低加速度灵敏度水听器

本文介绍了一种用于拖曳线列阵声呐的压电陶瓷型水听器，我们在提高水听器工作稳定性与可靠性，并确保水听器有较高接收灵敏度的前提下，进行了水听器的结构方案优化设计，以降低水听器的加速度灵敏度，研制的水听器接收灵敏度为－１９３ｄＢ，在２０－１０００Ｈｚ频段内灵敏度起伏为１．２ｄＢ，加速度灵敏为－７０ｄＢ。     

Yield analysis of large‐area high‐power single‐chip GaN‐based light‐emitting diodes with network design

In this Letter, a GaN‐based high‐power (HP) single‐chip (SC) large‐area LED with parallel and series network structure is fabricated. The optical characteristics of the HP‐SC LED is investigated. Driven at 600 mA, the optical output power of the HP‐SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light‐extraction efficiency degradation and the self‐heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP‐SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large‐area LEDs.

     

Beam alignments based on the spectrum decomposition of orbital angular momentums for acoustic-vortex communications

Given the enhanced channel capacity of wave chirality, acoustic communications based on the orbital angular momentum (OAM) of acoustic-vortex (AV) beams are of significant interest for underwater data transmissions. However, the stringent beam alignment is required for the coaxial arrangement of transceiver arrays to ensure the accuracy and reliability of OAM decoding. To avoid the required multiple measurements of the traditional orthogonality based algorithm, the beam alignment algorithm based on the OAM spectrum decomposition is proposed for AV communications by using simplified ring-arrays. Numerical studies of the single-OAM and OAM-multiplexed AV beams show that the error of the OAM spectrum increases with the translation distance and the deflection angle of the transceiver arrays. To achieve an ideal arrangement, two methods of the single-array translation alignment and the dual-array deflection alignment are developed based on the least standard deviation of the OAM spectrum (SD-OAM). By decreasing the SD-OAM towards zero using transceiver arrays of 16 transmitters and 16 receivers, accurate beam alignments are accomplished by multiple adjustments in three dimensions. The proposed method is also demonstrated by experimental measurements of the OAM dispersion and the SD-OAM for misaligned beams. The results demonstrate the feasibility of the rapid beam alignment based on the OAM spectrum decomposition by using simplified transceiver ring-arrays, and suggest more application potentials for acoustic communications.     

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density （3× 10^11 cm^-2 ） were deposited on ultra-thin tunnel oxide layer （- 3 nm） and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanoerystals, which slows the charge loss rate.     

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Nanowire devices with back gate are fabricated in a heavy doped ultra thin SOI layer by electron beam lithography. Regular and periodic Coulomb oscillations with single dot behavior are observed in an appropriate back gate voltage range. The oscillation period can be determined by the back gate capacitance. The role of the back gate can control the electrical characteristics from the multi-dot junction regimes to the single dot junction regimes. These Coulomb oscillations due to single-electron tunneling are not smeared out by thermal vibration energy when the temperature is less than 40 K.     

Simultaneous thermogravimetric and mass spectrometric analysis of the pyrolysis of municipal solid wastes and polyethylene terephthalate

A thermogravimetric (TG) and mass spectrometric (MS) study was carried out of the process of devolatilization of the organic fraction of municipal solid wastes (OFMSW) and polyethylene terephthalate (PET). This involved an analysis of the heating profiles in an inert atmosphere for each of these residues separately and for a mixture made up of half of each by mass. The fit between the experimental and calculated values was checked by means of the least squares method. No interaction at all was observed between the two types of waste when the fit between the experimental and theoretical figures was checked, in the light of the low values obtained from the objective function showing fit. The study of mass spectrometry shows major emissions of energy-producing gases although fewer pollutants are emitted.     

多卜勒计程仪

本文简要回顾多卜勒计程仪的发展和用途，分析了多卜勒计仪为导航设备的优点，工作原理，主要性能及组成部件，最后介绍了多卜勒计程仪在我国的设计情况。     

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.     

双栅调控的硅量子线中的库仑振荡效应

基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛. 关键词： 库仑振荡 单电子效应 硅量子线     

一种基于弱监督学习的声图小目标快速检测方法*

小目标检测是声呐图像理解中最引人瞩目,同时又极具挑战性的任务之一。该文基于离散余弦变换和K-近邻聚类,提出了一种快速检测方法。离散余弦变换用于生成图像的指纹,是原始图像在二维频域的一种稀疏表达;改进的K-近邻模型对于带有标签数据的需求量相对较低,提升了算法的处理效率和对弱监督场景的适应性。经试验验证,该方法可在准确率和召回率之间达到一个恰当的平衡点,同时在实时成像的合成孔径声呐图像小目标检测中,获得了较为可靠的结果。