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排序方式: 共有277条查询结果,搜索用时 15 毫秒
1.
《Current Applied Physics》2020,20(8):953-960
Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and Jsc as high as 33.0 mA/cm2 has been obtained. 相似文献
2.
Murtaza Bohra Arun Showry Bandaru Panagiotis Grammatikopoulos Vidyadhar Singh 《Materials Today Chemistry》2020
An increasing trend toward integration of polymers in microelectronics and organic electronics has recently boosted research focusing in metal-polymer interfaces. These two materials differ vastly, with the former forming dense, crystalline, cohesive structures and the latter forming open structures bound together by weak van der Waals forces. As a result, there is dire need to assess their surface features (e.g., roughness) and correlate them with corresponding growth parameters, as metal-polymer interfaces are mainly determined by the preparation process. Here, we report a laboratory-based grazing-incidence small-angle x-ray scattering (GISAXS) study on distinct gold-polymer interfaces fabricated with different growth mechanisms, utilizing in-plane and oblique sputter geometries. GISAXS provided an improved analytic scheme for the buried surface in free-standing 2D gold-polymer nanosheets (with 19% porosity) revealing their fractal structure (Porod slope: ?1.71). Two quantitative approaches (Height-Height Correlation and Power Spectral Density functions) were used to describe rough surfaces characterized by Atomic Force Microscopy (AFM) in consort with GISAXS data; different correlation length dependencies on growth time were revealed for gold rough surfaces grown on bare and polymerized Si. The results are considered pertinent to interfacial nanoscience and engineering, enabling statistical data collection from large surface areas, in a fast and nondestructive manner. 相似文献
3.
Fan YeXing-Min Cai Fu-Ping DaiShou-Yong Jing Dong-Ping ZhangPing Fan Li-Jun Liu 《Physica B: Condensed Matter》2011,406(3):516-519
Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O2 flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In2O3 and monoclinic CuO. Transmittance of the films decreases with increase in O2 flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In2O3 and CuO. The sheet resistance of the films decreases with increase in O2 flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In2O3 and the conduction mechanism of Cu-In-O thin films is through O vacancy. 相似文献
4.
Kazuhiro Kato Hideo OmotoTakao Tomioka Atsushi Takamatsu 《Applied Surface Science》2011,257(21):9207-9212
The influence of high-temperature annealing on the electrical properties and microstructure of tin-doped indium oxide (ITO) thin films was investigated as a function of oxygen gas flow ratio to argon gas during the sputtering deposition. The ITO thin films were annealed at 500 °C in air after the deposition. It was found that the ITO thin films, which were deposited in relatively low oxygen gas flow ratio, exhibited high Hall mobility and low-resistivity after the annealing. Furthermore, the X-ray reflectivity and diffraction measurement revealed that the ITO thin film with low-resistivity after annealing exhibited high packing density, smooth surface and low crystallization degree. It can be considered that the carrier electron scattering was suppressed with increasing in the packing density of the ITO thin film; as a result, the Hall mobility and resistivity were improved. 相似文献
5.
In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se2 (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity. 相似文献
6.
Duy-Thach PhanGwiy-Sang Chung 《Applied Surface Science》2011,257(9):4339-4343
Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k2) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C. 相似文献
7.
使用分子动力学模拟方法研究了入射能量对C+离子与Be样品表面相互作用的影响.模拟结果表明,随着C+离子的入射能量增大,C+离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C 原子数量变化不大,在C+离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C+离子注入剂量的增加,Be原子的溅射... 相似文献
8.
BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4. 相似文献
9.
The exceedingly fragile nature of thermally grown Au-black coating makes handling and patterning a critical issue. Infrared absorption characteristics of near atmospheric, N2 ambient DC sputtered Au thin films are studied for this purpose. The thin Au films are sputtered at different chamber pressures in Ar and N2/Ar gas ambient from 4.5 to 8.0 mbar and optimized for enhanced infrared absorption. The absorber film sputtered in N2/Ar ambient at 8.0 mbar chamber pressure offers significant absorption of medium to long wave infrared radiations. The micro-patterning of sputtered Au thin film is carried out by using conventional photolithography and metal lift off methods on a prefabricated µ-infrared detector array on Si (1 0 0) substrate. The steady state temperature response of sputtered film has been examined using nondestructive thermal imaging method under external heating of the detector array. 相似文献
10.
A. Annadurai S. Jayakumar M. Manivel Raja R. Gopalan V. Chandrasekaran 《Journal of magnetism and magnetic materials》2009,321(6):630-634
Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L21 austenitic phase. 相似文献