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钛酸钡基半导化陶瓷中的PTCR效应通常与材料中的施受主掺杂切相关,蒸汽掺杂能够大幅度影响材料的PTCR效应。CdO在高温下具有较高的蒸汽压,是一种适用的蒸汽掺杂剂,研究了CdO以及CdO蒸汽对掺Y^3+的Ba1-xSrxTiO3陶瓷的PTCR效应的影响,结果首次发现了Cd^2+掺杂样品的PTCR效应都有不同程度的提高,采用蒸汽掺杂时,效果更为显著。现有的理论很难解释Cd^2+掺杂能够提高钛酸钡基材料PTCR效应。我们从缺陷化学的角度,分析了Cd^2+在BaTiO3基材料中的行为,推断表明这种现象可能是由于铁电相变时,处于晶界区的Cd^2+在Ba位和Ti位之间转换造成的。 相似文献
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Ce1-xGdxO2-x/2的溶胶-凝胶法合成及其性质 总被引:14,自引:0,他引:14
利用溶胶-凝胶法合成了Ce1-xGdxO2-x/2(x=0.1~0.6)系列固体电解质, 系统地研究了其结构、热膨胀系数和导电性. XRD结果表明, 160 ℃即完全形成立方萤石结构. 由于溶胶-凝胶法合成的物质粒度均匀, 颗粒小, 故在较低温度(1 300 ℃)时即可形成高致密样品, 此温度明显低于传统的高温固相法烧结温度(1 600~1 650 ℃). 高温X射线衍射测得Ce0.8Gd0.2O1.9的热膨胀系数为8.125×10-6 K-1. 阻抗谱表明, 溶胶-凝胶法合成可减少或消除固体电解质的晶界电阻, 600 ℃时Ce0.8Gd0.2O1.9的电导率为5.26×10-3 S/cm, 活化能Ea=0.82 eV. 相似文献
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Two Cd(Ⅱ) complexes, Cd2L2Cl2 (1) and Cd2L2(NCS)2 (2) (HL = N-(3-methoxylsalicylidene)-3-dimethylaminopropylamine) were synthesized and determined by EA, IR, TG and single-crystal X-ray diffraction. The crystallographic data are as follows: monoclinic, space group P21/n, a = 9.2710(9), b = 18.0069(18), c = 18.5562(19) A^°, β= 99.741(4)°, V = 3053.1(5), Z = 4,μ = 1.605, F(000) = 1536, R = 0.0264 and wR = 0.0699 for 1; orthorhombic, space group Pca21, a = 16.196(3), b = 11.506(2), c = 36.126(7) A^°, V = 6732(2), Z = 8,μ = 1.428, F(000) = 3264, R = 0.0376 and wR = 0.0877 for 2. There are two geometrically different octahedral Cd(Ⅱ) atoms, with N4O2 and O4Cl2 donor sets for 1 while N4O2 and N2O4 for 2. In the dinuclear Cd(Ⅱ) centers, the Cd(Ⅱ) atoms are held together by two deprotonted phenolate oxygen atoms from tetradentate L^- ligands. The thermal gravity data show two step decompositions with the residues of CdO for two complexes. 相似文献
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通过控制共沉淀时溶液中Cd/Sn摩尔比的方法,合成了物相组成不同的CdO-SnO2复合氧化物粉料,探讨了相组成与材料电导及气敏性能之间的关系。 相似文献
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Paths for the Non-radiative Recombination Occurring in CdS:CdO/Si Multi-Interface Nanoheterostructure Array 下载免费PDF全文
A CdS:CdO/Si multi-interface nanoheterostructure array (CdS:CdO/Si-NPA) is prepared by a chemical bath deposition method, and three emission bands are observed in the as-grown CdS:CdO film. By measuring its temperature-dependent photoluminescence (PL) spectrum, the variation trends of the peak energies and intensities with temperature for the three bands are obtained. Based on the theoretical analyses and fitting results, the non-radiative recombination processes corresponding to the PL quenching for the three emission bands are attributed to the thermally activated transition between heavy-hole and light-hole levels (at low temperature) and the thermal escape due to the scattering from longitudinal optical phonons (at high temperature), the transition from acceptor levels to surface states, and the transition related to surface defect states, respectively. The clarification of the non-radiative recombination processes in CdS:CdO/Si-NPA might provide useful information for promoting the performance of optoelectronic devices based on CdS/Si nanoheterostructures. 相似文献
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利用热脱附-离子捕获检测器(TPD-ITD)、四极质谱(QMS)、 X光电子能谱(XPS)、 X光衍射(XRD)等方法, 研究了在CdO表面层中 17O、 18O的富集现象。所获结果显示, CdO表面 Cd(OH)2-CdCO3层在形成过程中对含 17O、 18O的氧分子有选择包结能力。 相似文献
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通过29^Si,27^Al和^1^1^3CdMASNMR谱,观察到如下结果:(1)在Nayβ笼内形成的CdO和CdS簇,它们的^1^1^3Cd化学位移分别为115.0和100.0这些值接近于体相CdO的化学位移83.5,而远离体相CdS的化学位移583.8,因此它们的构型应归属为体相CdO的立方岩盐构型,而不属于体相CdS的配位数为4的闪锌矿构型。(2)CdO-NaY硫化时,NaY的骨架脱铝原子,脱铝原子使β笼的窗口扩大,这有利于直径大于β笼窗口的硫原子(或H2S)进入β笼对CdO[或Cd(OH)^+]硫化。 相似文献