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1.
Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model 下载免费PDF全文
In this paper,we present an investigation of type-II ’W’ quantum wells for the InAs/Ga 1 x In x Sb/AlSb family,where ’W’ denotes the conduction profile of the material.We focus our attention on using the eight-band k · p model to calculate the band structures within the framework of finite element method.For the sake of clarity,the simulation in this paper is simplified and based on only one period-AlSb/InAs/Ga 1 x In x Sb/InAs/AlSb.The obtained numerical results include the energy levels and wavefunctions of carriers.We discuss the variations of the electronic properties by changing several important parameters,such as the thickness of either InAs or Ga 1 x In x Sb layer and the alloy composition in Ga 1 x In x Sb separately.In the last part,in order to compare the eight-band k · p model,we recalculate the conduction bands of the ’W’ structure using the one-band k · p model and then discuss the difference between the two results,showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure.The in-plane energy dispersions,which illustrate the suppression of the Auger recombination process,are also obtained. 相似文献
2.
对p型掺杂13 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为175 cm-1,与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂13 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义.
关键词:
最大模式增益
p型掺杂
InAs/GaAs量子点激光器 相似文献
3.
采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原
关键词:
电压调制
同时响应
量子阱红外探测器
双波段 相似文献
4.
Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (PR) mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (SWCGs) to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%. 相似文献
5.
Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 下载免费PDF全文
This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances. 相似文献
6.
瑞典皇家科学院2000年10月10日宣布,将2000年度诺贝尔物理奖授予三位科学家,他们是俄罗斯科学院圣彼得的堡约飞技术物理研究所的Zh.Alferpv、美国加利福尼亚大学的Herbert Kroemer和美国德克萨斯仪器公司的Jack S.Kilby,以表彰他们为现代信息技术,特别是他们发明的高速晶体管、激光二极管和集成电路(芯片)所作出的奠基性贡献,Kilby由于发明并发展了集成电路技术而获奖,通过这项发明,微电子学成为所有现代技术的基础,Kilby的获奖成果已有另文(见2001年第3期《物理》)述评,Alferov和Kroemer则是由于他们在半导体异质结及其在电子和光电子学中的应用方面的突出贡献而获奖,该不仅就两位诺贝尔物理奖得主在异质结及其在光电子中的应用方面的贡献进行评述。 相似文献
7.
Design of Two-Dimensional Photonic Crystal Edge Emitting Laser for Photonic Integrated Circuits 下载免费PDF全文
An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benefits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(λ/nslab)^3 for oscillation mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300. 相似文献
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9.
针对大功率半导体激光器面临的主要困难,提出并实现了一种隧道再生多有源区耦合大光腔 高效大功率半导体激光器机理.该机理能有效地解决光功率密度过高引起的端面灾变性毁坏 、热烧毁和光束质量差等大功率激光器存在的主要问题.采用低压金属有机化合物气相淀积 方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/InGaAs 应变量子阱有源区和新型多有 源区半导体激光器外延结构,并制备了高性能大功率980nm激光器件.三有源区激光器外微分 量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W.
关键词:
半导体激光器
大功率
金属有机化合物气相沉积 相似文献
10.
Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters 下载免费PDF全文
An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters.Employing the semivectorial finite difference method,the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically.After carefully design,a particular asymmetric laser structure is proposed.Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure.The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure. 相似文献