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1.
Ti2O3 thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti2O3 thin films, the insulator-metal transition is observed at ∼80 K, with nearly 3–4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature. 相似文献
2.
二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti2N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti2N-Sc、Ti2N-Zr体系磁矩增大;此外,Ti2N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。 相似文献
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Based on our analysis of the contributions from the connected and disconnected contraction diagrams to the pion-kaon scattering amplitude, we provide the first determination of the only free low-energy constant at ${ \mathcal O }({p}^{4})$, known as ${L}_{0}^{r}$, in SU (4∣1) Partially-Quenched Chiral Perturbation theory using the data from the Extended Twisted Mass collaboration, ${L}_{0}^{r}(\mu ={M}_{\rho })=0.77(20)(25)(7)(7)(2)\cdot {10}^{-3}$. The theory uncertainties originate from the unphysical scattering length, the physical low-energy constants, the higher-order chiral corrections, the (lattice) meson masses and the pion decay constant, respectively. 相似文献
5.
Luminescent characteristics of Tm3+/Tb3+/Eu3+ tri-doped Na5Y9F32 single crystals for white emission with high thermal stability 下载免费PDF全文
Lizhi Fang 《中国物理 B》2022,31(12):127802-127802
By using an improved Bridgman method, 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/y$ mol% Eu$^{3+}$ ($y = 0$, 0.4, 0.6, 0.8) doped Na$_{5}$Y$_{9}$F$_{32}$ single crystals were prepared. The x-ray diffraction, excitation spectra, emission spectra and fluorescence decay curves were used to explore the crystal structure and optical performance of the obtained samples. When excited by 362 nm light, the cool white emission was realized by Na$_{5}$Y$_{9}$F$_{32}$ single crystal triply-doped with 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/0.8$ mol% Eu$^{3+}$, in which the Commission Internationale de l'Eclairage (CIE) chromaticity coordinate was (0.2995, 0.3298) and the correlated color temperature (CCT) was 6586 K. The integrated normalized emission intensity of the tri-doped single crystal at 448 K could keep 62% of that at 298 K. The internal quantum yield (QY) was calculated to be $\sim 15.16$% by integrating spheres. These results suggested that the single crystals tri-doped with Tm$^{3+}$, Tb$^{3+}$ and Eu$^{3+}$ ions have a promising potential application for white light-emitting diodes (w-LEDs). 相似文献
6.
Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance 下载免费PDF全文
The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS2, MoSSe and MoSe2) monolayers on reconstructed GaN surface not only effectively overcomes the larger mismatch, but also brings about novel electronic and optical properties. By adopting the reconstructed GaN (0001) surface with adatoms (N-ter GaN and Ga-ter GaN), the influences of complicated surface conditions on the electronic properties of heterostructures have been investigated. The passivated N-ter and Ga-ter GaN surfaces push the mid-gap states to the valence bands, giving rise to small bandgaps in heterostructures. The charge transfer between Ga-ter GaN surface and TMD monolayers occurs much easier than that across the TMD/N-ter GaN interfaces, which induces stronger interfacial interaction and larger valence band offset (VBO). The band alignment can be switched between type-I and type-II by assembling different TMD monolayers, that is, MoS2/N-ter GaN and MoS2/Ga-ter GaN are type-II, and the others are type-I. The absorption of visible light is enhanced in all considered TMD/reconstructed GaN heterostructures. Additionally, MoSe2/Ga-ter GaN and MoSSe/N-ter GaN have larger conductor band offset (CBO) of 1.32 eV and 1.29 eV, respectively, extending the range from deep ultraviolet to infrared regime. Our results revel that the TMD/reconstructed GaN heterostructures may be used for high-performance broadband photoelectronic devices. 相似文献
7.
