SnSxSe2-x单晶纳米片的可控制备与表征

锡二硫族化合物可以通过改变硫和硒的含量来连续调控三元合金材料的带隙、载流子浓度等物理化学性质,在电子和光电子器件应用上具有巨大的潜力。本文采用化学气相沉积(CVD)技术可控地制备了不同元素组分的SnS_xSe_2-x(x=0,0.2,0.5,0.8,1.0,1.2,1.5,1.8,2.0)单晶纳米片。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)、能量色散X射线光谱(EDS)、透射电子显微镜(TEM)以及拉曼光谱等手段对SnS_xSe_2-x纳米片进行了综合表征。结果表明本方法成功实现了元素百分比可调的SnS_xSe_2-x单晶纳米片的可控制备。重点研究了依赖于元素百分比的SnS_xSe_2-x的拉曼特征谱,实验结果与基于密度泛函理论(DFT)的第一性原理计算得到的SnS_xSe_2-x的拉曼仿真谱高度吻合,理论计算结果较好地诠释了实验拉曼光谱发生变化的原因。本研究提供了一种元素百分比可调的三元SnS_xSe_2-x单晶纳米片的可控制备方法,同时对锡二硫族化合物的明确、无损识别提供了方案。     

单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

陶瓷基功能材料载体纤维增强效果及机理

以陶瓷基功能材料载体为研究对象,按照其生产工艺配方,研究了纤维种类(莫来石、氧化铝、氧化锆)及其添加量对陶瓷基功能材料载体性能的影响.在相同实验条件且不影响其功能化参数前提下,将其与未添加纤维的空白试样力学性能进行对比.结果表明,试样经1200℃烧成后,相比莫来石与氧化铝纤维增强的陶瓷基功能材料载体,氧化锆纤维的增强效果最好.当氧化锆纤维的添加量为0.8 wt;时,试样的吸水率和气孔率均较低,分别为2.0;、4.0;,相比空白对比试样抗折强度增强了42.4;.     

基于NiCo2O4纳米片电极的非对称混合电容器

The looming global energy crisis and ever-increasing energy demands have catalyzed the development of renewable energy storage systems. In this regard, supercapacitors (SCs) have attracted widespread attention because of their advantageous attributes such as high power density, excellent cycle stability, and environmental friendliness. However, SCs exhibit low energy density and it is important to optimize electrode materials to improve the overall performance of these devices. Among the various electrode materials available, spinel nickel cobaltate (NiCo₂O₄) is particularly interesting because of its excellent theoretical capacitance. Based on the understanding that the performances of the electrode materials strongly depend on their morphologies and structures, in this study, we successfully synthesized NiCo₂O₄ nanosheets on Ni foam via a simple hydrothermal route followed by calcination. The structures and morphologies of the as-synthesized products were characterized by X-ray diffraction, scanning electron microscopy, and Brunauer-Emmett-Teller (BET) surface area analysis, and the results showed that they were uniformly distributed on the Ni foam support. The surface chemical states of the elements in the samples were identified by X-ray photoelectron spectroscopy. The as-synthesized NiCo₂O₄ products were then tested as cathode materials for supercapacitors in a traditional three-electrode system. The electrochemical performances of the NiCo₂O₄ electrode materials were studied and the area capacitance was found to be 1.26 C·cm^-2 at a current density of 1 mA·cm^-2. Furthermore, outstanding cycling stability with 97.6% retention of the initial discharge capacitance after 10000 cycles and excellent rate performance (67.5% capacitance retention with the current density from 1 to 14 mA·cm^-2) were achieved. It was found that the Ni foam supporting the NiCo₂O₄ nanosheets increased the conductivity of the electrode materials. However, it is worth noting that the contribution of nickel foam to the areal capacitance of the electrode materials was almost zero during the charge and discharge processes. To further investigate the practical application of the as-synthesized NiCo₂O₄ nanosheets-based electrode, a device was assembled with the as-prepared samples as the positive electrode and active carbon (AC) as the negative electrode. The assembled supercapacitor showed energy densities of 0.14 and 0.09 Wh·cm^-3 at 1.56 and 4.5 W·cm^-3, respectively. Furthermore, it was able to maintain 95% of its initial specific capacitance after 10000 cycles. The excellent electrochemical performance of the NiCo₂O₄ nanosheets could be ascribed to their unique spatial structure composed of interconnected ultrathin nanosheets, which facilitated electron transportation and ion penetration, suggesting their potential applications as electrode materials for high performance supercapacitors. The present synthetic route can be extended to other ternary transition metal oxides/sulfides for future energy storage devices and systems.     

