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通过在氧化还原稳定的钙钛矿材料钛铌酸盐的B位晶格中掺杂具有氧化还原活性的锰元素提高固体氧化物电解池复合电极电催化性能.研究发现,锰元素成功取代钛铌酸盐B位的Ti/Nb.掺杂后的样品的离子电导率在800℃下的氧化气氛和还原气氛下的离子电导率分别提高了约1和0.5个数量级.基于掺杂后的钛铌酸盐基复合阴极,氧离子传导型固体氧化物电解池电解水蒸汽的电流效率在有和无还原气体保护下分别提高了25%和30%. 相似文献
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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers 下载免费PDF全文
The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells. 相似文献
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Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells 下载免费PDF全文
InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented. 相似文献
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