首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1564篇
  免费   461篇
  国内免费   309篇
化学   912篇
晶体学   91篇
力学   37篇
综合类   9篇
数学   3篇
物理学   1282篇
  2024年   1篇
  2023年   16篇
  2022年   39篇
  2021年   47篇
  2020年   65篇
  2019年   46篇
  2018年   59篇
  2017年   63篇
  2016年   70篇
  2015年   71篇
  2014年   91篇
  2013年   148篇
  2012年   133篇
  2011年   160篇
  2010年   104篇
  2009年   134篇
  2008年   112篇
  2007年   151篇
  2006年   130篇
  2005年   90篇
  2004年   86篇
  2003年   95篇
  2002年   76篇
  2001年   56篇
  2000年   42篇
  1999年   34篇
  1998年   34篇
  1997年   29篇
  1996年   26篇
  1995年   35篇
  1994年   26篇
  1993年   20篇
  1992年   9篇
  1991年   7篇
  1990年   7篇
  1989年   5篇
  1988年   3篇
  1987年   1篇
  1986年   2篇
  1984年   2篇
  1983年   1篇
  1979年   3篇
  1973年   4篇
  1972年   1篇
排序方式: 共有2334条查询结果,搜索用时 15 毫秒
1.
低维硅锗材料是制备纳米电子器件的重要候选材料,是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一,有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布,纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。  相似文献   
2.
《中国物理 B》2021,30(7):78102-078102
The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.  相似文献   
3.
Hong Wang 《中国物理 B》2022,31(9):98104-098104
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.  相似文献   
4.
谢颖  韩磊  张志坤  汪伟  刘兆平 《人工晶体学报》2022,51(11):1903-1910
在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO2/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO2/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO2/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。  相似文献   
5.
CdS/Si heterojunctions have been prepared through growing CdS nanocrystallites (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) by the chemical bath deposition method. Cadmium nanocrystallites (nc-Cd) have been observed and ascribed to the reducibility of Si-NPA. The reason for the appearance of CdO is indistinct and the related work will be done in the future. The blue, green and red emissions are ascribed to the silicon oxide layer, band gap of nc-CdS and the sulphur vacancies, respectively. Redshift and blueshift with the annealing temperature about green emissions are contributed to quantum size effect and the structure transition from nc-Cd to CdO. It is beneficial for investigating the structures and defects to the application of CdS/Si in the optoelectronic field.  相似文献   
6.
《中国物理 B》2021,30(5):56101-056101
The mechanical property and deformation mechanism of twinned gold nanowire with non-uniform distribution of twinned boundaries(TBs) are studied by the molecular dynamics(MD) method. It is found that the twin boundary spacing(TBS) has a great effect on the strength and plasticity of the nanowires with uniform distribution of TBs. And the strength enhances with the decrease of TBS, while its plasticity declines. For the nanowires with non-uniform distribution of TBs, the differences in distribution among different TBSs have little effect on the Young's modulus or strength, and the compromise in strength appears. But the differences have a remarkable effect on the plasticity of twinned gold nanowire. The twinned gold nanowire with higher local symmetry ratio has better plasticity. The initial dislocations always form in the largest TBS and the fracture always appears at or near the twin boundaries adjacent to the smallest TBS. Some simulation results are consistent with the experimental results.  相似文献   
7.
作为马约拉纳费米子的“凝聚态版本”,马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量子计算的理想实验平台.本文综述了高质量半导体纳米线外延生长、半导体/超导体异质结制备以及相应的马约拉纳零能模研究方面的进展,并对半导体/超导体纳米线在量子计算中的应用前景进行了展望.  相似文献   
8.
周海华  宋延林 《化学通报》2021,84(11):1122-1129
银纳米材料因具有导热导电性能好、光电性能优良及抗菌能力强等优点而引起广泛关注,近年来其制备方法得到广泛研究。已报道的制备方法可分为化学法、物理法和生物法等,其中化学还原法可以通过使用不同的还原剂、包裹试剂及助剂,实现不同形貌及粒径的银纳米材料的快速制备。本文综述了化学还原法制备颗粒状、线形、片状、立方体及其它形貌的银纳米材料的原理及应用,并展望了银纳米材料工业化制备及应用研究的发展趋势。可控制备多形貌银纳米材料对于电子行业、医药生物以及传感器等相关领域的发展具有重要意义。  相似文献   
9.
Carbon fiber reinforced Si–C–N matrix composite(C/Si–C–N) with a Si–O–C interlayer (C/Si–O–C/Si–C–N) was fabricated via CVI and PIP process. The flexural behaviors of C/Si–O–C/Si–C–N were investigated using the three-point-bending method and the SEM technique. The results indicated that the flexural strengh of the C/Si–O–C/Si–C–N increases with increasing temperature and the modulus of the composite is essentially unchanged. The strength of C/Si–O–C/Si–C–N is comparable to that of C/PyC/Si–C–N, and the role of Si–O–C interlayer in C/Si–C–N can rival that of the PyC interlayer. The weaker interfacial bonding and the larger thickness of Si–O–C interlayer make a contribution to this at RT while the thinner interlayer and unstable structure of Si–O–C interphase do it above 1300 °C.  相似文献   
10.
Several silica‐based solutions with 50 g/l of SiO2 were prepared from sodium silicate solutions and silica sol; the silicate conversion coatings were obtained by immersing hot‐dip galvanized steel sheets in these solutions. These solutions were characterized using high‐resolution transmission electron microscopy and 29Si nuclear magnetic resonance; the morphology of the coatings was observed by SEM and atomic force microscopy while the corrosion resistance was evaluated by electrochemical measurements as well as neutral salt spray tests. The results show that the coatings obtained from the single silica sol solution had poor adhesion and the coating obtained from the sodium silicate solution with low SiO2/Na2O molar ratio was uneven. By adding the silica sol to the silicate solution with low molar ratio, uniform coatings with better protection property were obtained. According to the results of 29Si nuclear magnetic resonance spectra, the effects of the distribution of silicate anions with various polymerization degrees in the silica‐based solutions on the microstructure and corrosion resistance of the silicate coatings are discussed. Copyright © 2016 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号