Structure transition and photoluminescence of CdS/Si nanoheterostructure array on thermal annealing

CdS/Si heterojunctions have been prepared through growing CdS nanocrystallites (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) by the chemical bath deposition method. Cadmium nanocrystallites (nc-Cd) have been observed and ascribed to the reducibility of Si-NPA. The reason for the appearance of CdO is indistinct and the related work will be done in the future. The blue, green and red emissions are ascribed to the silicon oxide layer, band gap of nc-CdS and the sulphur vacancies, respectively. Redshift and blueshift with the annealing temperature about green emissions are contributed to quantum size effect and the structure transition from nc-Cd to CdO. It is beneficial for investigating the structures and defects to the application of CdS/Si in the optoelectronic field.     

Elimination of bis(trimethylsilyl)stannylene from tris(trimethylsilyl)stannylated zirconocene and hafnocene chlorides

Reactions of (Me₃Si)₃SnK with Cp₂MCl₂ (M = Zr, Hf) give the respective stannylated metallocene chlorides. These complexes display a tendency to eliminate bis(trimethylsilyl)-stannylene under Cp₂M(Cl)SiMe₃ formation.     

微氧化烧结制备掺杂Y2O3的SiC陶瓷及含镉模拟废水处理

采用了微氧化烧结制备了不同Y₂O₃质量分数（0%、2%、4%、6%）的多孔SiC陶瓷，通过对陶瓷的晶体结构、微观形貌、物理性能和Cd²⁺的去除率测试发现：添加了Y₂O₃的SiC陶瓷出现了较多的第二相Y₂SiO₇、Y₅Si₃C_0.5，随着Y₂O₃的质量分数增加逐渐升高，主相的衍射峰的强度有降低。扫描电子显微镜测试发现，SiC陶瓷的尺寸在2.5 μm，Y₂O₃引入后，SiC陶瓷的晶粒尺寸降低，高温烧结时液相的含量增加，熔体粘度降低，晶粒结合更加紧密，Y₂O₃的引入提高了多孔陶瓷的体积密度，Y₂O₃质量分数为6%SiC的体积密度最大为2.21 g/cm³。热导率随着Y₂O₃质量分数的增加呈现出先升高后降低的趋势。金属Cd²⁺的过滤测试表明：随着Y₂O₃质量分数增加，Cd²⁺的残留质量浓度、膜通量和去除率先降低后升高，当掺杂质量分数为4%时，Cd²⁺残留质量浓度最低为0.042 mg/L，膜通量达到了最大值572 L/（m²·h），去除率最大为99.95%，相比未掺质量分数杂体系的去除率提高了0.14%。随着溶液pH值的逐渐增大，金属Cd²⁺的残留质量浓度逐渐降低、去除率逐渐升高，pH≥9时最终均趋于稳定。综合来看，多孔SiC陶瓷的助烧剂Y₂O₃最佳掺量为4%。     

Highly Selective Photoelectroreduction of Carbon Dioxide to Ethanol over Graphene/Silicon Carbide Composites

Using sunlight to produce valuable chemicals and fuels from carbon dioxide (CO₂), i.e., artificial photosynthesis (AP) is a promising strategy to achieve solar energy storage and a negative carbon cycle. However, selective synthesis of C₂ compounds with a high CO₂ conversion rate remains challenging for current AP technologies. We performed CO₂ photoelectroreduction over a graphene/silicon carbide (SiC) catalyst under simulated solar irradiation with ethanol (C₂H₅OH) selectivity of>99 % and a CO₂ conversion rate of up to 17.1 mmol g_cat⁻¹ h⁻¹ with sustained performance. Experimental and theoretical investigations indicated an optimal interfacial layer to facilitate the transfer of photogenerated electrons from the SiC substrate to the few-layer graphene overlayer, which also favored an efficient CO₂ to C₂H₅OH conversion pathway.     

