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Journal of Radioanalytical and Nuclear Chemistry - The simplified 8-oxide system (SiO2-B2O3-Na2O-Al2O3-CaO-TiO2-MoO3-La2O3) has been prepared under two types of cooling methods, and analyzed with...  相似文献   
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In this study, the transverse relaxation time (T2) of activated carbon (AC) in different relative environment humidity was detected firstly by low-field nuclear magnetic resonance (LFNMR). The pore size (diameter) of AC distributions was calculated by the relationship between T2 and surface relaxation rate (ρ), where ρ was obtained by the detection of nine porous materials with known pore size. The results showed that the pore size distributions of AC calculated by ρ < 0.19 nm/ms were in good agreement with that obtained by nitrogen adsorption method and proved that LFNMR as a new detection method was feasible for characterizing AC pore size distribution.  相似文献   
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Tian  Xiu-Zhi  Yang  Rui  Ma  Jia-Jia  Ni  Yong-Hao  Deng  Hai-Bo  Dai  Lei  Tan  Jiao-Jun  Zhang  Mei-Yun  Jiang  Xue 《高分子科学》2022,40(7):789-798
Chinese Journal of Polymer Science - Antistatic and strength properties are of vital importance for polyurethane rubber used in moving parts of many industrial instruments. Herein, polyurethane was...  相似文献   
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The separation efficiency of charge carriers determines the analytical sensitivity of the paper-based photoelectrochemical sensor. Herein, the Lewis base modification strategy is proposed to promote the carrier separation through an in-situ ion exchange method. Firstly, three-dimensional paper-based hierarchically TiO2 (PHT) arrays are prepared with the one-step hydrothermal method. With the aid of Lewis base, the photo-induced charge separation efficiency and the photocurrent signal are obviously increased. Ultimately, sensitive sensing of prostate specific antigen (PSA) is achieved and the linear range is 1 pg/mL–100 ng/mL with the detection limitation of 0.3 pg/mL.  相似文献   
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Lin  Yu  Wu  Yeyu  Tan  Xuecai  Wu  Jiawen  Huang  Kejing  Mi  Yan  Ou  Panpan  Wei  Fucun 《Journal of Solid State Electrochemistry》2022,26(4):959-971
Journal of Solid State Electrochemistry - An ultrasensitive “signal-off–on” electrochemiluminescence (ECL) biosensor is constructed based on f1-TiO2/g-C3N4/PDA for thrombin...  相似文献   
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We propose a scheme for teleportation of an arbitrary two-qubit state by using a Bell state as the quantum channel working together with an auxiliary qubit. Our scheme needs less entanglement resource, but at the cost of shortening teleportation distance. This is because that in order to successfully recover the teleported state, both sender and receiver need to implement quantum-gate operations on the shared auxiliary qubit. So, the auxiliary qubit must be close to both sender and receiver. Otherwise, the sender and receiver cannot carry out quantum-gate operations on it. Thus, our scheme is invalid for long-distance teleportation. But for short-distance teleportation, our scheme is an optimal choice because it requires less entanglement resource. From a practical point of view, our scheme is very promising for application in quantum teleportation on chip.

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Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge.  相似文献   
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