二分法优化计算LED光源相关色温

色温和相关色温是LED光源的重要参量.从原始光谱数据到色品坐标(u,v)再到色温和相关色温的计算过程相当复杂,需要一种优化算法来简化计算量.因此,从色温的色度学定义出发,简要分析了直接内插法、逐点法和甬数曲线拟合法三种色温计算的经典算法,并分别指出了它们的优缺点,在此基础上提出了二分法这种新的色温优化算法.详细介绍了二分法的基本思想、程序流程等.利用软件编程实现这几种算法,通过普朗克黑体辐射公式计算得到一系列色温的理论光谱和白光LED仪器实际测试光谱,对比二分法和各种经典算法的速度和结果,证明了二分法是一种适合于计算机程序化实现的高精度高速度的色温算法.     

交流发光二极管热特性的模拟分析

由于交流发光二极管(AC-LED)在实际应用中无需交流/直流整流变压器,它的发展越来越被关注。随着器件功率的增大,芯片结温升高,对器件的光通量、光功率及寿命等产生负面影响,所以精确掌握AC-LED的温升规律就成为芯片设计的关键。运用FloEFD有限元软件进行模拟仿真1 W白光AC-LED分别在直流和交变功率驱动下的瞬态热特性,结果表明在加载交变信号情况下,器件结温会以直流信号的结温为中心周期振荡,振荡的频率与输入功率频率相同,但有明显的相位移动。同时,AC-LED在不同的输入功率和频率下的结温变化显示稳态时的平均结温和结温振荡幅度都随功率的增大而线性上升,但随着频率的增大而降低。     

Cr掺杂锐钛矿型TiO2（001）薄膜中Cr原子的直接观测

Imaging the doping elements is critical for understanding the photocatalytic activity of doped TiO₂ thin film. But it is still a challenge to characterize the interactions between the dopants and the TiO₂ lattice at the atomic level. Here, we use high angle annular dark-field/annular bright-field scanning transmission electron microscope (HAADF/ABF-STEM) combined with electron energy loss spectroscopy (EELS) to directly image the individual Cr atoms doped in anatase TiO₂(001) thin film from [100] direction. The Cr dopants, which are clearly imaged through the atomic-resolution EELS mappings while can not be seen by HADDF/ABF-STEM, occupy both the substitutional sites of Ti atoms and the interstitial sites of TiO₂ matrix. Most of them preferentially locate at the substitutional sites of Ti atoms. These results provide the direct evidence for the doping structure of Cr-doped A-TiO₂ thin film at the atomic level and also prove the EELS mapping is an excellent technique for characterizing the doped materials.     

合金催化制备氧化锌纳米双晶薄片及其结构表征 (cited: 1)

借助气相输运凝结方法,采用Ag_xAu_1-x合金作为催化剂,在较低的650 oC下成功制备出氧化锌纳米双晶薄片. 高分辨结构表征证实该薄片中存在{10-13}孪晶界面. 系列地对比实验表明高的锌蒸汽浓度和Ag_xAu_1-x合金催化作用是孪晶成核的必要条件. 还发现衬底上制备出的氧化锌纳米孪晶薄片的密度可以通过合金催化剂中的银金成分比例加以调节.     

一种采用锌粉还原制备高电导率的还原石墨烯的绿色﹑柔和的合成方法

报道了一种在室温下,采用锌粉还原氧化石墨烯制备还原石墨烯的简单﹑绿色的合成途径．随着反应时间的变化,由氧化石墨烯被还原到还原石墨烯的过程分别可通过XRD、UV-Vis以及Raman光谱进行表征,同时通过XPS的结果可知石墨烯的碳氧比由原先的1.67增加到13.7,其电导率高达26.900±2.2 kS/m．在厚度大约为20 nm、波长为450～1500 nm时,其透过率超过70%.     

Construction of the Darboux Transformaiton and Solutions to the Modified Nizhnik-Novikov-Veselov Equation

A kind of modified Nizhnik-Novikov-Veselov equation is investigated via the Darboux transformation and some soliton solutions are constructed. The property of excitation is also discussed.     

两步化学气相沉积法制备In2Se3/MoSe2范德华尔斯异质结

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide interest not only for the fundamental research,but also for the application of next generation electronic and optoelectronic devices.Herein,we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In₂Se₃/MoSe₂ heterostructures.Transmission electron microscopy characterization reveals clearly that the In₂Se₃ has well-aligned lattice orientation with the substrate of monolayer MoSe₂.Due to the interaction between the In₂Se₃ and MoSe₂ layers,the heterostructure shows the quenching and red-shift of photoluminescence.Moreover,the current rectification behavior and photovoltaic effect can be observed from the heterostructure,which is attributed to the unique band structure alignment of the heterostructure,and is further confirmed by Kevin probe force microscopy measurement.The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.