首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5篇
  免费   4篇
化学   1篇
综合类   2篇
数学   1篇
物理学   5篇
  2022年   1篇
  2021年   1篇
  2018年   1篇
  2016年   1篇
  2009年   1篇
  2003年   1篇
  1997年   1篇
  1996年   1篇
  1992年   1篇
排序方式: 共有9条查询结果,搜索用时 109 毫秒
1
1.
Li Zhang 《中国物理 B》2022,31(9):98507-098507
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.  相似文献   
2.
敬玉梅  黄少云  吴金雄  彭海琳  徐洪起 《物理学报》2018,67(4):47301-047301
利用聚焦离子束刻蚀技术在拓扑绝缘体Bi_2Se_3薄膜中刻蚀了纳米尺度的反点(antidot)阵列,并对制作的三个器件进行了系统的电学输运测量研究.低温下,所有器件中都观察到明显的弱反局域化效应.通过对弱反局域化效应的分析,发现器件一(Dev-1,不含有antidot阵列)和器件二(Dev-2,含有周期较大的antidot阵列)是始终由一个导电通道主导的量子输运系统,但在器件三(Dev-3,含有周期较小的antidot阵列)中能明确观察到较低温度下存在两个独立的导电通道,而在较高温度下Dev-3表现为由一个导电通道主导的量子输运系统.  相似文献   
3.
Yuanjie Chen 《中国物理 B》2021,30(12):128501-128501
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.  相似文献   
4.
We propose a new approach to rigorously prove the existence of the steady-state degree distribution for the BA network. The approach is based on a vector Markov chain of vertex numbers in the network evolving process. This framework provides a rigorous theoretical basis for the rate equation approach which has been widely applied to many problems in the field of complex networks, e.g., epidemic spreading and dynamic synchronization.  相似文献   
5.
6.
讨论了标题群链中D∞Dn的约化V系数与3-ΓP符号、整条群链的约化V系数与3-jΓP符号,设计了相应的计算机程序并在微机上实现.  相似文献   
7.
详细报道了二硫纶联吡啶过渡金属配合物M(mnt)(bpy),M=Mn(Ⅱ)、Fe(Ⅱ)、Co(Ⅱ)、Ni(Ⅱ)、Cu(Ⅱ)、Zn(Ⅱ)的红外光谱实验数据.对比二硫纶二甲基联吡啶金属配合物M(mnt)(dmbpy)和二硫纶邻菲咯啉金属配合物M(mnt)(phen)的红外光谱,分析了M(mnt)(bpy)的简正坐标,并结合热谱、电子光谱等性质研究了二氰基二硫纶和联吡啶与金属离子的配位方式  相似文献   
8.
基于小波分解的岩石破坏次声信息特征研究   总被引:1,自引:0,他引:1  
次声探测是近年来在自然灾害临灾预警领域兴起的一种新方法,具有广阔的前景。为了研究岩石破坏次声信息特性,在室内试验的基础上采集了砂岩试件破坏前的次声信号,借助小波分析方法对信号的能量特征进行了分析。结果表明:岩石变形破坏次声信号能量主要集中在4~8 Hz的中频带和8~16 Hz的高频带两个频率范围内,中频带能量大于高频带能量,同时在低频带0~4 Hz内也存在一定的能量分布。随着岩石变形破坏程度的增加,次声信号的中低频带能量在相对减少,在岩石临近破坏前,次声信号的中低频带能量与高频带能量的比值接近1。上述特征的发现,为岩石破坏次声信号识别以及破坏前兆预警提供了重要依据。  相似文献   
9.
FCSR序列的线性复杂度   总被引:1,自引:0,他引:1  
§ 1  IntroductionFeedback with carry shift register(FCSR) was first introduced by Klapper andGoresky in1 994[1 ] .The main idea of FCSR is to add a memory to linearfeedback shiftreg-ister(LFSR) .The structure is depicted in Fig.1 ,Fig.1where mn- 1 ∈Z,ai,qi∈ { 0 ,1 } and qr=1 .We refer to mn- 1 as memory,(mn- 1 ,an- 1 ,...,an- r)as state,r=log(q+ 1 ) as length,and q=-1 + q1 · 2 + ...+ qr· 2 ras connection integerof FCSR.The operation of the shiftregister is defined as follows:(1 …  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号