Degradation behaviors of high power GaN-based blue light emitting diodes

The degradation mechanism of high power InGaN/GaN blue light emitting diodes(LEDs)is investigated in this paper.The LED samples were stressed at room temperature under 350-mA injection current for about 400 h.The light output power of the LEDs decreased by 35%during the first 100 h and then remained almost unchanged,and the reverse current at 5 V increased from 10 9A to 10 7A during the aging process.The power law,whose meaning was re-illustrated by the improved rate equation,was used to analyze the light output power-injection current(L–I)curves.The analysis results indicate that nonradiative recombination,Auger recombination,and the third-order term of carriers overflow increase during the aging process,all of which may be important reasons for the degradation of LEDs.Besides,simulating L–I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism,because they change slightly when the LED is stressed.     

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours’ current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.     

基于Matlab的α粒子的散射实验模拟

Matlab是一种具有强大的矩阵运算能力和绘图功能的科学计算软件.利用Matlab的计算、绘图和GUI功能可以对α粒子散射实验进行可控模拟,得出不同初始条件下的α粒子散射图像,有利于直观方便地对α粒子散射进行研究.     

二维层状材料FePSe3的高压物性

FePSe₃在高压下会出现半导体到金属的转变、超导电性以及高自旋到低自旋的转变等多种有趣的物理现象，但目前对其在高压下的晶体结构分析仍以理论研究为主，结构的不确定阻碍了对其物理性质的深入研究。为此，利用金刚石对顶砧结合高压拉曼光谱、高压同步辐射X射线衍射以及高压电输运测量，对FePSe₃在高压下的行为进行了研究。结果表明，FePSe₃在低于60.0 GPa的压力范围内经历了3次结构相变，完成了LP—HP1—HP2—HP3的转变。首次在实验上观测到FePSe₃的高压新相HP2和HP3，并给出其可能的空间对称群。HP2相和HP3相具有超导电性，超导温度随压力的升高而降低，致使超导相图呈现“穹顶”状。研究结果为进一步厘清FePSe₃的压致相变行为提供了重要的实验支撑。