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以咔唑为电子供体,苯并噻唑为电子受体,合成了两种新型咔唑-苯并噻唑衍生物3-(2-苯并噻唑-2-基乙烯基)-N-乙基咔唑和3,6-二(2-苯并噻唑-2-基乙烯基)-N-乙基咔唑,通过核磁共振和分光光度计对其结构进行表征.利用刮刀法制备质量分数为4%的衍生物/聚酰亚胺的复合薄膜.采用透射光谱法和单光束Z-扫描技术分别测试了衍生物的线性和三阶非线性光学特性.Z扫描实验结果表明3-(2-苯并噻唑-2-基乙烯基)-N-乙基咔唑薄膜的非线性吸收系数和非线性折射系数分别为β1=-2.118 9×10-10 cm/W、r1=2.285 2×10-14 cm2/W,具有反饱和吸收特性和自聚焦效应;同时3,6-二(2-苯并噻唑-2-基乙烯基)-N-乙基咔唑薄膜的非线性吸收系数与非线性折射系数分别为β2=-1.275 6×10-9 cm/W、r2=-7.039 9×10-14 cm2/W,具有反饱和吸收特性和自散焦效应. 相似文献
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报道了一种利用偏振控制器(PC)和保偏光纤(PMF)组成的高双折射Sagnac干涉环实现选频和调谐的环形腔掺铒光纤激光器.理论模拟了PMF和PC对波长的控制作用.实验中调节PC得到了单波长、双波长和多波长激光;并验证了滤波间隔随PMF长度的变化规律.实验中得到了斜率效率20%,3 dB线宽0.016 nm,30 dB线宽0.097 nm,边模抑制比(SMSR)40 dB左右的稳定激光输出.
关键词:
光纤激光器
Sagnac干涉环
环形腔
掺铒光纤 相似文献
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激光具有优良的相干性和单色性。因此,它的出现也促使光谱学和光谱分析技术发展到一个新的水平。国产大功率A_(?)~+激光器,在功率和单色性方面可与进口产品媲美。但是在输出功率稳定性方面,远不能满足精密分析的要求。我们为了解决国产光源与进口Brillouin散射 相似文献
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对利用零级抑制均匀相位掩模版结合同透镜制作啁啾光纤光栅的技术进行了详细的理论和实验研究。结果表明这种方法适合于制作啁啾参数较小的光纤光栅,当所制作的光栅啁啾参数较大时,将导致严重的光谱不对称性和包层模耦合。 相似文献
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Tunable microwave signal generation based on an Opto-DMD processor and a photonic crystal fiber 下载免费PDF全文
Frequency-tunable microwave signal generation is proposed and experimentally demonstrated with a dual-wavelength single-longitudinal-mode (SLM) erbium-doped fiber ring laser based on a digital Opto-DMD processor and four-wave mixing (FWM) in a high-nonlinear photonic crystal fiber (PCF). The high-nonlinear PCF is employed for the generation of the FWM to obtain stable and uniform dual-wavelength oscillation. Two different short passive sub-ring cavities in the main ring cavity serve as mode filters to make SLM lasing. The two lasing wavelengths are electronically selected by loading different gratings on the Opto-DMD processor controlled with a computer. The wavelength spacing can be smartly adjusted from 0.165 nm to 1.08 nm within a tuning accuracy of 0.055 nm. Two microwave signals at 17.23 GHz and 27.47 GHz are achieved. The stability of the microwave signal is discussed. The system has the ability to generate a 137.36-GHz photonic millimeter signal at room temperature. 相似文献
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Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED 下载免费PDF全文
GaN-based irregular multiple quantum well(IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes(LEDs) are optimized in order to obtain near white light emissions.The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect through employing a newly developed theoretical model from the k · p theory.Several structure parameters such as well material component,well width,layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure.Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two,the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness.The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level. 相似文献
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Design of Phosphor-Free Single-Chip White Light-Emitting Diodes Using InAlGaN Irregular Multiple Quantum Well Structures 下载免费PDF全文
A novel approach for the design of phosphor-free single-chip white light-emitting diodes (LEDs) is proposed by employing InAIGaN irregular multiple quantum well (IMQW) structures. The electronic and optical properties of the designed InA1GaN IMQWs are analyzed in detail by fully considering the effects of strain, well-coupling, valence band-mixing, and quasi-bound states using the effective-mass Hamiltonian deduced from k. p theory. For comparison, three different types of InAIGaN IMQW structures with ultra-wide band spontaneous emission spectra are analyzed, and the results show that phosphor-free single-chip white light LEDs with more than 20Ohm emission band can be obtained using properly designed InAIGaN IMQW structures. 相似文献
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