Fabrication of red-emitting CaAlSiN3: Eu2+ through phosphor-in-glass approach for application in rear combination lamp

In this study, the red-emitting phosphor-in-glass (PiG) using the CaAlSiN₃: Eu²⁺ (CASN) phosphor is reported for the first time. The CASN: Eu²⁺ PiG samples with a maximum luminous flux of 25.1–29.4 for l minute at laser power of 1 W/mm² was obtained using a low-temperature glass frit and GPS furnace. Despite the increase in the phosphor from 15 to 25 wt%, the PiG produced at low temperature of 380 °C showed robust properties. Finally, the red PiG module designed for rear lamp applications maintains over 90% lumens for a minute at 350 mA and achieves an intense red light having a color temperature of 4589 K.     

Low Ruthenium Content Confined on Boron Carbon Nitride as an Efficient and Stable Electrocatalyst for Acidic Oxygen Evolution Reaction

To date, only a few noble metal oxides exhibit the required efficiency and stability as oxygen evolution reaction (OER) catalysts under the acidic, high-voltage conditions that exist during proton exchange membrane water electrolysis (PEMWE). The high cost and scarcity of these catalysts hinder the large-scale application of PEMWE. Here, we report a novel OER electrocatalyst for OER comprised of uniformly dispersed Ru clusters confined on boron carbon nitride (BCN) support. Compared to RuO₂, our BCN-supported catalyst shows enhanced charge transfer. It displays a low overpotential of 164 mV at a current density of 10 mA cm⁻², suggesting its excellent OER catalytic activity. This catalyst was able to operate continuously for over 12 h under acidic conditions, whereas RuO₂ without any support fails in 1 h. Density functional theory (DFT) calculations confirm that the interaction between the N on BCN support and Ru clusters changes the adsorption capacity and reduces the OER energy barrier, which increases the electrocatalytic activity of Ru.     

Transition‐Metal Nitride Core@Noble‐Metal Shell Nanoparticles as Highly CO Tolerant Catalysts

Core–shell architectures offer an effective way to tune and enhance the properties of noble‐metal catalysts. Herein, we demonstrate the synthesis of Pt shell on titanium tungsten nitride core nanoparticles (Pt/TiWN) by high temperature ammonia nitridation of a parent core–shell carbide material (Pt/TiWC). X‐ray photoelectron spectroscopy revealed significant core‐level shifts for Pt shells supported on TiWN cores, corresponding to increased stabilization of the Pt valence d‐states. The modulation of the electronic structure of the Pt shell by the nitride core translated into enhanced CO tolerance during hydrogen electrooxidation in the presence of CO. The ability to control shell coverage and vary the heterometallic composition of the shell and nitride core opens up attractive opportunities to synthesize a broad range of new materials with tunable catalytic properties.     

Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor

The properties of Al_xGa_1−xN/GaN high electron mobility transistor (HEMT) impacted by pressure are characterized quantitatively. The results indicate that the dislocation density increases as the critical thickness decreases with increasing pressure. The two-dimensional electron gas density was found to be linearly changeable with the pressure. A simulation has been completed to verify the influence of electron mobility. The results show that the misfit dislocation scattering induced by the pressure is a major limiting factor for the properties of HEMT.     

Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size ∼1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.     

Silver delafossite nitride, AgTaN2?

A new silver nitride, AgTaN₂, was synthesized from NaTaN₂ by a cation-exchange reaction, using a AgNO₃-NH₄NO₃ flux at 175 °C. Its crystal structure type is delafossite (R3¯m) with hexagonal lattice parameters of a=3.141(3) Å, c=18.81(2) Å, in which silver is linearly coordinated to nitrogen. Energy dispersive X-ray analysis and combustion nitrogen/oxygen analysis gave a composition with atomic ratios of Ag:Ta:N:O as 1.0:1.2(1):2.1(1):0.77(4), which is somewhat Ta rich and indicates some oxide formation. The X-ray photoelectron spectroscopy analysis showed a Ta- and O-rich surface and transmission electron microscope observation exhibited aggregates of ca. 4-5 nm-sized particles on the surface, which are probably related to the composition deviation from a AgTaN₂. The lattice parameters of stoichiometric AgTaN₂ calculated by density functional theory agree with the experimental ones, but the possibility of some oxygen incorporation and/or silver deficiency is not precluded.     

Decomposition of molybdate–hexamethylenetetramine complex: One single source route for different catalytic materials

Decomposition of ammonium heptamolybdate–hexamethylentetramine (HMTA) complex (HMTA)₂(NH₄)₄Mo₇O₂₄·2H₂O was studied as a function of treatment conditions in the range 300–1173 K. The evolution of solid products during decomposition was studied by thermal analysis and in situ EXAFS. Depending on the nature of the gas used for treatment, single phases of highly dispersed nitrides Mo₂N, carbide Mo₂C, or oxide MoO₂ can be obtained. The nature of the products obtained was explained by qualitative thermodynamical considerations. Morphology of the solids considerably depends on such preparation parameters as temperature and mass velocity of the gas flow. For the nitride-based materials, catalytic activity was evaluated in the model thiophene HDS reaction. It was demonstrated that NH₃-treated samples showed better catalytic activity than N₂-treated ones due to cleaner surface and better morphology. Transmission microscopy, XRD and XPS studies showed that MoS₂ is formed on the surface during HDS reaction or sulfidation with H₂S. Optimized nitride-derived catalysts showed mass activity several times higher than unsupported MoS₂ or MoS₂/Al₂O₃ reference catalyst.     

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.     

Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.