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Zn1-xCdxO crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron supttering technique. X-ray diffraction measurements show that the Zn1-xCdxO films are of completely (002)-preferred orientation for x≤0.6. For x=0.8, the film is a mixture of ZnO hexagonal wurtzite crystals and CdO cubic crystals. For pure CdO, it is highly (200) preferential-oriented. Photoluminescence spectrum measurement shows that the Zn1-xCdxO(x=0.2) thin film has a redshift of 0.14eV from that of ZnO reported previously.  相似文献
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 运用基于密度泛函理论的平面波赝势方法(PWP),计算研究了氧化镉NaCl结构(B1结构)和CsCl结构(B2结构)在不同压力条件下的几何结构、弹性性质、电子结构和光学性质。交换关联能分别采用广义梯度近似(GGA)和局域密度近似(LDA)。通过比较计算和实验得到的晶格常数和体模量不难发现,LDA的计算结果更符合实验值。在高压的作用下,两种结构的导带能级有向高能级移动的趋势,而价带能级有向低能级移动的趋势,因此直接带隙变大。同时,对照态密度分布图及高压下能级的移动情况,分析了CdO两种结构在高压作用下的光学性质。  相似文献
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利用热脱附-离子捕获检测器(TPD-ITD)、四极质谱(QMS)、X光电子能谱(XPS)、X光衍射(XRD)等方法,研究了在CdO表面层中^17O、^18O的富集现象。所获得结果显示,CdO表面Cd(OH)2-CdCO3层在形成过程中对含^17O、^18O的氧分子有选择包结能力。  相似文献
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利用溶剂热法设计了合成Cd(OH)2和CdO纳米盘的研究性实验.以Cd(CH3COO)2等为镉源,与NaOH在水和乙二醇的混合溶剂中反应得到Cd(OH)2纳米盘(中间镉产物),后在高温下煅烧中间产物分解得到CdO纳米盘.该实验有助于理解溶剂热法中各实验参量的作用以及如何通过调节各实验参量最终得到目标产物.  相似文献
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A CdS:CdO/Si multi-interface nanoheterostructure array (CdS:CdO/Si-NPA) is prepared by a chemical bath deposition method, and three emission bands are observed in the as-grown CdS:CdO film. By measuring its temperature-dependent photoluminescence (PL) spectrum, the variation trends of the peak energies and intensities with temperature for the three bands are obtained. Based on the theoretical analyses and fitting results, the non-radiative recombination processes corresponding to the PL quenching for the three emission bands are attributed to the thermally activated transition between heavy-hole and light-hole levels (at low temperature) and the thermal escape due to the scattering from longitudinal optical phonons (at high temperature), the transition from acceptor levels to surface states, and the transition related to surface defect states, respectively. The clarification of the non-radiative recombination processes in CdS:CdO/Si-NPA might provide useful information for promoting the performance of optoelectronic devices based on CdS/Si nanoheterostructures.  相似文献
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