基于HRTEM和Raman分析定向多壁碳纳米管阵列的生长机理

以二茂铁、二甲苯为前驱体,石英为衬底,在850 oC的管式炉内采用化学气相沉积法制备出了定向碳纳米管阵列. 高分辨透射电子显微镜和拉曼光谱的结果表明：碳纳米管阵列具有良好的定向性和多壁管状结构,石墨化程度高,并且只在表面存在少量单壁碳纳米管.定向多壁碳纳米管阵列的生长模式为“底部”生长模式,即在生长的初期,当催化剂颗粒较小时,析出的碳原子生成了单壁碳纳米管或与其性质类似的多壁碳纳米管(一般层数小于5层);催化剂颗粒逐渐长大后,大量的碳原子析出后生成了普通的多壁碳纳米管,从而形成了单壁碳纳米管只存在于碳纳米管阵列膜表面和多层碳纳米管膜表面与界面的现象.     

Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.     

BeH2薄膜的制备及红外特性

采用蒸发铍原子与非平衡态氢原子反应制备了透明的BeH2薄膜.扫描电子显微镜(SEM)观察到薄膜表面存在微孔洞,红外光谱显示在722 cm-1有一个强烈的吸收峰.采用密度泛函理论(DFT)对BeH2网状结构进行了计算,得到的3个基本振动模式的频率和强度与文献中BeH2粉末的实验数据基本一致,其中弯曲振动的计算频率为747...     

Be薄膜应力的X射线掠入射侧倾法分析

由于铍薄膜极易被X射线穿透, 传统的几何模式下很难获得有效的X射线衍射应力分析结果. 本文采用掠入射侧倾法分析SiO₂基底上Be薄膜残余应力, 相比其他衍射几何方法, 提高了衍射的信噪比, 获得的薄膜应力拟合曲线线形较好. 对Be薄膜的不同晶面分析, 残余应力结果相同, 表明其力学性质各向同性; 利用不同掠入射角下X射线的穿透深度不同, 获得应力在深度方向上的分布; 由薄膜面内不同方向的残余应力相同, 确定薄膜处于等双轴应力状态. 关键词： Be薄膜 X射线衍射 应力     

胸腺嘧啶分子表面增强拉曼光谱的密度泛函理论和从头计算研究

采用量子化学B3LYP(含电子相关效应的杂化密度泛函)方法和HF(Hartree-Fock,哈特利-福克)方法,在6-31+G**(C,H,N,O)/LANL2DZ(Ag)水平上,对TH(Thymine,胸腺嘧啶)分子进行了几何结构优化,计算了TH分子的NRS(normal Raman scattering,常规拉曼散射)光谱和TH与Ag原子以及Ag2团簇吸附的SERS(surface-enhanced Raman scattering,表面增强拉曼散射)光谱,并将两种理论方法计算的结果和实验值进行比较。结果表明:对于NRS光谱,采用DFT方法的计算结果比HF方法的计算结果更符合已有实验值;而对于SERS光谱,采用HF方法的计算结果更好。最后,通过GaussView可视化软件,对TH分子的振动频率进行了更为全面地归属。     

Be靶丸的研制进展及其关键技术北大核心CSCD

可控核聚变反应是科学家用来解决能源缺乏和发展可持续能源的理想途径,为此美国开展了惯性约束聚变(ICF)研究,建设了国家点火装置(NIF),旨在实验室演示核聚变反应,为惯性约束聚变能(IFE)发展指明方向。制靶是NIF点火工程三大主体之一,如何制备满足设计需求的靶丸成为科学家不懈努力的追求目标。详细介绍了NIF工程中主要候选Be靶丸需求背景、研究现状、Be靶优势、靶参数设计要点、靶丸制备技术,以及制靶过程中存在的关键技术问题,为我国Be靶制备及制靶能力建设提供参考信息。     

Determination of the Surface Tension of Liquid Fe77.5Cu13Mo9.5 Ternary Monotectic Alloy

Thermophysical properties of undercooled liquid monotectic alloys are usually difficult to be determined because of the great dittlculty in achieving large undercoolings. We measure the surface tension of liquid Fe77.5 Cu13Mo9.5 monotectic alloy by an electromagnetic oscillating drop method over a wide temperature range from 1577 to 1784 K, including both superheated and undercooled states. A good linear relationship exists between the surface tension and temperature. The surface tension value is 1.588 N/m at the monotectic temperature of 1703K, and its temperature coefficient is -3.7 × 10^-4 Nm^-1 K^-1. Based on the Butler equation, the surface tension is also calculated theoretically. The experimental and calculated results indicate that the effect of the enriched element on droplet surface is much more conspicuous than the other elements to decrease the surface tension.     

去合金化工艺对纳米多孔铜纯度的影响

采用腐蚀去合金化方法制备纳米多孔铜材料。研究了固溶时间、腐蚀时间及腐蚀温度对纳米多孔铜表面形貌及残余Mn含量的影响。研究表明:由于固溶时间的延长，合金成分越来越均匀化，去合金化后所得纳米多孔铜的残余Mn原子分数降低。固溶95 h的前驱体合金，随着腐蚀时间的延长，其残余Mn含量降低不明显；随着温度的升高，其残余Mn原子分数由25 ℃的3.54%降至60℃的1.14%，但是60 ℃腐蚀后的孔隙与丝径尺寸明显粗化，样品易碎。通过调整去合金化参数，实验所制备的纳米多孔铜呈现均匀的海绵状纳米多孔结构，残余Mn原子分数1.23%, 平均丝径尺寸40 nm。