In-situ electrochemical study of chalcopyrite pressure oxidation leaching from 110 °C to 150 °C under saturated vapor pressure

Pressure oxidation leaching behavior of chalcopyrite in sulfuric acid solution from 110 °C to 150 °C were investigated by in-situ electrochemical methods. Leaching experiments under saturated vapor pressure conditions were used to simulate the anoxic environment that may be encountered in industrial applications. Scanning electron microscope and X-ray photoelectron spectroscopy were used to characterize the morphology and the chemical status of chalcopyrite surface. Results show that the copper extraction was increased with the increase of leaching temperature. Under the optimal leaching conditions under saturated vapor pressure, the copper and iron extraction are 8.3% and 29.8%, respectively. When the temperature increased from 110 °C to 150 °C, the self-corrosion potential and electrochemical reaction resistance firstly increased and then decreased. In contrast, the resistance of the passive film was always increased with the increase of temperature. The electrochemical study results indicated that the increase in temperature affected the oxidation of chalcopyrite by altering the kinetics of the cathodic reaction and the anodic passivation. Both the self-corrosion current density (i_corr) and rate constant were affected by the reduction of Fe(III). The XPS results show that elemental sulfur and H₃O(Fe₃(SO₄)₂(OH)₆) were the main leaching solid products. The formation of H₃O(Fe₃(SO₄)₂(OH)₆) not only caused a decrease in cathodic reaction kinetics, but also increased the resistance of mass transfer process. Due to the faster release of iron, copper-rich sulphides were formed, which mixed with the elemental sulfur and/or H₃O(Fe₃(SO₄)₂(OH)₆) led to coverage of the chalcopyrite surface.     

Inhibiting Ion Migration Through Chemical Polymerization and Chemical Chelation Toward Stable Perovskite Solar Cells

The migration of ions is known to be associated with various detrimental phenomena, including current density-voltage hysteresis, phase segregation, etc., which significantly limit the stability and performance of perovskite solar cells, impeding their progress toward commercial applications. To address these challenges, we propose incorporating a polymerizable organic small molecule monomer, N-carbamoyl-2-propan-2-ylpent-4-enamide (Apronal), into the perovskite film to form a crosslinked polymer (P-Apronal) through thermal crosslinking. The carbonyl and amino groups in Apronal effectively interact with shallow defects, such as uncoordinated Pb²⁺ and iodide vacancies, leading to the formation of high-quality films with enhanced crystallinity and reduced lattice strain. Furthermore, the introduction of P-Apronal improves energy level alignment, and facilitates charge carrier extraction and transport, resulting in a champion efficiency of 25.09 %. Importantly, P-Apronal can effectively suppress the migration of I⁻ ions and improve the long-term stability of the devices. The present strategy sets forth a path to attain long-term stability and enhanced efficiency in perovskite solar cells.     

Effects of hydroxyl groups and hydrogen passivation on the structure,electrical and optical properties of silicon carbide nanowires

The effects of hydrogen and hydroxyl passivation on the structure, electrical and optical properties of SiCNWs were investigated. The passivation performance of different atoms (groups) were discussed by analyzing the distribution of electronic states and the polarity of chemical bonds. The results show that passivation can improve the stability of SiCNWs structure, and the effect of hydroxyl is better than hydrogen passivation. And hydrogen and hydroxyl passivation both increase the band gap of SiCNWs, and the changing trend of band gap is relevant to the polarity of the covalent bond formed by the passivation of surface atoms. Moreover, passivation enhances the stability of the optical properties of SiCNWs, resulting in narrowing of light absorption, photoconductivity and other spectra, and the response peak shifts to the deep ultraviolet region, which means that hydrogen or hydroxyl passivation of SiCNWs is likely to be a candidate material for deep ultraviolet micro-nano optoelectronic devices.     

The low frequency behaviour in high frequency capacitance–voltage characteristics due to contribution of band-to-band tunnelling and generation–recombination in Hg0.75Cd0.25Te MIS capacitors

Hg_1−xCd_xTe Metal–Insulator–Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation–recombination (gr) of carriers to inversion layer capacitance. A good fit to the data has been obtained by including the btb contributions rather than gr contributions.     

