理想的胰岛素晶体

在自然界或实验室内 ,“理想化”总是一个难以实现的概念 .但最近美国休斯顿大学的P .Vekilov教授及其同事们发现 ,他们常常可以将胰岛素晶体生长成理想的晶体形式 .他们让胰岛素蛋白质在一个已有的胰岛素晶体的螺旋位错缺陷处进行生长 ,蛋白质将绕着这个缺陷发生晶化并形成一个理想晶状胰岛素 .这是因为螺旋位错常常使晶层间产生一个微小的角度偏差 .对于大多数的晶体来说 ,晶层间的相互作用能促进晶体生长时界面间的配置 ,并导致晶层阶跃发生束缚和形成一个有条纹的晶体 .除此之外 ,在溶液中输入被溶解物质也能引起晶层阶跃的约束 .胰岛…     

Growth of NaBi（WO4）2 Dendrite and Mechanism

The solid-liquid interface motion of NaBi（WO4）2 （NBWO） melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

三硼酸锂晶体的生长形态

用自由生长系统研究了三硼酸锂ＬｉＢ_３Ｏ_５（ＬＢＯ）晶体的实际生长形态。实验表明，它的各晶面簇的重要性的顺序为：｛１１０｝＞｛０１１｝＞｛２０１｝＞｛１１１｝。讨论了ＬＢＯ晶体的生长习性与内部结构之间的关系并应用负离子配位多面体理论模型解释了ＬＢＯ晶体的生长形态。     

非线性光学材料──水草酸铵

一水草酸铵（简称ＡＯＭ）是一种优良的电光晶体￣［１］。文献￣［１，２］报道了该晶体的晶体结构，化学式为（ＮＨ＿４）＿２Ｃ＿２Ｏ＿２·Ｈ＿２Ｏ，属正交晶系，Ｐ２２２空间群，晶胞参数ａ＝０．８０３５ｎｍ，ｂ＝１。０３１ｎｍ，ｃ＝０．３８０１ｎｍ，ｚ＝２。本文拟报道ＡＯＭ单晶生长，热化学分析，透过波段以及非线性光学性质的初步研究。     

Er:Yb:KGW激光晶体生长及缺陷研究

采用顶部籽晶(TSSG)法生长ErYbKGW晶体.通过研究助熔剂的种类、组成与溶质的比例关系对晶体生长的影响,设计了合理的工艺条件转速30～40 r·min-1;拉速1～2 mm·d-1;降温生长速率0.05 ℃·h-1;降温速率15 ℃·h-1;生长周期15～20 d.通过对晶体缺陷的观察分析认为,晶体裂缝及包裹物等缺陷与生长工艺条件密切相关,应尽量减少生长过程中的温度、浓度及生长速度的波动,保持晶体的稳态生长.