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1.
《Journal of Crystal Growth》2006,286(2):400-406
Radiofrequency (RF) nitrogen plasma sources are commonly employed in the growth of group III-nitrides by molecular beam epitaxy and reactive evaporation. These sources produce atomic nitrogen and excited molecules (N2*). In this work the relative flux of these two species produced by an RF source was studied by emission spectroscopy as a function of power, pressure, and argon dilution. Polycrystalline indium nitride thin films were synthesized under the same conditions. It was found that argon dilution had a strong influence on the production of active nitrogen, with maximum fluxes obtained around ∼40% N2. Film properties, as measured by X-ray diffraction, atomic force microscopy and Hall effect, were also optimized at this condition. It was observed that the Hall mobility scaled with the sum of N and N2* emission, suggesting that both species may be beneficial for InN growth.  相似文献   
2.
Kinetics of oxidation of lactose, maltose, cellobiose and melibiose has been studied by hexacyanoferrate(III) in the presence of ammonia. A general mechanism involving the formation of intermediate enodiol anion has been suggested. The effects of dielectric constant and salts have been studied in detail. The oxidation products have been characterised by descending paper chromatography. Compensation effects have been observed.  相似文献   
3.
研究具有数据丢失的网络化控制系统的基于观测器的镇定问题。受控对象是由T-S模糊模型描述的非线性时滞系统。把数据丢失过程建模成独立同分布过程。利用模糊Lyapunov函数方法得到了闭环系统随机稳定的充分条件,其基于观测器的反馈控制器可通过求解一组线性矩阵不等式来设计。一个仿真例子说明方法的有效性。  相似文献   
4.
合成了七(2,3-二-O-乙酰基-6-O-叔丁基二甲基硅烷基)-β-环糊精,并采用静态法成功地将其涂渍到弹性石英毛细管柱上。研究了其气相色谱分离性能,发现此固定相涂渍性好,柱效较高,热稳定性好,对卤代芳烃异构体以及难分离的二取代苯的位置异构体具有良好的分离能力。  相似文献   
5.
Low frequency (< 30 cm-1) Raman scattering lineshapes for the chalcogenide glasses As2S3 and As2Se3 have been interpreted in terms of a model which explicitly includes acoustic (∼ ω2 density-of-states) and optic (rigid-layer like) vibrational modes.  相似文献   
6.
7.
The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.  相似文献   
8.
Ultrasonic velocity, density, refractive index and viscosity of binary mixtures of aniline with acetic acid (AA) and propionic acid (PA) have been measured at 293.15, 303.15 and 313.15 K over the entire composition range. Further, the specific heat ratio, heat capacity, effective Debye temperature and pseudo-Gruensisen parameter and non-linearity parameter have been evaluated using ultrasonic absorption data. The deviation in isentropic compressibility, excess molar volume, excess intermolecular free length, deviation in molar refraction, deviation in viscosity, relaxation time, enthalpy, entropy and Gibbs energy of activation have been calculated from the experimental data and fitted with the Redlich-Kister polynomial equation. A comparative study has also been made between experimental and theoretically calculated values of densities using the HBT and Rackett density models. Mixing rules for the prediction of refractive index, e.g. Lorentz-Lorenz (L-L), Eykmen (Eyk), Weiner (W), Heller (H), Gladstone-Dale (G-D), Arago-Biot (A-B) and Newton (N) have been applied to these binary mixtures.  相似文献   
9.
《Tetrahedron letters》2014,55(52):7190-7193
An iron-catalyzed coupling reaction of methylarenes with thiols leading to thioesters has been developed. The reactions were carried out in water with tert-butyl hydroperoxide (TBHP) as the oxidant and polyoxyethanyl α-tocopheryl sebacate (PTS) as the surfactant. The reaction medium is compatible with a series of functional groups and can be reused.  相似文献   
10.
任意k×n阶电阻网络等效电阻的公式研究属于科学难题,到目前为止已经获得了当k=1,2,…,5时的5种情形下的等效电阻公式,但对k≥6时的等效电阻的普适公式仅仅作为猜想给出.本文根据建立的任意k×n阶电阻网络等效电阻研究的方法,证明了k=6时的等效电阻公式的正确性,并且给出了其无穷网络的等效电阻公式,在对比验证时得到了一些新的三角恒等式.  相似文献   
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