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Epitaxial growth of Ge_(1-x)Sn_x films with x up to 0.14 grown on Ge(00l) at low temperature 下载免费PDF全文
We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge(00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge–Ge, Ge–Sn,Sn–Sn vibrational modes. The Sn–Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films. 相似文献
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如图1,已知轻质弹簧劲度系数为k,物块质量为m,分别处于图中的A,B,C三个位置,0弹簧处于原长时平衡位置为O,当物块m放在弹簧上时平衡I 位置为O',且|OO'|=l1,当用手将物块拉伸至A位置时,系统保持静止,|AO'|=l,求系统处于C位置时的机械能. 相似文献
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研究了独立学院大学物理教学与高中物理教育的现状,分析了当前独立学院大学物理教学中存在的若干问题.并在此基础上提出了对独立学院进行大学物理教学改进的几点新思路. 相似文献
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