Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

GaAs纳米线及GaAs/In_xGa_(1-x)As/GaAs纳米线径向异质结构的无催化选区生长的实验研究

利用无催化选区金属有机化学气相沉积(SA-MOCVD)法在GaAs(111)B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构.系统地研究了生长条件对GaAs纳米线生长的影响.实验结果显示,GaAs纳米线的形貌和长度依赖于生长温度、AsH3的分压以及SiO2掩膜表面的圆孔直径.因此可以通过调节以上因素来得到高质量的GaAs纳米线.并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理.微区光致发光谱(μ-PL)表明,GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成,室温(300 K)下它的发光波长为913 nm.这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值.     

A Fully Vectorial Effective Index Method for Accurate Dispersion Calculation of Photonic Crystal Fibres

A fully vectorial effective index method is developed for accurate dispersion calculation of photonic crystal fibres （PCFs）. In order to improve the accuracy of the model, different values for the effective core radius are used when PCFs have different fibre parameters. The accuracy of our approach is demonstrated by comparing our results with other numerical and experimental results reported in literature. It is found that the accuracy of the fully vectorial effective index method is improved and our results agree well with accurate numerical results obtained by other methods as well as the previously reported experimental data.     

A novel design for broadband dispersion compensation microstructure fiber

A novel microstructure fiber (MF) structure is proposed for broadband dispersion compensation. Through manipulating the four air-hole parameters and the pitch, the broad band dispersion compensation MF can be efficiently designed. The newly designed MF could compensate (to within 0.8%) the dispersion of 101 times of its length of standard single mode fiber over the entire 100-nm band centered on 1550 nm. The proposed design has been simulated through the finite difference beam propagation method, and the corresponding design procedures are also presented.     

半导体薄膜材料外延生长的蒙特卡罗模拟

半导体自组织生长量子点是一种新型半导体材料,它在纳米电子学、光电子学和生命科学中有广泛的应用前景,本文讨论了计算机模拟量子点的生长在材料设计中的重要意义,建立动力学蒙特卡罗二维模型,通过获得的原子沉积的表面图样和对原子簇大小分布的数学统计,得到提高生长温度或者降低沉积速率等量子点外延生长的优化条件。     

基于光子晶体光纤中的自相位调制的全光再生

利用高非线性光子晶体光纤中的自相位调制效应产生的超连续谱,理论上推导了超窄脉冲信号的再生机制。分别从频域和时域上形象的解释了脉冲再生的原理,该本再生方法可以适用于OTDM的信号再生。实验上对劣化了的脉冲宽度为1.7ps的携带信息的超窄脉冲信号进行了再生,再生之后的信号峰值均衡,消光比达到了15dB。再生前信号中心波长是1548.2nm,重复频率是9.96872GHz。实验中,在1554nm—1570nm和1530nm—1543nm范围内都可以得到10dB以上的再生质量。同时拟合了信号峰值功率和波长关系,得到的曲线和超连续谱曲线相吻合。     

耦合微环谐振腔光波导有限尺寸效应的优化

对耦合微环谐振腔光波导中的有限尺寸效应进行了研究.在CMROW两端引入抗反射结构,采用数值方法对抗反射中的三个交叉耦合系数进行了优化,消除了透射谱和群时延谱的有限尺寸效应.数值计算得到了弱耦合和强耦合情况下抗反射结构中优化交叉耦合系数的拟合公式,可以直接计算出消除有限尺寸效应时所需的优化参量.     

横向外延过生长磷化铟材料的生长速率模型

分别考虑气相扩散和掩膜表面扩散过程，建立了金属有机化学气相沉积条件下横向外延过生长的速率模型. 在砷化镓衬底上外延磷化铟条件下，模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系. 通过讨论掩膜/窗口宽度的影响，说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素. 以上结论与实验结果一致. 关键词： 横向外延 生长模型 扩散 生长速率     

光探测器偏压调制技术的理论研究

为了简化和改善光载无线通信系统,提出了一种光探测器偏压调制技术,利用PIN光探测器(PIN-PD)和单行载流子光探测器(UTC-PD)的输出光电流随偏压变化的特性进行调制.采用光探测器偏置调制技术,光电探测和调制可以在一个光探测器上同时实现.研究表明当入射光功率为2.93dBm时,PIN-PD在10GHz射频副载波上的调制带宽为800 MHz,UTC-PD在150GHz射频副载波上的调制带宽为18.75GHz.调制带宽随入射光功率的增大而增大,当入射光功率为12.93dBm时,UTC-PD在150GHz射频副载波上的调制带宽可达25GHz.调制深度与正弦偏压调制信号的最小值有关.