辐射率的测量，将样品放在可加热的样品台上，位置固定，在室温到350 ℃的升温和降温过程中每隔25 ℃测量一次红外比辐射率，结果表明，在室温到350 ℃的温度范围内，AZO薄膜的红外比辐射率在升温过程中随着温度的上升而增大，在降温过程中减小，经过整个升、降温过程后，薄膜的红外比辐射率增大。     

Protection of Li metal anode by surface-coating of PVDF thin film to enhance the cycling performance of Li batteries

The PVDF thin film on the surface of the lithium metal can highly suppress the lithium dendrites.     

Ultrathin Silicon Oxide Film-Induced Enhancement of Charge Separation and Transport of Nanostructured Titanium(IV) Oxide Photoelectrode

The development of nanostructured semiconductor electrodes represented by a mesoporous TiO₂ nanocrystalline (mp-TiO₂) film is currently bringing great progresses in photoelectrochemical (PEC) devices for solar-to-electricity and solar-to-chemical conversion. Two serious losses can occur in PEC devices: 1) recombination between the conduction band (CB) electrons and valence band (VB) holes in the bulk and at the surface and 2) back reaction or electron trapping by oxidant in the electrolyte solution during transport to the electron-collecting electrode. Thus, the major challenge in common with the nanostructured semiconductor photoanodes is to achieve efficient charge separation and electron transport. In this study, an ultrathin SiO_x layer was formed on both the external and the internal surface of mp-TiO₂ using an original chemisorption-calcination technique employing 1,3,5,7-tetramethyltetrasiloxane as a starting material. The SiO_x surface modification of the mp-TiO₂ photoanode drastically prolongs the mean lifetime of CB-electrons in TiO₂ because of enhanced charge separation and electron transport by the negative charge applied in aqueous electrolyte solution. We have demonstrated that the performance of a one-compartment H₂O₂-photofuel cell using mp-TiO₂ as the photoanode is greatly boosted by the surface modification with the SiO_x layer. We anticipate that this methodology is widely applicable to nanostructured metal oxide semiconductor electrodes, contributing to the improvement in the performance of PEC devices.     

Highly Sensitive AdSV Method for Fe(III) Determination in Presence of Solochrome Violet RS on Renewable Amalgam Film Electrode

The new DP AdSV method for high sensitive Fe(III) determination in the presence of Solochrome Violet RS was developed. The use of an innovative renewable amalgam film electrode Hg(Ag)FE allowed to obtain high sensitivity and significantly minimize the mercury consumption. The best results were obtained for surface area of Hg(Ag)FE equal to 11.8 mm². Instrumental parameters were optimized. The optimal results were obtained using differential pulse technique for the following values: sampling and waiting time ts=tw=10 ms, step potential Es=5 mV, pulse amplitude ΔE=50 mV. Measurements were conducted in 0.05 M acetate buffer (pH 5.6), the concentration of SVRS was equal to 5 μM. Deposition step was carried out at the potential ?400 mV for 20 s. Calculated detection limit for 40 s preconcentration time was equal to 1.4 nM (78 ng L^?1). The influence of the common in environment, organic and inorganic interferences was studied. The developed method for Fe(III) determination was successfully applied and validated by investigation of certified reference material SPS‐SW2 Batch 118 and recovery of Fe(III) from various spiked samples as snow, tap water and bottom sediments. The repeatability (for 50 nM of Fe(III)) of the developed method expressed as CV was equal 3.1 % (n=5).