双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射

高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项"卡脖子"关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7 nm极紫外光输出.首先,理论计算Gd¹⁸⁺—Gd²⁷⁺离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd¹⁴⁺—Gd¹⁷⁺离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7 nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7 nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势,在双脉冲延时为100 ns处产生的极紫外光辐射最强.并且,在延时为100 ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效地减弱等离子体的自吸收效应,获得的6.7 nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30 ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3.同时...     

吉林大学化学学院研究生课程思政的多维度构建与探索*

研究生课程思政的建设影响着研究生的培养质量,关乎着能否实现立德树人这一人才培养的根本任务。介绍了吉林大学化学学院立足学科特点,在研究生课程思政建设方面取得成功的经验,并对未来的课程思政建设方向进行了探讨。     

材料表征方法理论与实践课程的改革与建设*

通过与超星专业慕课制作团队合作搭建网络教学平台,将线上慕课教学与线下实验教学相结合,对材料表征方法理论与实践课程进行了全方位的改革。与传统实验教学相比,改革后的课程不仅能够激发学生的学习兴趣,实现时间空间的相对自由,还可以完善考核机制,提升教学质量,从而为高校化学研究生实验课程的改革提供一定的借鉴意义。     

Dynamic behavior and stability analysis of nonlinear modes in the fourth-order generalized Ginzburg–Landau model with near $$\mathcal{PT}$$ PT -symmetric potentials

Nonlinear Dynamics - Parametrically excited oscillators are used in several domains, in particular to improve the dynamical behaviour of systems like in the case of the parametric amplification or...     

Experimental study on the runaway behaviors of Panasonic 21,700 LiNi0.8Co0.15Al0.05O2 battery used in electric vehicle under thermal failure

Journal of Thermal Analysis and Calorimetry - Thermal runaway phenomena of the Panasonic 21,700 LiNi0.8Co0.15Al0.05O2 lithium-ion batteries with 100, 50 and 25% capacity were studied under thermal...     

Nonlinear compressed sensing-based adaptive modal shapes selection approach for efficient dynamic response analysis of flexible multibody system

Nonlinear Dynamics - The modal truncation is usually used in the dynamic response analysis of flexible multibody systems, in which, appropriate selection of modal shapes is very critical to achieve...     

Differential Entropy of Induced Random State Ensemble

International Journal of Theoretical Physics - In this paper, we will consider the exact calculation of differential entropy of induced random state ensemble by partial tracing a subsystem over...     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

Moderate Deviations for Extreme Eigenvalues of Real-Valued Sample Covariance Matrices

Journal of Theoretical Probability - Consider the sample covariance matrices of form $$W=n^{-1}C C^{\top }$$ , where C is a $$k\times n$$ matrix with real-valued, independent and identically...     

A luminescent Zn(II)-Containing Complex: Selective Sensing of Cr(VI) Anion and Application Values on Tuberculosis Care Through Increasing the Antibacterial Response of Macrophages

Journal of Fluorescence - A new Zn(II)-bearing metal-organic framework (MOF), namely, {[Zn2(L)2(H2O)]·8H2O·DMF}n (1) has been generated via applying...