SU(2)×SU(2)准自旋模型和自洽解的对称性恢复方法——Ⅰ.严格解和HF近似

本文提出了一个含有两类相互作用的准自旋模型,讨论了模型Hamilton量在SU(2)×SU(2)基中的严格解、基态相变和波函数的K结构,并用此模型探讨了HF近似的有效性。     

在高密度下核物质的色超导性

建立了相变热力学理论和场论的关系. 强调在量子场论中必须引进序参量场， 则相变的讨论就类似于Goldstone bosons 的产生. 如果只讨论一级相变， Goldstone bosons场就足够了; 如果要讨论二级相变， 则必须讨论一系列的场， 这些场构成一个对称群的表示. 另外, 也将这一思想用到色超导中. In this paper we built a relation between the thermodynamical theory of the phase transition and field theory. We emphasized that in the quantum field theory we have to introduce the order parameter fields. Then the discussion of the phase transition is closed to the creation of the Goldstone bosons. If we only discuss the first order transition, the Goldstone bosons fields are sufficient. If we want to discuss the second order transition, we have to discuss a set of fields that constructs a representation of a symmetry group. We also apply this concept to color superconductivity.     

随机化交通灯的二维元胞自动机交通模型

元胞自动机交通模型以简单的规则反映交通系统中的多种因素，可以分析各种交通现象，且可在计算机上方便、高效地运作·Ｂｉｈａｍ－Ｍｉｄｄｌｅｔｏｎ－Ｌｅｖｉｎｅ模型（ＢＭＬ模型）实现了二维交通问题的元胞自动机模型的模拟研究·本文对ＢＭＬ模型作了改进，解除了该模型中关于交通灯同步变化的限制·在新模型中，每个路口的交通灯可以自由选定起始工作时间和变化节奏，于是可以更全面、准确地反映交通灯对交通系统性能的影响·本文还对新模型中出现的若干新效应作了解释·     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

Equation of State of Dense Liquid Nitrogen in the Region of the Dissociative Phase Transition

We have measured the equation of state for liquid nitrogen compressed dynamically to a pressure of 10-60 GPa by employing a two-stage light-gas gun.The data show a continuous phase transition above the shock pressure of 33GPa,as indicated previously by shock wave experiments.A theoretical model has been derived to examine the experimental data by inducing a molecular dissociative fraction.According to theoretical and experimental date the phase transition was thought to be a molecular dissociative phase transition.     

Calculation of the Specific Heats for the Ⅱ—Ⅲ and Ⅱ—Ⅳ Phase transitions in NH4I

This study gives our calculation for the specific heats CVI due to an Ising model using the observed Cp data for the Ⅱ-Ⅲ and Ⅱ-VI phase transitions in NH4I.By fitting to the CP data we determine the values of the critical exponent for the pressure of 0.14GPa(Ⅱ-Ⅲ phase transition)and for the pressures of 0.75,1.35and 1.97 GPa (II-IV phase transition)in NH4I.Our exponent values values are close to the predicted values of the specific heat in a three-dimensional Ising model.Our calculated CVI are in good agreement with the experimental CP for NH4I in most cases.     

蓝光相变光盘的多层膜结构设计

为了使光盘获得优良的记录／读出性能并能够长期稳定地使用，必须优化设计相变光盘的多层膜结构。采用自行设计的模拟分析相变光盘读出过程设计软件，从光学角度出发模拟计算了蓝光(405nm)相变光盘的膜层结构，研究了多层膜系的反射率和反射率对比度等光学参量与各层膜厚度和槽深的关系。研究得出的最佳多层膜结构为：下介电层／记录层／上介电层／反射层的厚度对于台记录为100nm／10nm／25nm，／60nm，而对于槽记录则为140nm／15nm／30nm，／60nm，槽深为50nm。模拟计算结果对于将来高密度蓝光相变光盘的制备具有一定的指导意义。     

三羟甲基甲胺、季戊四醇及其二元体系固-固相变的变温红外光谱研究

利用傅里叶变温红外光谱仪分别测定了三羟甲基甲胺（TAM）、季戊四醇（PE）及其二元体系变温红外谱。实验表明，多元醇分子中羟基吸收峰随温度升高耐发生位移向高波数移动，此结果既能反映多元醇及其二体系固－固相变的温度区间，又与转变热相对应，从而揭示了多元醇及其二元体系固－固相变贮热的机理。     

键座渗流与稀磁体系的相变

本文首先将键渗流和座渗流中的普适关系加以推广,建立了键座渗流的相界关系;接着研究了稀磁体系的相变问题,应用Potts模型,推出稀磁体系的铁磁-顺磁和反铁磁-顺磁相交的相界关系。与已往文献中处理这类问题所采用的级数法、有限集团近似、数值模拟和重整化群等方法相比,本文所给出的解析式具有使用方便、简单、物理概念清晰,且较为精确等优点.     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.