机械磨抛对CdZnTe薄膜阻变特性的影响

采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。     

一种通过梯形PPMgLN波导倍频实现带宽可调谐光源的理论研究

本文设计了一种梯形的周期极化掺镁铌酸锂(PPMgLN)波导,并通过在传播方向上引入温度梯度来拓宽其倍频(SHG)过程的泵浦光源可接收带宽。通过有限差分的光束传输法,计算波导的有效折射率,并进行波导尺寸的设计。结果表明,通过改变梯形波导不同位置的温度,使其形成一个温度梯度,可拓宽泵浦光源的波长可接收带宽。本文所设计的PPMgLN波导最大泵浦光源可接收带宽为C波段,即1 530~1 565 nm,该波导可倍频C波段,得到输出波段带宽为765~782.5 nm,温度调谐范围为30~150 ℃。     

以磷化铁为添加剂沿(111)面生长磷掺杂金刚石大单晶

掺杂是调控金刚石性能的一种重要手段。本文采用温度梯度法,在5.6 GPa、1 312 ℃的条件下,选用Fe₃P作为磷源进行磷掺杂金刚石大单晶的合成。金刚石样品的显微光学照片表明,随着Fe₃P添加比例的增加,金刚石晶体的颜色逐渐变深,包裹体数量逐渐增加,晶形由板状转变为塔状直至骸晶。金刚石晶形的变化表明Fe₃P的添加使生长金刚石的V形区向右偏移,这是Fe₃P改变触媒特性的缘故。红外光谱分析表明,Fe₃P的添加使金刚石晶体中氮含量上升,这说明磷的进入诱使氮原子更容易进入金刚石晶格中。激光拉曼光谱测试表明,随着Fe₃P添加比例的增加,所合成的掺磷金刚石的拉曼峰位变化不大,其半峰全宽(FWHM)值变大,这说明磷的进入使得金刚石晶格畸变增加。XPS测试结果显示,随着Fe₃P添加比例的增加,金刚石晶体中磷相对碳的原子百分含量也会增加,这意味着添加Fe₃P所合成的金刚石晶体中有磷存在。     

雾化辅助化学气相沉积法氧化镓薄膜生长研究

采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。     

光纤基底TiNi形状记忆合金薄膜制备工艺

将TiNi基记忆合金薄膜与光纤相结合可制成智能化、集成化且成本经济的微机电系统和微传感器件.本文采用磁控溅射法在二氧化硅光纤基底上制备TiNi记忆合金薄膜,系统讨论了溅射工艺参数以及后续退火处理对薄膜质量的影响.采用自研制光纤镀膜掩膜装置在直径为125μm的光纤圆周表面上形成均匀薄膜.实验表明:在靶基距、背底真空度、Ar气流量和溅射时间一定的条件下,溅射功率存在最佳值;溅射压强较大时,薄膜沉积速率较低,但薄膜表面粗糙度较小.进行退火处理后,薄膜形成较良好的晶体结构,Ti_49.09Ni_50.91薄膜中马氏体B19′相和奥氏体B2相共存,但以B19′为主.根据本文研究结果,在玻璃光纤基底上制备高质量的TiNi基记忆合金薄膜是可实现的,本工作为下一步研制微机电系统和微型传感器做了基础准备.     

Diffusion Model of a Non-Integer Order PIγ Controller with TCP/UDP Streams

In this article, a way to employ the diffusion approximation to model interplay between TCP and UDP flows is presented. In order to control traffic congestion, an environment of IP routers applying AQM (Active Queue Management) algorithms has been introduced. Furthermore, the impact of the fractional controller PIγ and its parameters on the transport protocols is investigated. The controller has been elaborated in accordance with the control theory. The TCP and UDP flows are transmitted simultaneously and are mutually independent. Only the TCP is controlled by the AQM algorithm. Our diffusion model allows a single TCP or UDP flow to start or end at any time, which distinguishes it from those previously described in the literature.     

Negative thermal expansion in NbF_3 and NbOF_2:A comparative theoretical study

Thermal expansion control is always an obstructive factor and challenging in high precision engineering field. Here,the negative thermal expansion of Nb F_3 and Nb OF_2 was predicted by first-principles calculation with density functional theory and the quasi-harmonic approximation(QHA). We studied the total charge density, thermal vibration, and lattice dynamic to investigate the thermal expansion mechanism. We found that the presence of O induced the relatively strong covalent bond in Nb OF_2, thus weakening the transverse vibration of F and O in Nb OF_2, compared with the case of Nb F_3.In this study, we proposed a way to tailor negative thermal expansion of metal fluorides by introducing the oxygen atoms.The present work not only predicts two NTE compounds, but also provides an insight on thermal expansion control by designing chemical bond type.     

不同退火条件对PEALD制备的Ga2O3薄膜特性的影响

利用等离子增强原子层沉积技术(PEALD)在c面蓝宝石衬底上制备了氧化镓(Ga₂O₃)薄膜,研究了退火气氛(v(N₂)∶v(O₂)=1∶1(体积比)、空气和N₂)及退火时间对Ga₂O₃薄膜晶体结构、表面形貌和光学性质的影响。研究结果表明,退火前的氧化镓处于亚稳态,不同退火气氛下退火后晶体结构发生明显改变,而且退火气氛中N₂比例增加有利于Ga₂O₃重结晶。在N₂气氛下退火达到30 min,薄膜结构已由亚稳态转变成择优取向的β-Ga₂O₃。而且表面形貌分析表明,退火30 min后表面形貌开始趋于稳定,表面晶粒密度不再增加。另外实验样品在 400~800 nm的平均透射率几乎是100%,且光吸收边陡峭。采用N₂气氛退火,对于富氧环境下沉积的Ga₂O₃更利于薄膜表面原子迁移,以及择优取向Ga₂O₃重结晶。     

Analysis on First-stage Ignition of n-Heptane at Low Temperatures with a Lumped Skeletal Mechanism

Two-stage ignition exists in the low-temperature combustion process of n-heptane and the first-stage ignition also shows a negative temperature coefficient(NTC) phenomenon. To study key reactions and understand chemical principles affecting the first-stage ignition of n-heptane, a lumped skeletal mechanism with 62 species is obtained based on the detailed NUIGMech1.0 mechanism using the directed relation graph method assisted by sensitivity analysis and isomer lumping. The lumped mechanism shows good performance on ignition delay time under wide conditions. The study revealed that the temperature after the first-stage ignition is higher and a larger amount of fuel is consumed at lower initial temperatures. The temperature at the first-stage ignition is relatively insensitive to the initial temperature. Further sensitivity analysis and reaction path analysis carried out based on the lumped mechanism show that the decomposition of RO₂ to produce alkene and HO₂is the most important reaction to inhibit the first-stage ignitions. The chain branching explosion closely related to the first-stage ignition will be terminated when the rate constant for the RO₂ decomposition is larger than that of the isomerization of RO₂ to produce QOOH. The NTC behavior as well as other characteristics of the first-stage ignition can be rationalized from the competition between these two reactions.     

金刚石衬底上GaN HEMT沟道温度建模:各向异性且非均匀热导率的影响

为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。