单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

基于无人机探测大柴旦地区近地层气溶胶特征

通过改装多旋翼无人机（UAV）和搭载各类载荷以及联合地基观测设备对大柴旦地区大气、环境以及气溶胶参数进行测量。利用获得的数据资料，对该地区近地层气溶胶粒子数浓度（即单位体积空气中气溶胶粒子的数目）、消光系数以及气象要素等特征进行了分析。结果表明，在大柴旦地区，近地层气溶胶粒子数浓度日变化显著，呈现双峰形态，气溶胶粒子数浓度的变化范围为75～220 cm^-3,消光系数的变化范围为0.004～0.038 km^-1;当风速小于6 m/s时，气溶胶粒子数浓度与风速呈负相关关系；当风速大于6 m/s时，二者呈正相关关系；相对湿度对气溶胶粒子的影响较小，这可能是由于该地区以沙尘型气溶胶为主，吸湿性较弱。本研究基于多旋翼无人机探测平台，可以有效地获得近地层精细化大气、环境结构，有助于研究人员了解该地区气溶胶的结构、变化特征以及建立气溶胶模式，同时也为气溶胶及大气环境参数探测方法提供了技术支撑及思路拓展。     

以磷化铁为添加剂沿(111)面生长磷掺杂金刚石大单晶

掺杂是调控金刚石性能的一种重要手段。本文采用温度梯度法,在5.6 GPa、1 312 ℃的条件下,选用Fe₃P作为磷源进行磷掺杂金刚石大单晶的合成。金刚石样品的显微光学照片表明,随着Fe₃P添加比例的增加,金刚石晶体的颜色逐渐变深,包裹体数量逐渐增加,晶形由板状转变为塔状直至骸晶。金刚石晶形的变化表明Fe₃P的添加使生长金刚石的V形区向右偏移,这是Fe₃P改变触媒特性的缘故。红外光谱分析表明,Fe₃P的添加使金刚石晶体中氮含量上升,这说明磷的进入诱使氮原子更容易进入金刚石晶格中。激光拉曼光谱测试表明,随着Fe₃P添加比例的增加,所合成的掺磷金刚石的拉曼峰位变化不大,其半峰全宽(FWHM)值变大,这说明磷的进入使得金刚石晶格畸变增加。XPS测试结果显示,随着Fe₃P添加比例的增加,金刚石晶体中磷相对碳的原子百分含量也会增加,这意味着添加Fe₃P所合成的金刚石晶体中有磷存在。     

Investigation of Thermal Gradient Mechanical Fatigue Test Methods for Nickel-based Superalloys

Experimental Mechanics - Temperature gradients significantly affect the material fatigue process. A reliable and robust test procedure is needed for quantifying the effects of temperature gradients...     

On U(n)-invariant strongly convex complex Finsler metrics

Science China Mathematics - In this paper, we obtain a necessary and sufficient condition for a U(n)-invariant complex Finsler metric F on domains in ?n to be strongly convex, which also...     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

A visual uncertainty analytics approach for weather forecast similarity measurement based on fuzzy clustering

Journal of Visualization - Forecast calibration methods based on historical similar atmospheric state are effective means weather forecast accuracy. Conventional approaches search similar forecasts...     

Termination of a pinned spiral wave by the wave train with a free defect

Nonlinear Dynamics - Spiral waves in the cardiac tissue may cause life-threatening arrhythmia. Such waves can be anchored to a local heterogeneity and form stable pinned waves, which are difficult...