Optical processes of photonic band gap structure with dressing field in atomic system

We experimentally investigate probe transmission signals (PTS), the four-wave mixing photonic band gap signal (FWM BGS), and the fluorescence signal (FLS) in an inverted Y-type four level atomic system. For the first time, we compare the FLS of the two ground-state hyperfine levels of Rb 85. In particular, the second-order and the fourth-order fluorescence signals perform dramatic dressing discrepancies under the two hyperfine levels. Moreover, we find that the dressing field has some dressing effects on three such types of signals. Therefore, we demonstrate that the characteristics of PTS, FWM BGS, and FLS can be controlled by frequency detunings, the powers or phases of the dressing field. Such research could have potential applications in optical diodes, amplifiers, and quantum information processing.     

电场调控双层石墨烯纳米带的电子结构和光学性质

利用基于密度泛函理论的第一性原理方法,研究了外加电场作用下双层AA堆垛的Armchair边缘石墨烯纳米带(BAGNRs)的电子结构和光学性质. BAGNRs具有半导体特性,其带隙随带宽(宽度为4～12个碳原子)的增加而振荡性减小.当施加电场后,BAGNRs的带隙随着电场强度的增加而逐渐减小,带隙越大对电场值的变化越敏感.当电场值为0.5 V/?时,所有BAGNRs的带隙都为零. BAGNRs具有各向异性的光学性质,其介电函数在垂直极化方向为半导体特性,而在平行极化方向为金属特性.在外加电场的作用下,BAGNRs的介电函数、吸收系数、折射系数、反射系数、电子能量损失系数和光电导率,其峰值向低能量区域移动,即产生红移现象.电场增强了能带间的跃迁几率.纳米带宽度对这些光学性质参数具有不同程度的影响.研究结果解释了电场调控BAGNRs光学性质的规律和微观机理.