原位透射电镜研究正交相五氧化二铌纳米片的电化学储钠机制

由于正交相五氧化二铌(T-Nb₂O₅)为ReO₃型层状结构,锂、钠离子可以在其(001)平面快速脱嵌,而在[001]方向的传输一般较难。本研究通过原位透射电子显微镜(Transmission Electron Microscope,TEM)方法研究钠在T-Nb₂O₅纳米片(001)面内及[001]方向的钠离子电化学嵌入行为,发现由于纳米片晶体存在大量的位错和畴界,钠离子可通过这些缺陷穿越(001)面扩散,并进而在深层的(001)面内快速扩散。同时,本研究还发现刚合成的T-Nb₂O₅纳米片在[001]方向上存在调制结构,存在交替分布的压应变和张应变区域,而钠离子的嵌入可以调节这些应变分布。     

PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

利用透射电镜衬度像变化判定位错环类型及注氢纯铁中形成的位错环分析

本文分两部分,第一部分研究了利用透射电镜衬度像变化判定材料中位错环类型的方法,即采用所谓inside-outside方法来判断位错环为空位型位错环或间隙型位错环. 第二部分讨论了加速器注氢纯铁在673—773 K时效后形成的位错环的类型. 关键词： 透射电镜 空位型位错环 间隙型位错环 氢     

山竹果壳提取液中金纳米粒子的生物合成及光谱性质研究

在山竹果壳提取液中,以山竹多酚既作还原剂又作保护剂,制备了具有高度稳定性、单分散性的亲水性金纳米粒子。利用紫外可见分光光度法、透射电子显微镜和X射线衍射等手段对制备的金纳米粒子进行了表征和分析。结果表明:金纳米粒子的尺寸大小在9~23nm范围,升高温度其还原反应速率加快,所得金纳米粒子的尺寸减小、单分散性提高。山竹多酚保护金的金纳米颗粒具有pH值调控的分散可逆性。降低山竹提取液的浓度可得到包括单晶纳米片在内的多形态金纳米颗粒。     

加氢精制催化剂表面纳米棒束的电子显微镜研究

利用场发射扫描电镜(SEM)、高分辨透射电镜(HRTEM)、X射线能谱仪(EDX)和选区电子衍射(SAED)分析,对实验室硫化态加氢精制催化剂外表面上的纳米棒束的形貌、化学成分、晶体结构进行研究.SEM结果表明,该纳米棒束普遍分布于催化剂外表面并向外生长,纳米棒束形态较为规整,长度为500～1 500 nm,直径为20...     

注氢铁基二元合金中辐照位错环演化及退火温度影响研究

本文基于注氢纯铁和铁基二元合金(Fe-3%Cr、Fe-1.4%Ni和Fe-1.4%Mn,质量分数)开展常规透射电镜(200 kV)的原位表征观察,揭示了材料中辐照位错环的形态、尺寸演化行为及退火温度影响,并依据辐照损伤演化理论、退火过程中位错环平均尺寸变化推断得到空位型位错环形成温度的范围.注氢纯铁中空位型位错环的形成温度(T_c)约为500℃;添加Ni可使T_c降低至～450℃,添加Cr可使T_c升高至600℃以上,而Mn的作用与Cr相似,亦可使T_c升高.注氘实验和热脱附谱分析进一步表明,纯铁和铁基二元合金中空位型位错环的形成温度受氢同位素与空位结合、释放过程影响.合金元素Ni对氢同位素与空位的结合、释放有促进作用,故导致T_c降低;而Cr和Mn均对氢同位素与空位的结合、释放产生抑制作用,故导致T_c升高.本文展示的有关合金元素对空位型位错环形成温度影响的研究将有助于更深刻理解铁基合金体系中损伤结构演化和辐照肿胀产生机理.     

金属铈催化剂对单壁纳米碳管生长和结构的影响

研究了一种利用新型催化剂制备单壁纳米碳管（SWNTs）的工艺方法.将金属铈的氧化物（Ce O₂）与石墨粉按一定比例混合，填充到已打好孔的石墨棒中制成复合石墨电极 ，以其为阳 极在高温氦电弧中实施电弧放电.放电后的生成物经高分辨透射电子显微镜（HRTEM）和拉曼 光谱(Raman)的观察及分析表明：生成物中含有大量呈束状存在的单壁纳米碳管，管径均匀 ，平均直径为120—132nm. 关键词： 单壁纳米碳管 电弧放电 透射电镜分析     

3C-SiC纳米颗粒量子限制效应的实验证据

报道了关于3C—SiC纳米颗粒量子限制效应的实验证据．将电化学腐蚀3C—SiC多晶靶材得到的多孔材料在水溶液中进行超声处理，制备出发光的3C—SiC纳米颗粒溶液．透射电镜实验表明，所得颗粒直径分布在1-6nm范围，光致发光谱实验给出了存在量子限制效应的实验证据．发光范围在440-460nm．SiC纳米颗粒量子限制效应的发现，为该材料在光电子发光器件中的应用提供了重要的实验基础．     

氧化锌纳米带中的面缺陷

面缺陷是纳米带中非常普遍和非常重要的一类缺陷。在有些情况下，面缺陷对于高表面能指数面的出现起着决定性的作用。同时。它们可以诱导纳米带沿着特殊的方向生长。面缺陷可以是孪晶或双晶，层错和由杂质原子聚集在特定原子面所形成的间隙原子层。在本文中。利用透射电子显微术，我们将介绍氧化锌纳米带中被发现的几种面缺陷。我们确认了两种孪晶／双晶结构，它们的孪晶面分别是（01^-13）和（^-2112）面。基面层错有I1和I2两种。在大尺寸的纳米带中，I1基面层错可以折叠到（2^110）面形成棱面层错。当少量的In离子掺入氧化锌纳米带后，我们发现伴随着杂质In在基面的聚集，形成了两种倒反畴界。     

氧化锌纳米带中的面缺陷

面缺陷是纳米带中非常普遍和非常重要的一类缺陷.在有些情况下,面缺陷对于高表面能指数面的出现起着决定性的作用, 同时,它们可以诱导纳米带沿着特殊的方向生长.面缺陷可以是孪晶或双晶,层错和由杂质原子聚集在特定原子面所形成的间隙原子层.在本文中,利用透射电子显微术,我们将介绍氧化锌纳米带中被发现的几种面缺陷.我们确认了两种孪晶/双晶结构,它们的孪晶面分别是(0113)和(2112)面.基面层错有I1 和I2两种.在大尺寸的纳米带中,I1基面层错可以折叠到(2110)面形成棱面层错.当少量的In离子掺入氧化锌纳米带后,我们发现伴随着杂质In在基面的聚集,形成了两种倒反畴界.