Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.     

High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry

Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In₂Se₃ vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W⁻¹), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In₂Se₃, graphene/MoS₂ and graphene/MoSe₂ vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.     

Constructing 2D Sandwich-like MOF/MXene Heterostructures for Durable and Fast Aqueous Zinc-Ion Batteries

Two-dimensional metal–organic frameworks (2D MOFs) can be used as the cathodes for high-performance zinc-ion battery due to their large one-dimensional channels. However, the conventionally poor electrical conductivity and low structural stability hinder their advances. Herein, we report an alternately stacked MOF/MX heterostructure, exhibiting the 2D sandwich-like structure with abundant active sites, improved electrical conductivity and exceptional structural stability. Ex situ characterizations and theoretical calculations reveal a reversible intercalation mechanism of zinc ions and high electrical conductivity in the 2D heterostructure. Electrochemical tests confirm excellent Zn²⁺ migration kinetics and ideal pseudocapacitive behaviors. As a consequence, Cu-HHTP/MX shows a superior rate performance (260.1 mAh g⁻¹ at 0.1 A g⁻¹ and 173.1 mAh g⁻¹ at 4 A g⁻¹) and long-term cycling stability of 92.5 % capacity retention over 1000 cycles at 4 A g⁻¹.     

Boosting Charge Transport in a 2D/3D Perovskite Heterostructure by Selecting an Ordered 2D Perovskite as the Passivator

We demonstrate that an ordered 2D perovskite can significantly boost the photoelectric performance of 2D/3D perovskite heterostructures. Using selective fluorination of phenyl-ethyl ammonium (PEA) lead iodide to passivate 3D FA_0.8Cs_0.2PbI₃, we find that the 2D/3D perovskite heterostructures passivated by a higher ordered 2D perovskite have lower Urbach energy, yielding a remarkable increase in photoluminescence (PL) intensity, PL lifetime, charge-carrier mobilities (ϕμ), and carrier diffusion length (L_D) for a certain 2D perovskite content. High performance with an ultralong PL lifetime of ≈1.3 μs, high ϕμ of ≈18.56 cm² V⁻¹ s⁻¹, and long L_D of ≈7.85 μm is achieved in the 2D/3D films when passivated by 16.67 % para-fluoro-PEA₂PbI₄. This carrier diffusion length is comparable to that of some perovskite single crystals (>5 μm). These findings provide key missing information on how the organic cations of 2D perovskites influence the performance of 2D/3D perovskite heterostructures.     

Advances in two-dimensional heterostructures by mono-element intercalation underneath epitaxial graphene

Two-dimensional (2D) materials have displayed many remarkable physical properties, including 2D superconductivity, magnetism, and layer-dependent bandgaps. However, it is difficult for a single 2D material to meet complex practical requirements. Heterostructures obtained by vertically stacking different kinds of 2D materials have extensively attracted researchers’ attention because of their rich electronic features. With heterostructures, the constraints of lattice matching can be overcome. Meanwhile, high application potential has been explored for electronic and optoelectronic devices, including tunneling transistors, flexible electronics, and photodetectors. Specifically, graphene-based van der Waals heterostructures (vdWHs) by intercalation are emerging to realize various functional heterostructures-based electronic devices. Intercalating atoms under epitaxial graphene can efficiently decouple graphene from the substrate, and is expected to realize rich novel electronic properties in graphene. In this study, we systematically review the progress of the mono-element intercalation in graphene-based vdWHs, including the intercalation mechanism, intercalation-modified electronic properties, and the practical applications of 2D intercalated heterostructures. This work would inspire edge-cutting ideas in the scientific frontiers of 2D materials.     

Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields

The interband and intraband radiation from the n-InGaAs/GaAs heterostructures with the double and triple tunnel coupled and selectively doped quantum wells (QWs), which is appeared under the lateral electric field and in the presence of hole injection from the anode contact, has been investigated. A steep increase of the interband radiation intensity was found at the fields of E≥1.7 kV/cm. This effect should be related to the big lifetime of the injected charge carriers (~10⁻⁶ s) which exceeds by three orders of magnitude the lifetime in the similar bulk direct-band semiconductor. Its reason lies in spatial separation of the injected holes and electrons between coupled wells, firstly, by the built-in transverse electric field between wells and, secondly, due to the real-space transfer of carriers heated by the lateral electric field from the wide well to the narrow δ-doped one. Furthermore, an increase of the carrier concentration due to injection leads to an increase of that transition intensity and, consequently, to an intensity increase of the radiative intersubband transitions of carriers in QWs which results in a steep intensity increase of the far (50–120 µm) infrared radiation.     

Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe₂ and TiTe₂, a Mott-insulating state in monolayer 1T-TaSe₂, and the monolayer specific 2D topological insulator 1T′-WTe₂, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe₂, the 2D topological insulators of 1T′-MoTe₂, and the CDW material 1T-VTe₂. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.     

Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

The Raman spectra of the optical confined phonons in the GaAs/AlAs ultra-thin layer superlattices grown with different growth conditions were used to determine the compositional profiles and to study the process of segregation at the heterointerfaces. A modified kinetic model was developed in order to calculate the compositional profiles in the samples under investigation. The comparison between the experimentally obtained compositional profiles and those calculated by the kinetic model allowed us to determine the parameters characterizing the segregation. It was shown that the increase of pressure of As acts equivalently to the decrease of the growth temperature, resulting in a more abrupt compositional profile.     

Radiation resistance of GaAs–AlGaAs heterostructures doped with isovalent and rare-earth elements

When GaAs–Si and GaAs–AlGaAs heterostructures are exposed to γ-quanta, radiation stimulated ordering is observed. However, the gettering efficiency in such systems falls for layer widths more than 1 μm. For this reason we seek effective methods of radiation resistance improvement of materials in which one would expect point radiation defects to be gettered not only at defect boundaries, but also in the active layer volume.

S.i.GaAs–s.i.Al_xGa_1−xAs–nGaAs : Te heterostructures are presented with epitaxial layers (doped with Yb or undoped), obtained by means of LPE (liquid-phase epitaxy). The electron concentration in nGaAs was found to be (1–3)×10¹⁸ cm⁻³ for widths 1–3 μm. The samples were exposed to ⁶⁰Co γ-quanta with doses of 10⁵–10⁷ rad.

Investigations of irradiated samples by means of low-temperature (4.2 K) photoluminescence have shown considerable decrease of exciton halfwidth in the boundary spectra of nGaAs : Te : Yb epitaxial layers in comparison with nGaAs : Te layer spectra. This is caused by background impurity gettering which happens on the s.i.Al_xGa_1−xAs–nGaAs heteroboundaries as well as in deformed regions in the epitaxial layer volume. Formation of such regions is caused by the difference between the covalent radii of Yb atoms and GaAs lattice atoms. The maximum effect of radiation stimulated gettering of dopants in nGaAs epitaxial layers is observed for Yb concentrations which are equal to 10⁻⁴–10⁻⁵ atomic fractions in a solution-melt.

It is determined that the deformed regions in epitaxial layer volumes and heteroboundaries could be efficient drains for point radiation defects which form under radiation exposure. The investigations carried out showed that the doping of an epitaxial layers by rare-earth impurities provides considerable improvement in forming radiation resistant III–V materials.     

Active role of buried ultrathin oxide layers in adsorption of O2 on Au films

Ultrathin oxide layers can exhibit special behavior by enabling the coupling of structural distortions and charge transfer beyond that allowed in the bulk. In this work, we show from first-principles calculations that ultrathin layers of titania, a prototypical oxide, are active in stabilizing adsorption of O₂ on Au overlayers. The adsorbed O₂ molecules induce charge redistribution in Au that penetrates to the Au-titania interface, which responds through structural distortions that lower the total energy of the system. We suggest that this effect may be of more general nature and useful in catalysis.