The low temperature thermal properties of potassium tantalate niobate crystal

The thermal properties of KTN crystal were investigated at low temperatures by DSC and TM. The phase transition enthalpies and the average specific heats of the crystal were measured. Results are analyzed and discussed.     

透明KTN薄膜的PLD法制备及其铁电性能研究

用Sol Gel法制备KTN多晶粉末,在富氧气氛下烧结富钾KTN陶瓷,代替KTN单晶作为靶材,用PLD技术结合后期退火技术,在透明石英单晶(100)上制备出高取向的透明KTN薄膜,对薄膜厚度、折射率、伏～安(I～V)特性、介电特性进行了测试与分析.I～V特性表明,低电场强度下,I～V服从欧姆定律,高电场强度下,I～V服从平方关系,可用空间电荷限制电流模型解释.电容～测试电场频率(C～F)特性表明,低频电容色散大,高频色散小,10kHz时介电常数为12600.     

Fe：KTN晶体的二波耦合特性研究

首次报道四方相FeiKTN晶体的二波耦合性质.测得晶体的二波耦合增益系数和衍射效率分别为7.3cm~(-1)和42％,响应时间为2.8sec.文中还分析了主要载流子的符号并计算了其它参数.     

Phase matched scanning optical parametric chirped pulse amplification based on pump beam deflection

Combined with the optical beam deflection, a novel approach of phase matched broadband scanning optical parametric chirped pulse amplification(OPCPA) was proposed. For this scheme, there was no superfluous operations to the chirped signal pulse which propagated in a changeless direction straightforward, but the pump beam were deflected in space with time by passing through a KTN crystal, which was applied with varied driving voltage. The theories of phase matching of each chirped signal frequency based on pump beam deflection was analyzed detailedly. And the type-I amplification of chirped signal with 800 nm central wavelength and 20 nm bandwidth pumped by 532 nm in BBO crystal was simulated as a case in point. The simulation results showed that the spectral distribution of chirped signal pulse was almost the same as the initial form, i.e., there was nearly no narrowing on the amplified spectrum by using of the scanning OPCPA based on pump beam deflection. In addition, the simulations demonstrated that it was worth minimizing the voltage deviation applied to KTN crystal as much as possible for the sake of better waveform, larger bandwidth and higher conversion efficiency of amplified signal pulse in the proposed scanning OPCPA.     

KTN晶体及其熔体结构的高温拉曼光谱研究

测量并研究了不同温度(室温—1573 K)范围内KTN晶体的拉曼光谱及其熔体的高温拉曼光谱,分析了KTN晶体结构随温度变化的规律及其熔体的结构特征.随着温度的升高,KTN晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,同时存在不同程度的展宽,并伴随强度的减弱.观察并解释了温度353 K附近KTN晶体样品的四方—立方转相现象.研究了KTN晶体拉曼光谱中538cm^-1,585cm^-1,835cm^-1和877cm^-1谱峰及其 关键词： 高温拉曼光谱 熔体 KTN晶体     

KTN薄膜脉冲激光沉积过程的机理研究

根据能量平衡原理,导出了脉冲激光作用靶材的烧蚀率公式,并根据流体动力学理论,得出了脉冲激光产生的等离子体的空间运动特性方程,将靶材烧蚀率公式与等离子体空间动力学方程结合起来,根据实验研究了不同激光功率密度和波长对Kta_0.65Nb_0.35O₃(KTN)薄膜沉积特性的影响,得到了一些有价值的结果,并对结果进行了详细的讨论,理论计算结果与实验大体符合. 关键词： PLD技术 烧蚀率 等离子体 KTN薄膜     

Structures and elastic properties of paraelectric and ferroelectric KTa0.5Nb0.5O3 from first-principles calculation

The structures, elastic properties and intrinsic hardness of B-O bonds of KTa_0.5Nb_0.5O₃ crystal in paraelectric and ferroelectric phase structures have been investigated by means of the density functional theory. Both structures are found to be elastically stable and in good agreement with available results. The elastic properties including the bulk modulus, shear modulus and Young’s modulus change largely during phase transition. The paraelectric KTa_0.5Nb_0.5O₃ crystal is more incompressible and harder than ferroelectric phase. The hardness of KTa_0.5Nb_0.5O₃ crystal is mostly determined by Nb-O bonds and the modifications of the bond strength affect the hardness of the crystal. Charge density contours indicate that the electronic distributions between B-O bonds play an important role in the formation of elastic properties.     

Mg diffusion in K(Ta0.65Nb0.35)O3 thin films grown on MgO evidenced by Auger electron spectroscopy investigation

The diffusion of Mg in pulsed laser deposited K(Ta_0.65Nb_0.35)O₃ thin films epitaxially grown on (1 0 0) MgO single crystal substrate were investigated by Auger electron spectroscopy (AES). A diffusion of Mg from the substrate into the whole thickness (400 nm) of the as-deposited K(Ta_0.65Nb_0.35)O₃ films was observed with an accumulation of Mg at the surface. Ex situ post-annealing (750 °C/2 h) has led to a homogeneous distribution of Mg in all the ferroelectric coating. This strong reaction between film and substrate promotes a doping effect, responsible for the reduction of K(Ta_0.65Nb_0.35)O₃ dielectric losses in comparison with films grown on other substrates.     

KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz(100)

Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). Since the thermal stress sustained by the quartz is relatively small, the limit temperature of the quartz substrates (300℃) is much lower than that of the P-Si substrates (560℃); the prepared thin film is at amorphous state. Increasing the pulsed laser energy density in the process incorporated with annealing the film after deposition at different temperatures converts the amorphous films into crystal. The optimal pulsed laser energy density and annealing temperature were 2.0 J/cm2 and 600℃, respectively. A discussion was made to understand the mechanism of film production at relatively low substrate temperature by PLD and effects of the annealing temperatures on the forming of the perovskite p