反向区逐步逼近调节平衡法调节QJ-23型箱式单臂电桥

介绍一种能使电桥迅速平衡的方法.     

141Pr+波长56908 nm谱线超精细结构测量

利用共线快离子束-激光高分辨光谱学测量了141Pr+波长为56908nm谱线的超精细结构光谱，由此得到超精细相互作用常数和参与跃迁激发态、亚稳态能级的超精细能级分裂-与已有的数据比较，在实验误差范围内一致，但测量精度提高了一个数量级- 关键词： 超精细结构 快离子束-激光光谱学 磁偶极矩和电四极矩超精细作用常数     

激光二极管泵浦Nd：FAP激光器

报道激光二极管泵浦的掺钕氟磷酸钙固体激光器，该器件在重复频率为１００Ｈｚ的准连续状态下运行，当耦合输出透过率为８％时，得到３１％的斜效率，比较了ＦＡＰ和ＹＡＧ这两种介质的激光器的性能，理论分析得出的两者的阈值泵浦功率的相对值与实验结果相一致，并证实ＦＡＰ是一种有前途的适合激光二极管泵浦的激光介质。     

2,2,2-三氯乙基·甲基醚的红外和Raman光谱及其振动归属

本文给出了2,2,2-三氯乙基·甲基醚的红外(3500-40cm^-1)和Raman(3500-50'^-1)光谱以及液相Raman谱退偏比的首次实验数据。利用修正价力场的正则坐标计算完成了两种构型的正则模式和势能分布的计算,从而做出频率的振动归属。由红外谱线606(反式)和573cm^-1(旁式)相对强随温度变化的关系求出平均热函差为161±11cm^-1(1922±134J/mol),证明两种构型中反式较旁式稳定。     

采用接口结构的掺钕单模光纤激光器

稀士元素掺杂单模光纤激光器是一种新颖的有源光纤器件.因其可与常规单模光纤、无源光纤器件(如耦合器、偏振器、滤波器和调制器等)等直接连接,使光源与光纤系统间的耦合损耗减至最小,又可实现全光纤网络.另外,它还可以满足某些光纤传感器在光源性能方面的特殊要求.因此,近年来国内外对这一有源光纤器件的研究工作方兴未艾.本文报道掺钕单模光纤的基础性研究.实验 实验中采用国产掺钕单膜光纤,钦的掺杂浓度为4OOppm,芯径为5.0μm,光纤长度     

Superjunction nanoscale partially narrow mesa IGBT towards superior performance

We present a detailed study of a superjunction(SJ) nanoscale partially narrow mesa(PNM) insulated gate bipolar transistor(IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage(V_(ce(sat))) and low turn-off loss(E_(off)) while maintaining other device parameters. Compared with the conventional 1.2 k V trench IGBT, our simulation result shows that the V_(ce(sat))of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 k V IGBT. Meanwhile, the fall time decreases from109.7 ns to 12 ns and the E off is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between V_(ce(sat))and E_(off) is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering(CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique.Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.     

基于模型迁移学习的木材导热系数预测

木材导热系数对木结构建筑能耗精准预测具有重要意义,然而目前文献中的模型难以提供全面而准确的预测工具,且一些机器学习模型所考虑的因素和样本数有限。本文构建1941年至今含多种特征的导热系数数据库,并开发对比神经网络和迁移学习模型的预测精度。结果表明,结合迁移学习后,导热系数预测精度可提升23%以上,且迁移学习性能在0～0.3 W·m-1·K-1上精度提升明显,更适合于木结构等传热应用中。本文通过创新的模型参数微调迁移策略能为小样本、含大量缺失值的数据集和简单网络结构的导热系数预测提供思路。     

飞秒激光诱导TiO2金红石相变的激光显微拉曼光谱研究

利用激光显微拉曼光谱仪研究了近红外飞秒激光脉冲诱导TiO2金红石晶体所引起的相变.实验发现当激光的脉冲功率为1.0μJ/脉冲时,随着飞秒激光辐照脉冲数的增加,金红石相的Eg模式强度增强,而A1g模式强度减弱,飞秒激光的非线性效应在晶体内部诱导产生了色心;当激光辐照脉冲数为2.5×106时,锐钛矿石相出现;随着激光辐照脉冲数的增加,锐钛矿相的拉曼振动模式强度增强,金红石相的拉曼振动模式强度减弱.     

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

A novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times (SCWTs) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWTs of the proposed structure are increased by 60% and 41.2% in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga's FOM ($BV^{2}/R_{\rm on}$) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga's FOM.     

X射线的电离剂量率测量实验

结合Leybold教具公司生产的X射线装置通过测量平行板电容间的X射线电离离子剂量率使学生了解气体探测器的测量原理，继而了解X射线电离离子剂量率与管高压和管发射电流的关系．