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1.
Finger vein recognition has been adopted due to its high recognition rate and the invisibility of vein in visible light. However, because a finger vein pattern is not distinctive due to light scattering in the skin layer, the localization of a finger vein pattern region using an image processing algorithm is a difficult procedure. Also, optical blurring increases these difficulties. We propose a new finger vein image restoration method to deal with skin scattering and optical blurring. Our research is novel in three ways compared to previous studies. Firstly, the amount of optical blurring of a finger vein image is measured based on the average gradient of the orthogonal profile of a finger edge. Secondly, the accurate point spread function (PSF) of optical blurring is adaptively determined based on the orthogonal profile of a finger edge. Thirdly, using a constrained least square (CLS) filter and optimized parameters in terms of the lowest error of finger vein recognition, the restoration of a skin scattered and optically blurred finger vein pattern was performed. Experimental results show that the equal error rate (EER) of finger vein recognition with restoration was reduced by as much as 3.14% (5.05-1.91%) compared to the EER without restoration.  相似文献
2.
We report on the defects related room temperature ferromagnetic characteristics of Zn0.95-xMnxLi0.05O (x = 0.01, 0.03, 0.05 and 0.08) thin films grown on glass substrates using reactive magnetron sputtering. By increasing the Mn content, the films exhibited increases in the c-axis lattice constant, fundamental band gap energy, coercive field and remanent magnetization. Comparison of the structural and magnetic properties of the as-deposited and annealed films indicates that the hole carriers, together with defects concentrations, play an important role in the ferromagnetic origin of Mn and Li co-doped ZnO thin films. The ferromagnetism in films can be described by bound magnetic polaron models with respect to defect-bound carriers.  相似文献
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Variations of the conduction type of germanium at low temperature
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5.
A special morphological zinc oxide (ZnO) photoanode for dye-sensitized solar cell was fabricated by simple sol–gel drop casting technique. This film shows a wrinkled structure resembling the roots of banyan tree, which acts as an effective self scattering layer for harvesting more visible light and offers an easy transport path for photo-injected electrons. These ZnO electrode of low thickness (~5 μm) gained an enhanced short-circuit current density of 6.15 mA/cm2, open-circuit voltage of 0.67 V, fill factor of 0.47 and overall conversion efficiency of 1.97 % under 1 sun illumination. This shows a high conversion efficiency and a superior performance than that of ZnO nanoparticle-based photoanode (η ~ 1.13 %) of high thickness (~8 μm).  相似文献
6.
Contrary to Bohr’s complementarity principle, in 1995 Rabinowitz proposed that by using entangled particles from the source it would be possible to determine which slit a particle goes through while still preserving the interference pattern in the Young’s two slit experiment. In 2000, Kim et al. used spontaneous parametric down conversion to prepare entangled photons as their source, and almost achieved this. In 2012, Menzel et al. experimentally succeeded in doing this. When the source emits entangled particle pairs, the traversed slit is inferred from measurement of the entangled particle’s location by using triangulation. The violation of complementarity breaches the prevailing probabilistic interpretation of quantum mechanics, and benefits Bohm’s pilot-wave theory.  相似文献
7.
In this study, we report the observation of memory effect in TiO2–GO nanocomposite films. Electrical properties of the prepared Al/TiO2–GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO2–GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO2 matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 105 cycles and long retention time more than 5×103 s5×103 s.  相似文献
8.
Jeong JS  Chang JH  Shung KK 《Ultrasonics》2012,52(6):730-739
In an ultrasound image-guided High Intensity Focused Ultrasound (HIFU) surgery, reflected HIFU waves received by an imaging transducer should be suppressed for real-time simultaneous imaging and therapy. In this paper, we investigate the feasibility of pulse compression scheme combined with notch filtering in order to minimize these HIFU interference signals. A chirp signal modulated by the Dolph-Chebyshev window with 3-9 MHz frequency sweep range is used for B-mode imaging and 4 MHz continuous wave is used for HIFU. The second order infinite impulse response notch filters are employed to suppress reflected HIFU waves whose center frequencies are 4 MHz and 8 MHz. The prototype integrated HIFU/imaging transducer that composed of three rectangular elements with a spherically con-focused aperture was fabricated. The center element has the ability to transmit and receive 6 MHz imaging signals and two outer elements are only used for transmitting 4 MHz continuous HIFU wave. When the chirp signal and 4 MHz HIFU wave are simultaneously transmitted to the target, the reflected chirp signals mixed with 4 MHz and 8 MHz HIFU waves are detected by the imaging transducer. After the application of notch filtering with pulse compression process, HIFU interference waves in this mixed signal are significantly reduced while maintaining original imaging signal. In the single scanline test using a strong reflector, the amplitude of the reflected HIFU wave is reduced to −45 dB. In vitro test, with a sliced porcine muscle shows that the speckle pattern of the restored B-mode image is close to that of the original image. These preliminary results demonstrate the potential for the pulse compression scheme with notch filtering to achieve real-time ultrasound image-guided HIFU surgery.  相似文献
9.
In this paper, we report a facile quantum dot/In?CInOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.  相似文献
10.
The thermal conductivity of zinc oxide-polymethyl methacrylate (PMMA) composites has been measured. Using theoretical models, the thermal resistance of ZnO-NW/PMMA interfaces (NW is the nanowire) and the critical particle radius above which the composite thermal conductivity can be increased have been estimated. Based on these measurements, the dependence of the thermal conductivity of zinc oxide nanowires on their diameter has been determined.  相似文献
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