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The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively. 相似文献
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Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films 下载免费PDF全文
The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed. 相似文献
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Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics 总被引:1,自引:0,他引:1 下载免费PDF全文
An improved structure of Schottky rectifier,called a trapezoid mesa trench metal-oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS),is proposed and studied by two-dimensional numerical simulations.Both forward and especially better reverse I-V characteristics,including lower leakage current and higher breakdown voltage,are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier.Optimized device parameters corresponding to the requirement for high breakdown voltage are given.With optimized parameters,TM-TMBS attains a breakdown voltage of 186 V,which is 6.3% larger than that of the optimized TMBS,and a leakage current of 4.3×10 6 A/cm 2,which is 26% smaller than that of the optimized TMBS.The relationship between optimized breakdown voltage and some device parameters is studied.Explanations and design rules are given according to this relationship. 相似文献
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Organic semiconducting/ferroelectric blend films attracted much attention due to their elec-trical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc-curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly(methyl metacrylate) (PMMA) was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the con-figuration of three components was also put forward to well understand our experimental observations. 相似文献
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Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height 下载免费PDF全文
This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I--V--T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage Vj, excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, Vj needs to be smaller than the barrier height Ф. With proper scheme of series resistance connection where the condition of Vj > Ф is guaranteed, I--V--T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I--V--T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I--V--T curves only for small barrier height inhomogeneity. 相似文献
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