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1.
《Annales de l'Institut Henri Poincaré (C) Analyse Non Linéaire》2021,38(5):1337-1371
In this paper we consider minimizers of the functional where is a bounded open set and where are the first k eigenvalues on Ω of an operator in divergence form with Dirichlet boundary condition and with Hölder continuous coefficients. We prove that the optimal sets have finite perimeter and that their free boundary is composed of a regular part, which is locally the graph of a -regular function, and a singular part, which is empty if , discrete if and of Hausdorff dimension at most if , for some . 相似文献
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《Operations Research Letters》2021,49(6):855-861
This letter studies the problem of minimizing increasing set functions, equivalently, maximizing decreasing set functions, over the base matroid. This setting has received great interest, since it generalizes several applied problems including actuator and sensor placement problems in control, task allocation problems, video summarization, and many others. We study two greedy heuristics, namely, the forward and reverse greedy. We provide two novel performance guarantees for the approximate solutions obtained by them depending on both submodularity ratio and curvature. 相似文献
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直拉硅单晶的生长过程涉及多场多相耦合与复杂的物理化学变化,其中工艺参数的波动是导致晶体直径不均匀的重要原因,如何实现工艺参数的控制以获得理想的、均匀的晶体直径具有重要的研究意义。本文分析现有控制方法存在不稳定以及控制效果不佳的问题后,提出基于贝叶斯参数优化的无模型自适应控制模型来控制硅单晶生长过程中的晶体直径。首先以坩埚上升速度与加热器的功率作为控制输入参数,晶体直径作为输出,搭建无模型自适应控制模型,并分析算法的稳定性。其次将控制模型进行仿真实验,发现硅单晶直径控制模型中不同的超参数设定会影响控制过程的迭代次数以及控制效果。最后,利用贝叶斯优化超参数的取值范围,并进行最终的仿真实验,结果表明,经贝叶斯参数优化后的控制模型计算快、迭代次数少,输出的晶体直径稳定,同时将生长工艺参数控制在实际生产要求范围内。因此,基于贝叶斯参数优化的无模型自适应控制实现了硅单晶直径均匀稳定的有效控制,具有结合工程背景的实际应用前景。 相似文献
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S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
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Petr Popov Sergei Grudinin Andrii Kurdiuk Pavel Buslaev Stephane Redon 《Journal of computational chemistry》2019,40(27):2391-2399
In this study, we propose a novel optimization algorithm, with application to the refinement of molecular complexes. Particularly, we consider optimization problem as the calculation of quasi-static trajectories of rigid bodies influenced by the inverse-inertia-weighted energy gradient and introduce the concept of advancement region that guarantees displacement of a molecule strictly within a relevant region of conformational space. The advancement region helps to avoid typical energy minimization pitfalls, thus, the algorithm is suitable to work with arbitrary energy functions and arbitrary types of molecular complexes without necessary tuning of its hyper-parameters. Our method, called controlled-advancement rigid-body optimization of nanosystems (Carbon), is particularly useful for the large-scale molecular refinement, as for example, the putative binding candidates obtained with protein–protein docking pipelines. Implementation of Carbon with user-friendly interface is available in the SAMSON platform for molecular modeling at https://www.samson-connect.net . © 2019 Wiley Periodicals, Inc. 相似文献