Cd0.96Zn0.04Te光致载流子动力学特性的太赫兹光谱研究

采用光抽运-太赫兹探测技术研究Cd_0.96Zn_0.04Te的载流子弛豫和瞬:态电导率特性.在中心波长800 nm的飞秒抽运光激发下,Cd_0.96Zn_0.04Te的载流子弛豫过程用单指数函数进行了拟合,其载流子弛豫时间长达几个纳秒,且在一定光激发载流子浓度范围内随光激发载流子浓度的增大而减小,这与电子-空穴对的辐射复合有关.在低.光激发载流子浓度(4.51×10¹⁶—1.81×10¹⁷ cm^-3)下,Cd_0.96Zn_0.04Te的太赫兹(terahertz,THz)瞬态透射变化率不随光激发载流子浓度增大而变化,主要是由于陷阱填充效应造成的载流子损失与光激发新增的载流子数量近似.随着光激发载流子浓度继续增大(1.81×10¹⁷—1.44×10¹⁸ cm^-3),THz瞬态透射变化率随光激发载流子浓度的增大而线性增大,是由于缺陷逐渐被...     

Temperature-Dependent Dielectric Characterization of Magneto-Optical Tb_3Sc_2Al_3O_(12) Crystal Investigated by Terahertz Time-Domain Spectroscopy

Terbium scandium aluminum garnet(TSAG) crystals have been widely used in magneto-optical systems. We investigate the complex refractive index of the TSAG crystal in the terahertz frequency range using terahertz(THz) time-domain spectroscopy in the temperature range 100–300 K. It is observed that the refractive index and the absorption coefficient increase with the THz frequency. The refractive index increases with the temperature.We measure the temperature coefficient of the refractive index of the TSAG crystal in the frequency range 0.4–1.4 THz. Furthermore, the loss tangent, i.e., the ratio of experimental values of the imaginary and real part of the dielectric permittivity, is found to be almost independent of frequency. TSAG is very promising for applications in THz optoelectronics because it has a high dielectric constant, low loss, and low thermal coefficient of the dielectric constant.     

C,igahertz longitudinal acoustic phonons originating from ultrafast ligand field transitions in hematite thin films

The creation and propagation of longitudinal acoustic phonons （LAPs） in high quality hematite thin films （α-Fe203） epitaxially grown on different substrates （BaTiO3, SrTiO3, and LaAlO3） are investigated using the femtosecond pump- probe technique. Transient reflection measurements （AR/R） indicate the photo-excited electron dynamics, and the initial decay less than 1 ps and the slow decay of -500 ps are attributed to the electron-LO phonon coupling and electron-hole nonradiative recombination, respectively. LAPs in α-Fe2O3 film can be created by ultrafast excitation of the ligand field state, such as the ligand field transitions under 800-nm excitation as well as the ligand to metal charge-transfer with 400- nm excitation. The strain modulations of the sound velocity and the out-of-plane elastic properties are demonstrated in α-Fe2O3 film on different substrates.     

双缺陷模一维光子晶体的双光子吸收增强研究

采用真空镀膜工艺制备了具有762 nm和800 nm双缺陷模的含两个CdS缺陷层的TiO2/SiO2一维光子晶体,运用抽运探测技术测量了其双光子吸收。对于两个缺陷模,双光子吸收均得到很大的增强,其中缺陷模为800nm时的双光子吸收系数307 cm/GW要大于缺陷模为762 nm时的116 cm/GW,分别为单层CdS薄膜的48倍和18倍。这种双光子吸收的增强是由于光局域化导致一维光子晶体缺陷层内的电场强度增大而形成的。通过传输矩阵法计算了一维光子晶体的内部场强,发现800 nm波长光入射时缺陷层内的电场强度要大于762 nm波长光入射时的电场强度值。     

