双光子J-C模型实现非定域双原子系统量子特性的远程控制

考虑一对纠缠的二能级原子之一与单模腔场发生双光子共振相互作用,经腔QED演化后,对腔场进行光子探测,通过操纵相互作用的时间和光场参数以及初态两纠缠原子的纠缠度,可远程调控腔外原子表现出更强的非经典效应,如原子的偶极压缩;同时使用相同的方法对远程控制的信道-原子间的纠缠演化也进行了控制,从而更有效地实现对原子量子特性的控制.并且发现原子的压缩和原子间的纠缠存在一定的对应关系.     

Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO₂ (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.     

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric

Gd-doped HfO2 has drawn worldwide interest for its interesting features.It is considered to be a suitable material for N-type metal-oxide-semiconductor(MOS)devices due to a negative flatband voltage(Vfb)shift caused by the Gd doping.In this work,an anomalous positive shift was observed when Gd was doped into HfO2.The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors,such as Fermi level pinning(FLP),a dipole at the dielectric/SiO2interface,fixed interfacial charge,and bulk charge,on Vfb.It was found that the FLP and interfacial dipole could make Vfbnegatively shifted,which is in agreement with the conventional dipole theory.The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfbshift.     

Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

A theoretical model of flatband voltage(VFB) of metal/high-k/SiO2/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFBis obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFBof TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results.Furthermore, both positive VFBshift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.     

Analysis of flatband voltage shift of metallhigh-k/Si02/Si stack based on energy band alignment of entire gate stack

A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.