Rational Design of Two-Dimensional Magnetic Chromium Borides Based on First-Principles Calculation

Two-dimensional(2D) magnetic materials have been experimentally recognized recently,however,the Curie temperatures(TC) of known 2D systems are quite low.Generally,magnetic systems can be seen as constituent magnetic elements providing spins and the non-magnetic elements providing frameworks to host the magnetic elements.Short bond lengths between the magnetic and non-magnetic elements would be beneficial for strong magnetic interactions and thus high TC.Based on this,we propose to combine the magnetic element Cr and the non-magnetic element boron to design novel 2D magnetic systems.Using our self-developed software package IM2 ODE,we design a series of chromium-boride based 2D magnetic materials.Nine stable magnetic systems are identified.Among them,we find that CrB4-Ⅰ,CrB4-Ⅱ and CrBs-Ⅰ with common structural units [CrB8] are ferromagnetic metals with estimated TC of 270 K,120 K and 110 K,respectively.On the other hand,five CrB3 phases with structural units [Cr2B12] are antiferromagnetic metals.Additionally,we also find one antiferromagnetic semiconductor CrB2-Ⅰ.Our work may open new directions for identifying 2D magnetic systems with high TC.     

First-principles investigation on ideal strength of B2 NiAl and NiTi alloys

For B2 NiAl and NiTi intermetallic compounds, the ideal stress–strain image is lack from the perspective of elastic constants. We use first-principles calculation to investigate the ideal strength and elastic behavior under the tensile and shear loads. The relation between the ideal strength and elastic constants is found. The uniaxial tension of NiAl and NiTi along <001> crystal direction leads to the change from tetragonal path to orthogonal path, which is driven by the vanishing of the shear constant C(66). The shear failure under {110}{111} shear deformation occurring in process of tension may result in a small ideal tensile strength(~ 2 GPa) for NiTi. The unlikeness in the ideal strength of Ni Al and Ni Ti alloys is discussed based on the charge density difference.     

N型TOPCon晶硅太阳能电池光注入退火增效的研究

N型隧穿氧化层钝化接触(Tunnel Oxide Passivating Contacts,TOPCon)太阳能电池完成印刷烧结后,再经过光注入,效率有明显提升,主要表现在V_oc(开路电压)及FF(填充因子)的提升。其机理在于通过温度和光照强度调节费米能级变化,控制H总量及价态来提高钝化性能。钝化膜层的质量、硅基体掺杂浓度、光注入退火时的工艺温度等对光注入退火工艺提升效率有很大影响。实验证明转换效率越低的电池片经过光注入后效率提升幅度越大;转换效率越高的电池片缺陷会更小,经过光注入退火工艺后几乎无增益。另外同心圆在经过光注入退火工艺后会明显消除。本文主要研究温度、光强、基体电阻率、正表面金属接触面积大小、poly-Si(多晶硅)厚度对光注入退火工艺增效的影响。     

《流体力学中的数值/实验室计算机方法》

随着电子计算机技术的发展,通过数值计算的途径解决力学问题的重要性日益显著。在流体力学方面,已形成了“计算流体力学”这门新兴学科;甚至出现了所谓“数值风洞”,可以用数值方法代替风洞试验的若干功能。计算流体力学的发展,除了体现在这方面的新期刊不断创刊之外,1969年首次举行了第1届流体动力学中的数值方法国际会议。随后,分别于1970、1972、1974和和1976年相继举行了第2—5届会议,并出版     

晶体位错尺寸效应的多尺度分析

本文采用准连续介质多尺度方法，分析了面心立方（fcc）晶体铝阶梯孪晶界在不同尺寸情况下（试件尺寸长高比从1：1到8：1）受剪切作用的晶界变形。了解在不同尺寸下，晶界结构位错的成核过程，得到了大试件比值与小试件比值下作用力与应变的关系曲线及不同试件尺寸下应变能的变化曲线。其中随着试件比值的增加，作用力在应变比较小的时候变化情况相似，但当应变达到3％以后，呈现出明显的不同；应变能随试件长高比的增大而减小，各个试件在各自不同的加载阶段，应变能变化趋势同作用力变化趋势相一致。本计算揭示了不同尺寸下阶梯孪晶界在剪切作用下的微观机理，证实其尺寸效应性质。     

层状饱和土Biot固结问题状态空间法

针对饱和多孔介质空间非轴对Biot固结问题，引入状态变量，构造了两组相比独立的状态变量方程，利用Fourier级数和Laplace-Hankel变换，将状态变量方程转换为两组一阶常微分方程组，提出了均质饱和多孔介质空间非轴对称Biot固结问题的传递矩阵，得到以状态变量和传递矩阵乘积的形式表示的均质饱和多孔介质空间非轴对称Biot固结问题的解，利用层间完全接触的条件，可得到N层饱和多孔介质空间非轴对称Biot固结问题的一般解析表达式，文中考虑几种不同的边界条件，分析了两个算例，数值结果表明该方法具有较高的计算精度和良好的计算稳定性。     

沉淀pH值对SAPO-34/CZA复合催化剂物化性质及CO2加氢反应影响

研究了液相沉淀包覆工艺终点pH值对SAPO-34/CZA复合催化剂物化性质和CO2氢还原制低碳烯烃催化性能的影响.借助XRD、SEM、BET、NH3-TPD和CO2-TPD等手段对不同复合催化剂的晶相组成、微观形貌、孔结构及表面酸碱性质进行了分析表征.研究结果表明,沉淀pH值对SAPO-34/CZA复合催化剂物化性质和CO2加氢制低碳烯烃催化性能影响较大.过高或过低的沉淀pH值制得复合催化剂中SAPO-34分子筛结晶度、微孔比表面积及表面碱量均有所下降,呈现以介孔为主的孔结构特征;而当pH值为7时,制得复合催化剂形成了包覆相结构和微-介复合孔结构(微孔比表面积53.1 m2·g-1,介孔比表面积59.8 m2·g-1,总比表面积为112.9 m2·g-1,总孔容0.4 cm3·g-1,平均孔径14.6 nm);在反应温度325℃,还原温度285℃,反应压力3.0 MPa,体积比H2:CO2=3.0,空速3500 mL·g-1·h-1反应条件下,CO2转化率为64.8;,低碳烯烃选择性为49.8;.与pH=9制得催化剂比较,CO2转化率和低碳烯烃选择性分别提高了26.2;和19.2;.     

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of In_xGa_(1-x)As/In_(0.52)Al_(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In_xGa_(1-x)As/In_(0.52)Al_(0.48)As 2DEG channel structures with mobilities as high as 10289 cm~2/V·s(300 K)and42040 cm~2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10~(12)/cm~2and 2.502×10~(12)/cm~2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.     

方差可能无穷的“中度偏离”单位根过程的复合分位数估计

考虑一类"中度偏离"单位根过程,y_t=q_ny_t-1+u_t,其中qn=1+c/(k_n),k_n=o(n),c为一非零常数,{u_t}为随机扰动项序列.在允许扰动项方差无穷的条件下,构造q_n的复合分位数估计,并得到了该估计的渐近分布.最后通过数值模拟,在扰动项服从t(2)分布下,说明了该估计的稳健和有效性.