Corrosion and passivation behavior of Mg-Zn-Y-Al alloys prepared by cooling rate-controlled solidification

Highly corrosion-resistant nanocrystalline Mg-Zn-Y-Al multi-phase alloys have been prepared by consolidation of rapidly solidified (RS) ribbons. The relation between corrosion behavior and microstructure evolution of Mg-Zn-Y-Al alloys with a long period stacking ordered phase has been investigated. In order to clarify the influence of rapid solidification on the occurrence of localized corrosion such as filiform corrosion, several Mg_96.75Zn_0.75Y₂Al_0.5 (at.%) alloys with different cooling rates are fabricated by the gravity casting, copper mould injection casting and melt-spinning techniques and their corrosion behavior and microstructures are examined by the salt water immersion test, electrochemical measurements, GDOES, XRD, SEM and TEM. To clarify the effect of aluminium addition on the improvement in corrosion resistance of the alloys, several Mg_97.25−xZn_0.75Y₂Al_x alloys with different aluminium contents are fabricated by consolidating RS ribbons and the formation of corroded films on the Mg-Zn-Y-Al alloys have been investigated. Rapid solidification brings about the grain refinement and an increase in the solid solubility of zinc, yttrium and aluminium into the magnesium matrix, enhancing microstructural and electrochemical homogeneity, which in turn enhanced corrosion resistance. The addition of aluminium to magnesium can modify the structure and chemical composition of surface films and improves the resistance to local breakdown of the films.     

酸性AlCl3-BMIC离子液体中的铝阳极溶解

采用线性扫描伏安法研究了Lewis 酸性AlCl₃-BMIC (BMIC: 1-butyl-3-methylimidazolium chloride)离子液体中铝电极的溶解. 铝电极在阳极极化时出现了钝化现象, 钝化是由于在铝电极表面形成了固体AlCl₃钝化膜造成的. 铝的电化学溶解过程可以依次分为三个区: 电化学控制区、过渡区和钝化区. 在电化学控制区, 铝的电化学溶解速率随着电位的正移而逐渐增加; 在过渡区, 由于电极表面AlCl₄^-和Al₂Cl₇^-浓度发生改变而析出固体AlCl₃使得铝电化学溶解速率随着电位的正移而逐渐减小; 当钝化膜形成之后, 铝的电化学溶解速率不再随着电位的正移而发生改变, 铝溶解进入钝化区. 增加搅拌、升高温度、降低离子液体AlCl₃摩尔分数都可以增加铝溶解阳极极限电流密度.     

Electrical and optical characteristics of porous silicon impregnated with LaF3 by a novel chemical bath technique

The structural, electrical and optical characteristics of porous silicon (PS) due to the impregnation of LaF₃ into PS by a novel chemical-bath deposition (CBD) technique have been investigated in this article. Without removing the PS from the anodization chamber the impregnation with LaF₃ has been done by reacting LaCl₃ with HF in the same chamber at room temperature. The impregnation of LaF₃ was confirmed by the SEM on the cross-section of the LaF₃/PS/Si system and EDX. The modification of PS surface by LaF₃ had direct influence on the electrical and optical properties of PS. Electrical properties of Ag/LaF₃/PS/p-Si/Ag structures were studied through the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Formation of metal-insulator-semiconductor (MIS) diode was evident whose forward current increased with annealing. A diode factor of about 2.4 has been obtained for the annealed heterostructure indicating a high density of trap states. The C⁻²-V curves of all samples showed negative flat band voltage of around −2 V confirming a large number of fixed positive charges in the LaF₃. The photoluminescence (PL) intensity of the LaF₃-impregnated PS showed aging for the as-deposited samples, but when annealed PS structure recovered the PL intensity. Experimental results show that the optimized chemical bath passivation process for the LaF₃ on porous silicon could enable the porous silicon to be an important material for photonic application.     

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

The Kelvin method together with the simulations of surface photovoltage has been used to determine the surface electronic properties, i.e. the surface band bending (qV_S), surface state density (N_SS0) and surface fixed charge (Q_Fx) of S₂Cl₂-treated GaAs (100) surfaces. The measured values of surface photovoltage (SPV) do not show saturation at high photon flux densities in contradiction to the simple theory of SPV. This behavior of SPV agrees very well with the rigorous computer simulations and can be explained in terms of the Dember effect. Moreover, the SPV values become insensitive to surface states at moderate photon flux densities. On this basis, the surface band bending of untreated (0.79 eV) and S₂Cl₂-treated (0.60 eV) GaAs surfaces was determined. The band diagrams summarizing the obtained results proved the influence on the potential variations not only from the ionized surface states and surface fixed charge but also from the surface dipole layer on the S₂Cl₂-treated GaAs surface. The dipole arises most probably due to the S-Ga bonding on the surface. The presented results offer an alternative explanation for increased PL commonly observed after the sulfidation in the absence of substantial reduction in the band bending.     

Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl_x. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.     

Sulphide passivation of GaN based Schottky diodes

Wet chemical passivation of n-GaN surface was carried out by dipping GaN samples in ammonium sulphide diluted in aqueous and alcoholic solvent base solutions. Photoluminescence (PL) investigations indicated that sulphide solution effectively led to the reduction of GaN surface states. Increased band edge PL peak showed that S²⁻ ions are more active in alcohol based solvents. X-ray photoelectron spectroscopy revealed reduction in surface oxides by introduction of sulphide species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated surfaces. Remarkable improvement in the Schottky barrier height (0.98 eV for passivated diodes as compared to 0.75 eV for untreated diodes) has been observed.