烧结温度对Cao.9(NaCe)0.05Bi2Nb2O9无铅压电陶瓷性能的影响

采用传统固相反应法制备了Ca0.9(NaCe)0.05Bi2 Nb2 O9铋层状无铅压电陶瓷.采用XRD、SEM、EDS及相关电学性能测试系统表征了样品的晶体结构、断面形貌、元素组成以及介电、压电、铁电等性能,探究不同烧结温度对于陶瓷性能的影响.结果表明:当烧结温度为1150℃时,样品的晶体结构单一均匀,呈现片层状结构,致密性较好,压电常数高达17 pC/N,介电损耗仅为0.42;,居里温度为908℃,并且具有很好的温度稳定性,说明固相反应法制备的Ca0.9(NaCe)0.05Bi2Nb2O9压电陶瓷最佳烧结温度为1150℃.     

高应变率下多孔未极化PZT95/5铁电陶瓷的非线性力学行为

采用添加造孔剂的方法制备了4种不同孔隙率的未极化PZT95/5铁电陶瓷。采用基于超高速相机与数字图像相关性方法的试样全场应变测量技术以及分离式霍普金森压杆（SHPB）技术，对多孔未极化PZT95/5铁电陶瓷进行高应变率单轴压缩实验研究。全场应变测量结果显示:轴向应变仅在试样中部分布较均匀，将该区域的平均应变作为应力-应变关系中的试样应变测量值较为合理，而由SHPB原理计算的试样应变值明显偏大，需要摒弃或修正传统的SHPB数据处理方法。通过波形整形技术实现了恒应变率加载，弱化了径向惯性效应的影响，揭示出多孔未极化PZT95/5铁电陶瓷的压缩强度具有显著的应变率效应。通过分析试样轴向应变和径向应变随着加载应力的变化，阐明多孔未极化PZT95/5铁电陶瓷的非线性变形行为的物理机制是畴变和相变共同作用，并发现畴变临界应力和相变临界应力都随着应变率升高而增大。保持加载应变率不变，讨论了孔隙率对多孔未极化PZT95/5铁电陶瓷动态力学行为的影响，发现随着孔隙率的升高，动态压缩强度呈非线性衰减，而畴变临界应力和相变临界应力则基本呈线性衰减。     

氧化锌电阻阀片中ZnO(002)/β-Bi_2O_3(210)界面结构的第一性原理研究

为了从物质微观结构上了解氧化锌避雷器阀片的性能,采用基于密度泛函理论的第一性原理方法对ZnO(002)/β-Bi_2O_3(210)界面结构进行弛豫和电子结构计算.结果表明弛豫后,原子间的键长发生改变.界面区域差分电荷密度图和原子布居分析可得ZnO层片中Zn原子电荷缺失,β-Bi_2O_3层片中O原子电荷富集,ZnO层片向β-Bi_2O_3层片转移电子电荷23.61e.晶界结构的内建电场由ZnO层片指向β-Bi_2O_3层片,内建电场是ZnO电阻阀片具有非线性伏安特性的重要原因.界面附近态密度表明界面的结合主要依靠ZnO层片中Zn原子与β-Bi_2O_3层片中O原子相互作用.计算显示ZnO(002)/β-Bi_2O_3(210)界面结合较强,界面能约为-4.203 J/m~2.本文研究结果对于研制高性能非线性伏安特性氧化锌电阻片提供了机理解释和理论支持.     

羧基化碳纳米片电化学传感器的研制及其在喹赛多灵敏检测中的应用

本文构筑了一种基于羧基化碳纳米片修饰电极的喹赛多电化学传感器,该传感器对喹赛多的电化学还原具有优良的催化性能。与金电极相比,其电流增幅达到30余倍。通过优化羧基化碳纳米片涂覆量,Na_3PO_4浓度,电解液pH,富集电位,富集时间,搅拌速度等测试条件,建立了基于羧基化碳纳米片修饰电极的喹赛多超高灵敏度分析方法,其检出限可达3.79×10~(-9) mol·L~(-1)(S/N=3)。利用该方法对加标猪肉样品进行检测,结果令人满意。     

高居里温度铁电单晶PIN-PT的机电性能

弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。