首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3篇
  完全免费   10篇
  物理学   13篇
  2014年   4篇
  2013年   2篇
  2011年   1篇
  2009年   4篇
  2008年   1篇
  1992年   1篇
排序方式: 共有13条查询结果,搜索用时 31 毫秒
1.
优化夫兰克-赫兹实验条件   总被引:1,自引:0,他引:1  
利用改造后的第一代夫兰克-赫兹实验仪,通过计算机输入不同实验参量,得到相应实验条件的曲线及数据;在同一坐标界面中显示不同参量的多条实验曲线,分析了温度T、灯丝电压UF、第一栅极电压UG1K、阻滞电压UR及第二栅极电压UG2K对夫兰克-赫兹实验曲线形状及测量精度的影响,进而确定了各参量的最佳值.  相似文献
2.
金书筍 《应用声学》1992,11(1):49-49
北京市新技术产业试验区的金星超声波应用技术研究所最近完成了VMOS大功率管超声波发生器及VMOS超声波清洗机。。其超声波功率从150W至1000W,频率为35KC和28KC,构成了新型的超声波清洗机系列。VMOS功率器件与晶体管比具有高开关速度、低开关损耗,低拖尾电流、对温度不敏感、无二次击穿,栅极电压激励所需信号功率小等优点,这使得VMOS超声波清洗机发生器可靠性高、效率高、体积小、重量轻。采用大功率VMOS器件制做超声波清洗  相似文献
3.
通过公式与绘图比对实验测得的数据,研究电子与氩原子的夫兰克-赫兹实验中不同阴极电压、第一栅极电压、反向电压下,板极电流随加速电压的变化情况。分析板极电流发生变化的规律及原因,观察测得数据及其绘制的夫兰克-赫兹曲线找出对实验研究负向影响最小的阴极电压、第一栅极电压、反向电压的参考数值。  相似文献
4.
We analyze the reading and initialization of a topological qubit encoded by Majorana fermions in one-dimensional semiconducting nanowires, weakly coupled to a single level quantum dot (QD). It is shown that when the Majorana fermions are fused by tuning gate voltage, the topological qubit can be read out directly through the occupation of the QD in an energy window. The initialization of the qubit can also be realized via adjusting the gate voltage on the QD, with the total fermion parity conserved. As a result, both reading and initialization processes can be achieved in an all-electrical way.  相似文献
5.
A non-recessed-gate quasi-E-mode double heterojunction A1GaN/GaN high electron mobility transistor (quasi-E- DHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering (DIBL) was presented. Due to the metal organic chemical vapor deposition (MOCVD) grown 9-nm undoped A1GaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas (2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1%tm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.  相似文献
6.
We show a scheme to generate entangled coherent states in a circuit quantum electrodynamics system, which consists of a nanomechanical resonator, a superconducting Cooper-pair box (CPB), and a superconducting transmission line resonator. In the system, the CPB plays the role of a nonlinear medium and can be conveniently controlled by a gate voltage including direct-current and alternating-current components. The scheme provides a powerful tool for preparing the multipartite mesoscopic entangled coherent states.  相似文献
7.
A gate-to-body tunneling current model for silicon-on-insulator (SOl) devices is simulated. As verified by the mea- sured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model.  相似文献
8.
探究了弗兰克-赫兹实验的最佳实验条件及第一激发电位,通过分析实验数据得出最佳实验条件为灯丝电压3.3V,第一栅极电压1.7V,拒斥电压5.0V,得到氩原子的第一激发电位为11.543eV,并分析原因.  相似文献
9.
We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage (BV) of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.  相似文献
10.
A silicon nanowire (Si-NW) sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.  相似文献
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号