CycloSiFA: The Next Generation of Silicon-Based Fluoride Acceptors for Positron Emission Tomography (PET)

The ring-opening Si-fluorination of a variety of azasilole derivatives cyclo-1-(iPr₂Si)−4-X−C₆H₃−2-CH₂NR ( 4 : R=2,6-iPr₂C₆H₃, X=H; 4 a : R=2,4,6-Me₃C₆H₂, X=H; 9 : R=2,6-iPr₂C₆H₃, X=tBuMe₂SiO; 10 : R=2,6-iPr₂C₆H₃, X=OH; 13 : R=2,6-iPr₂C₆H₃, X=HCCCH₂O; 22 : R=2,6-iPr₂C₆H₃, X=tBuMe₂SiCH₂O) with different ¹⁹F-fluoride sources was studied, optimized and the experience gained was used in a translational approach to create a straightforward ¹⁸F-labelling protocol for the azasilole derivatives [¹⁸F] 6 and [¹⁸F] 14 . The latter constitutes a potential clickable CycloSiFA prosthetic group which might be used in PET tracer development using Cu-catalysed triazole formation. Based on our findings, CycloSiFA has the potential to become a new entry into non-canonical labelling methodologies for radioactive PET tracer development.     

锂离子电池硅氧化物负极首次库伦效率的影响因素与提升策略

硅氧化物(SiO_x, 0<x≤2)具有高的比容量和低的嵌锂电位, 且体积膨胀率显著低于纯硅负极, 因而被认为是替代传统石墨负极材料的理想选择之一. 然而SiO_x负极在首次嵌锂过程中表面形成的固体电解质界面膜(SEI)以及大量的不可逆产物, 造成其首次库伦效率偏低, 严重阻碍了SiO_x负极的实际应用. 本文从SiO_x的结构模型出发, 系统阐述了SiO_x负极的嵌锂机理以及首次库伦效率低的原因; 归纳了SiO_x负极首次库伦效率的提升策略及其研究进展; 并对提升SiO_x负极首次库伦效率的未来发展方向进行了展望.     

SiO_2微球固相萃取-火焰原子吸收光谱法测定水样中痕量Ag(Ⅰ)

本文通过水热合成法制备了SiO2微球,并研究SiO2微球在弱碱性条件下对Ag(Ⅰ)的吸附性能,建立了SiO2微球固相萃取-火焰原子吸收光谱法(AAS)测定痕量Ag(Ⅰ)的新方法。结果表明:在0.02mol·L-1 NaOH溶液介质中,Ag(Ⅰ)能被定量吸附,且能被2.0mL的12g·L-1硫脲-4%HCl混合液快速定量洗脱。方法的检出限(3σ)为0.59μg·L-1,富集倍数为50。该方法用于水样中痕量Ag(Ⅰ)的测定,加标回收率在95.0%~104.0%范围。     

Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed. The project supported by the National Natural Science Foundation of China (10472126) and the Knowledge Innovation Program of Chinese Academy of Sciences. The English text was polished by Keren Wang     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

Low power Electro-optical filter: Constructed using silicon nanobeam resonator and PIN junction

In this paper, a high tunable Electro-optical filter is designed and simulated with low electric power consumption. A silicon nanobeam resonator based on one-dimensional photonic crystal in the form of Fabry–Perot structure, silicon-on-insulator waveguide, is proposed with a PIN junction. In designing nanobeam resonator, “deterministic design method” is used to achieve the high quality factor and high-transmission rate. Tuning of the resonant wavelength in the output channel of the filter is achieved by manipulating the refractive index of the active area by using the free-carrier dispersion effect. The output wavelengths of designed device can be tuned for the telecom-friendly 1.55 µm range. The device shows a wavelength shift higher than 3 nm for a power consumption of only 0.9 mW. Finally, the simulation results show that the provided device can be considered as a narrowband and tunable Electro-optical filter that is suitable for DWDM communication system.