《Particuology》2022
Based on high specific surface area, high porosity of metal-organic frameworks (MOFs) and excellent visible light response of CdS, the CdS/Cd-MOF nanocomposites were constructed by in-situ sulfurization to form CdS using Cd-MOF as precursor and the CdS loading was controlled by the dose of thioacetamide. Under the irradiation of simulated sunlight, the degradation rate of methylene blue (MB) by 10 mg MOF/CdS-6 (mass ratio of MOF to thioacetamide is 6:1) was 91.9% in 100 min, which was higher than that of pure Cd-MOF (62.3%) and pure CdS (67.5%). This is attributed to the larger specific surface area of the composite catalysts, which provides more active sites. Meanwhile, the loading of CdS obviously broadens the light response range of Cd-MOF and improves the utilization of visible light. The Mott-Schottky model experiment shows that the formed type-II heterojunction between Cd-MOF and CdS can effectively inhibit the recombination of photogenerated electrons and holes. Meanwhile, the photocurrent intensity of MOF/CdS-6 is 8 times and 2.5 times of that of pure Cd-MOF and CdS. In addition, MOF/CdS-6 showed good photocatalytic performance after five cycles, showing excellent stability and reusability. 相似文献
8.
延安是中国共产党领导革命的中心和战略总后方,是革命的红色摇篮。延安时期出版了大量具有历史、文化以及教育意义的红色文献,这些红色文献记载了中国共产党波澜壮阔的发展历程,也反映了延安时期不断发展的科技生产水平与独特的制浆造纸工艺,具有重要的研究价值。然而,延安时期出版的红色文献虽距今不到百年时间,但其保存现状不容乐观,普遍存在纸张老化、焦脆易碎等问题,大量文献急需科学检测与修复保护,以延长其保存寿命。目前,针对延安时期红色文献的检测研究仍存在较大空白。考虑到红色文献的珍贵性与特殊性,应当尽可能选择无损检测方法对其分析检测。基于衰减全反射-傅里叶变换红外光谱法(ATR-FTIR),以木素1 510 cm-1处特征峰与纤维素1 030 cm-1处特征峰的强度作为定量依据,建立了造纸原料与红色文献纸张中木素相对含量的无损检测方法。通过检测不同碱强度与碱浓度处理后的构皮、苦竹与杨木的木素含量,考察了制浆过程中碱处理条件对造纸原料脱木素程度的影响,同时体现了红外光谱法测定木素相对含量的普适性。以复旦大学图书馆藏的76册延安时期红色文献为研究对象,分析了红色文献的纸张木素含量与纸张pH值以及纸张氧化度的相互关系。结果表明,木素相对含量高于25%的红色文献,其纸张pH集中在3~4之间且纸张氧化度较高,文献整体保存状况堪忧;而木素相对含量低于25%的红色文献,其纸张氧化度与酸度较低,文献整体保存情况较好。以上结果验证了红外光谱无损检测法用于延安时期红色文献木素含量分析的可行性,并结合纸张氧化度与酸度数据提出了纸张木素含量的合适范围,为制浆造纸中植物原料的脱木素过程提供参考。拓展了红外光谱法在红色文献无损检测中的应用范围,以期为延安时期红色文献的修复与保护研究提供科学依据。 相似文献
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10.
任梦阳 《中国无机分析化学》2022,12(2):52-55
建立了氟化氢铵消解地球化学样品,电感耦合等离子体质谱(ICP-MS)法测定样品中钨、锡和钼的方法。方法经过国家土壤和水系沉积物标准参考物质验证,方法的检出限钨为0.048μg/g、锡为0.079μg/g、钼为0.063μg/g,准确度(相对误差)钨为0.64%~6.28%、锡为0.29%~3.74%、钼为2.12%~7.41%,精密度(相对标准偏差)钨为0.13%~0.72%、锡为0.05%~1.2%、钼为0.03%~1.1%,能够满足《地质矿产实验室测试质量管理规范》的质量要求。方法具有操作简便、测试成本低、分析效率高、环境污染小等特点,适合于批量样品的分析测试。 相似文献