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SiC1-xGex/SiC 异质结光电二极管特性的研究 总被引:5,自引:5,他引:0
使用二维器件模拟软件Medici, 对SiC1-xGex/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC1-xGex层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm2的条件下, p-n+ SiC0.8Ge0.2/SiC和p-n+ SiC0.7Ge0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10-7 A/μm和7.438×10-7 A/μm; 为了进一步提高SiC1-xGex/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC0.8Ge0.2/SiC和p-i-n SiC0.7Ge0.3/SiC的光电流分别达到1.6734×10-6 A/μm和1.844×10-6 A/μm. 相似文献
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The development of an implantable five channel microelectrode array is presented for neural signal recordings. The detailed fabrication process is outlined with four masks used. The SEM images show that the probe shank is 1.2mm long, 100μm wide and 30μm thick with the recording sites spaced 200μm apart for good signal isolation. The plot of the single recording site impedance versus frequency is shown by test in vitro and the impedance declines with the increasing frequency. Experiment in vivo using this probe is under way. 相似文献
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Silicon-based microelectrodes have been confirmed to be helpful in
neural prostheses. The fabricated 7-channel silicon-based
microelectrode was feasible to be implanted into the brain cortex.
The manufacturing process by micro-electromechanical system (MEMS)
technology was detailed with four photolithographic masks. The
microscopic photographs and SEM images indicated that the probe
shank was 3mm long, 100\mum wide and 20\mu m thick with
the recording sites spaced 120\mu m apart for good signal
isolation. To facilitate the insertion and minimize the trauma, the
microelectrode is narrowed down gradually near the tip with the tip
taper angle of 6 degrees. Curve of the single recording site
impedance versus frequency was shown by test in vitro and the
impedance declined from 150.5k\Omega to 6.0k\Omega with
frequency changing from 10\,k to 10MHz. 相似文献
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