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1.
负膨胀材料Zn(CN)_2和Cd(CN)_2的晶格振动分析   总被引:2,自引:2,他引:0  
运用群论理论对负膨胀系数材料Zn(CN)2和Cd(CN)2的晶格振动进行了对称性分类,利用第一性原理密度泛函理论计算了它们布里渊区中心点的声子频率和Grüneisen参数,根据计算得到的各个模式所对应的本征矢对各个振动模式进行了指认,根据各模式Grüneisen参数讨论了负膨胀机理。在11个光学振动模式中,一个属于Zn/Cd原子的晶格振动模,位于223 cm-1/154 cm-1;5个属于C≡N刚性单元平移振动模;3个属于C≡N刚性单元天平动;2个属于C≡N刚性单元内振动。有7个振动模为拉曼活性,4个振动模为红外活性,两个振动模红外和拉曼均为非活性。C≡N刚性单元的3个低频平移振动模和全部天平动模的Grüneisen参数为负,对负热膨胀的产生有贡献,振动频率为47 cm-1的平移振动模具有最大的负Grüneisen参数,对负膨胀贡献最大。  相似文献
2.
532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究   总被引:1,自引:0,他引:1  
用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。  相似文献
3.
王俊平  郝跃 《中国物理 B》2006,15(7):1621-1630
In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal layout design exhibit a great variety of shapes. Based on mathematical morphology, a new critical area model is presented, which can be used to estimate the critical area of short circuit, open circuit and pinhole. Based on the new model, the efficient validity check algorithms are explored to extract critical areas of short circuit, open circuit and pinhole from layouts. The results of experiment on an approximate layout of 4 × 4 shifts register show that the new model predicts the critical areas accurately. These results suggest that the proposed model and algorithm could provide new approaches for yield prediction.  相似文献
4.
张晓菊  龚欣  王俊平  郝跃 《中国物理》2006,15(3):631-635
The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity.  相似文献
5.
根据仿生学原理,通过仿造树的结构制作一个树的支架,将太阳能电池板以45°的倾角放在树枝架上,然后通过WS-ALMPPT15控制器和12V/20Ah的铅酸蓄电池、负载(包括直流负载、交流负载)相连。实验测试表明:在产生电力方面,新型树灯在一天内的平均输出功率将比普通的平板太阳能电池板的输出功率输出高出27.3%;此外,新型树灯的输出电压、电流、功率基本上趋于一致,这些都高效地节约了电能。  相似文献
6.
In the integrated circuit manufacturing process, the critical area extraction is a bottleneck to the layout optimization and the integrated circuit yield estimation. In this paper, we study the problem that the missing material defects may result in the open circuit fault. Combining the mathematical morphology theory, we present a new computation model and a novel extraction algorithm for the open critical area based on the net flow-axis. Firstly, we find the net flow-axis for different nets. Then, the net flow-edges based on the net flow-axis are obtained. Finally, we can extract the open critical area by the mathematical morphology. Compared with the existing methods, the nets need not to divide into the horizontal nets and the vertical nets, and the experimental results show that our model and algorithm can accurately extract the size of the open critical area and obtain the location information of the open circuit critical area.  相似文献
7.
刘士钢  王俊平  苏永邦  王乐 《中国物理 B》2012,21(9):98503-098503
For modern processes at deep sub-micron technology nodes, yield design, especially the design at the layout stage is an important way to deal with the problem of manufacturability and yield. In order to reduce the yield loss caused by redundancy material defects, the choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for a short net, which is net-based and reflects the size of the critical area between a single net and the nets around it. Since this model is based on a single net and includes the information of the surrounding nets, the critical area between the single net and surrounding nets can be reduced at the same time. In this way, the efficiency of layout optimization becomes higher. According to experimental observations, this sensitivity model can be used to choose the position for optimization. Compared with the chip-area-based and basic- layout-based sensitivity models, our sensitivity model not only has higher efficiency, but also confirms that choosing the net to be optimized at first improves the design.  相似文献
8.
首次采用高温快速固相烧结的方法合成了Zr1-x Hfx W2O8(x=0, 0.2, 0.3, 0.4, 0.5, 0.6, 1)固溶体。合适的合成条件为: 温度1573~1693 K, 时间10 min~1 h, 该方法使合成时间和能耗比传统固相反应烧结显著降低。Zr1-x Hfx W2O8的晶胞参数与晶胞体积随Hf4+含量的增加而减小。合成的样品晶粒尺寸比常规固相烧结合成样品的颗粒尺寸较小, 颗粒大小在1~10 μm之间。拉曼光谱分析表明, Zr1-xHfxW2O8(0相似文献
9.
The Zr_(0.5)Hf_(0.5)VPO_7 is successfully synthesized by the solid-state method with near-zero thermal expansion. Powder x-ray diffraction(XRD), Raman spectroscopy, thermal dilatometry, and scanning electron microscopy(SEM) are used to investigate the structure, the phase transition, and the coefficient of thermal expansion(CTE) of Zr_(0.5)Hf_(0.5)VPO_7. The investigation results show that the samples are of the single cubic type with a space group of Pa3ˉ at room temperature(RT).It can be inferred that the superstructure is transformed from the 3 × 3 × 3 superstructure to the 1 × 1 × 1 ideal crystal in a temperature range between 310 K and 323 K. The CTE is measured by a dilatometer to be 0.59 × 10~(-6) K~(-1)(310 K–673 K). The values of intrinsic(XRD) and extrinsic(dilatometric) thermal expansion are both near zero. The results show that Zr_(0.5)Hf_(0.5)VPO_7 has near-zero thermal expansion behavior over a wide temperature range.  相似文献
10.
Using density functional theory, the electronic structures, lattice constants, formation energies, and optical properties of Al_xGa_(1-x)N are determined with Al component content x in a range from 0 to 1. As x increases, the lattice constants decrease in e-exponential form, and the band gap increases with a band bending parameter b=0.3954. The N–Al interaction force in the(0001) direction is greater than the N–Ga interaction force, while the N–Al interaction force is less than the N–Ga interaction force in the(10ī0) direction. The formation energies under different Al component content are negative and increase with Al component content increasing. The static dielectric function decreases, the absorption edge has a blue shift, and the energy loss spectrum moves to high energy with the Al component content increasing.  相似文献
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