排序方式: 共有7条查询结果,搜索用时 15 毫秒
1
1.
Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode 下载免费PDF全文
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia. 相似文献
2.
利用动量矩定理推导出带挠性伸展梁航天器的姿态动力学方程,推导了梁质量微元的动力学方程.在梁等速伸展的情况下对动力学方程进行变换,通过Runge-Kutta积分法得出了数值解.结果表明梁等速伸展时,其振动的振幅随其长度的增长而增大;随航天器初始姿态角速率的增大而增大;随伸展速率的增大 相似文献
3.
4.
IntroductionThedynamicandcontrolofcoupledrigid_flexiblesystemisaleading_edgeresearchsubjectthathasdrawnextensiveattentionfromtheacademiccommunityintheworld[1].TheresearchconductedbyKaneetal.in 1 987[2 ]suggestedthat,thetraditionalmodelapplyingstructuraldynamicsassumptionaboutelasticdeformationindiscriminately[3,4 ],ineffect,hasneglectedtheso_called“dynamicstiffening”effectresultedfromcoupledrigid_flexiblesystem .Therefore ,itisofparticularimportancetoresearchtheactionofcoupledrigid_flexibles… 相似文献
5.
以SiCl4H2为气源,用等离子体增强化学气相沉积(PECVD)方法低温快速沉积多晶硅薄膜.实验发现,在多晶硅薄膜的生长过程中,气相空间各种活性基团的相对浓度是影响晶粒大小的重要因素,随功率、H2/SiCl4流量比的减小和反应室气压的增加,晶粒增大.而各种活性基团的相对浓度依赖于PECVD工艺参数,通过工艺参数的改变,分析生长过程中空间各种活性基团相对浓度的变化,指出“气相结晶”过程是晶粒长大的一个重要因素.
关键词:
气相结晶
多晶硅薄膜
晶粒生长
SiCl4 相似文献
6.
据了解,当今社会上青少年中患近视眼疾的不少,特别是在中学生中,出于视力不好,对青年们报考各类学校或参军、参加工作都带来了直接影响。这一情况已引起社会各界的重视。本文想就如何保证可靠照明条件的问题,提供一种近似计算的方法。 相似文献
7.
1