Substrate tuned reconstructed polymerization of naphthalocyanine on Ag(110)

The linkage structures between monomers make great influence on the properties of polymers.The synthesis of some special linkage structures can be challenging,which is often overcome by employing special reaction conditions.Here,we build dihydropentalene linkage in poly-naphthalocyanine on Ag(110)surface.Scanning tunneling microscopy(STM)and non-contact atomic force microscopy(nc-AFM)measurements confirm the dihydropentalene linkage structure and a possible formation path with reconstruction steps is proposed.The controlled experiment on Ag(100)surface shows no dihydropentalene structures formed,which indicates the grooved substrate is necessary for the reconstruction.This work provides insights into the surface restricted reactions that can yield special structures in organic polymers.     

硅烯和锗烯的生长及其机制研究

正硅烯和锗烯分别是由硅原子和锗原子组成的具有类似石墨烯结构的二维材料。与组成石墨烯的sp~2杂化的碳原子不同,硅原子和锗原子在能量上更倾向于sp~3杂化,这是一种三维的共价键构型,所以在自然界中不存在类似石墨那样的层状结构的块体硅和锗,因此也不可能像剥离石墨烯那样从块体中得到硅烯和锗烯单层。这两种材料的生长需要使用单层可控的沉积技术,并选择合适的基底,从而使硅和锗倾向于二维平面生长而     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

Electroless nickel plating on optical fiber probe

As a component of near-field scanning optical microscope （NSOM）, optical fiber probe is an important factor influncing the equipment resolution. Electroless nickel plating is introduced to metallize the optical fiber probe. The optical fibers are etched by 40% HF with Turner etching method. Through pretreatment, the optical fiber probe is coated with Ni-P film by electroless plating in a constant temperature water tank. Atomic absorption spectrometry （AAS）, scanning electron microscopy （SEM）, and energy dispersive X-ray spectrometry （EDXS） are carried out to characterize the deposition on fiber probe. We have reproducibly fabricated two kinds of fiber probes with a Ni-P film： aperture probe and apertureless probe. In addition, reductive particle transportation on the surface of fiber probe is proposed to explain the cause of these probes.     

以对苯二甲酸为手臂连接剂的大肠杆菌DNA传感器

将空心球状CdS超声分散于聚乙烯醇(PVA)溶液中, 得到均匀的CdS-PVA复合材料分散液. 取适量分散液滴涂于玻碳电极表面, 晾干得到CdS-PVA修饰电极. 以对苯二甲酸为手臂连接剂, 在CdS-PVA膜上共价固定大肠杆菌特定寡聚核苷酸序列, 构建了一种新型的DNA传感器. 采用电化学阻抗法考察了该传感器的分析性能, 结果表明该传感器能有效区分互补序列、 单碱基错配序列、 三碱基错配序列和完全错配序列, 可在1.0×10^-12～1.0×10^-7 mol/L范围内对大肠杆菌目标序列进行定量分析, 检出限为1.3×10^-13 mol/L. 将该传感器应用于大肠杆菌实际样品的检测, 结果令人满意.     

Charge density wave states in phase-engineered monolayer VTe2

Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.     

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru（O001） and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru（O001） and on Ir（l I 1）, have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.     

线性抛物Volterra差分方程的全局吸引性

In this paper，by constructing Liapunov Sequences，we study the golbal attractivity of linear Parabolic volterra difference equations of neutral type and obtain some sufficient conditions for the global attractivity of the zero solution of above equations．     

棒状Sb2S3-nafion纳米复合膜修饰玻碳电极的大肠杆菌DNA传感器

将棒状Sb2S3纳米粒子与Nafion聚合物在乙醇溶液中超声混合得到均匀的Sb2S3-Nafion纳米复合材料分散液。将该复合材料滴涂至玻碳电极(GCE)表面,得到稳定的Sb2S3-Nafion修饰电极。循环伏安和阻抗表征实验表明,由于Sb2S3的纳米尺寸效应及半导体效应,电极的电化学性能得到了极大的提高。采用PCl5为活化剂,将Nafion表面的磺酸基团酰氯化,再利用共价键合法将末端修饰氨基的大肠杆菌DNA特征序列固定到修饰电极表面,制备了一种新型的DNA电化学传感器。以亚甲基蓝(MB)为杂交指示剂,将制备的DNA电化学传感器应用于大肠杆菌基因目标序列检测,结果表明,该传感器对目标DNA具有较宽的动力学线性范围(1.0×10-12～1.0×10-7mol/L),检出限达到2.4×10-13mol/L。此外,选择性实验表明该传感器对互补序列、单碱基错配序列、三碱基错配序列和完全错配序列具有良好的识别能力。     

一种测定S2–的金纳米棒非聚集比色探针

基于S2-对金纳米棒(AuNRs)纵横轴溶出速度的差异性所引起的红移量(△λ)和颜色变化,开发了AuNRs溶出比色探针.探针线性范围(10～ 10000.0 μmol/L)宽、灵敏度高(检出限为7.9 μmol/L)、选择性好,用于实际样品中S2-含量的测定和人体疾病诊断,其结果与亚甲基蓝法相吻合.此外,探讨了探针测定S2-的反应机理.