单光束飞秒激光诱导的电子态密度分布对双周期纳米光栅的影响EI北大核心CSCD

研究了不同脉冲能量下1kHz飞秒激光脉冲在石英玻璃内部诱导的损伤痕迹、纳米光栅结构及其双折射特性,发现在激光辐照区域顶端形成的微纳结构具有两种周期性:沿光传输方向的周期为ΛK;沿激光偏振方向的周期为ΛE.通过数值模拟飞秒脉冲在石英玻璃内部的传输过程,研究了入射能流密度分布及自由电子密度分布对双周期纳米光栅结构的影响.结果表明,较大的入射能流密度有利于纳米光栅的形成,且产生的电子密度会影响周期ΛK,电子密度越大,周期ΛK越大.从理论上分析了双周期纳米光栅结构的形成过程,认为等离子体非对称生长及其引起的局域场强分布影响了双周期纳米光栅结构的形成.     

掺杂CdS超微粒的ZrO2薄膜的光学性质

研究了用溶胶凝胶方法制备的CdS超微粒 ZrO2 薄膜的发光特性 ,测量了不同退火温度处理的样品的荧光光谱、荧光激发光谱和荧光衰减曲线的变化 ,通过荧光衰减曲线研究了 14 0 ps左右的CdS的带间跃迁发射和较慢的表面态发射。还测量了这种掺有CdS超微粒的ZrO2 薄膜的飞秒光克尔效应 ,得到三阶非线性光学极化率为4 4× 10 - 1 1 esu和大约 10 0fs的响应时间。结果表明 ,这类材料具有较大的光学非线性和快速的响应时间 ,在高速光开关等方面有潜在的应用前景     

用一维光子带隙结构增强硫化镉双光子吸收研究

用真空镀膜方法制备了含有单个CdS缺陷层的具有不同周期和结构参量的TiO2／SiO2一维光子晶体。用抽运一探测技术研究了CdS缺陷层的双光子吸收（TPA）现象。实验结果表明：一维光子晶体中CdS缺陷层的双光子吸收显著增强。不同周期和结构参量的一维光子晶体中CdS缺陷层的双光子吸收系数不同。双光子吸收的增强来源于由光局域化导致的缺陷层的电场强度的增加。缺陷层电场强度与一维光子晶体的结构有关,如周期,光子带隙的位置与宽度及缺陷模式等因素都会影响缺陷层电场强度。采用四分之一波长的高低折射率介质层和与入射波长匹配的缺陷模可以得到最大的缺陷层电场强度。     

Au:TiO2和Au:Al2O3纳米颗粒复合膜的线性和非线性光学特性

主要从实验和理论两个方面,探讨了不同Au颗粒尺寸和不同基质对Au：TiO₂和Au：Al₂O₃复合膜线性和非线性光学性质的影响.用吸收光谱研究了Au颗粒尺寸和基质与Au复合膜表面等离子体共振带之间的关系;用皮秒Z扫描技术研究了共振和非共振情况下(激发光波长分别为532nm和1064nm),Au颗粒尺寸和基质与复合膜三阶非线性极化率的关系.基于表面等离子体共振理论和局域场增强理论对复合膜进行了分析,得到了不同Au颗粒大小和不同基质时Au复合膜的 关键词： 金属纳米颗粒 复合膜 三阶非线性 表面等离子体共振     

掺钼ZnO透明导电薄膜的太赫兹电磁波传输性质

采用直流磁控反应溅射方法,通过调节氧分压在玻璃基底上制备了不同载流子浓度的掺Mo的ZnO（ZMO）透明导电薄膜.应用太赫兹电磁波时域光谱技术研究了ZMO导电膜的太赫兹电磁波透射性质及介电响应,得到了与频率相关的电导率、能量吸收和薄膜折射率,实验结果与经典Drude模型相符很好.ZMO导电膜的太赫兹电磁波脉冲透射性质表明,通过调节ZMO薄膜的载流子浓度,该导电膜可作为应用于衬底和光学器件等太赫兹电磁波频率范围的宽带抗反射涂层. 关键词： 太赫兹电磁波光谱 薄膜电导率 宽带抗反射 透明导电薄膜     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.