掩埋式多模干涉型分束器的反射性能

通过束传播方法(BPM)模拟了SiO2基掩埋式波导结构多模干涉(MMI)型分束器的反射性能,模拟结果表明,MMI工作在分束模式时存在最优的多模干涉长度实现最大输出和最小反射,而在合束模式下实现最大输出时反射也达到最大,这是由自映象原理决定的。SiO2基掩埋式波导结构MMI分束器对反射具有良好的抑制作用,其最大反射功率为-60dB。分析表明,多模干涉区末端的界面反射率决定了器件的反射强弱,SiO2基掩埋式波导的界面反射率非常低,这是其低反射的原因。     

16×0.8nm硅基二氧化硅阵列波导光栅设计

给出了更为合理的阵列波导光栅(AWG)的设计原则。在设计时兼顾了输出谱的非均匀性Lu和输出通道数N的要求,克服了设计中可能引起通道数N丢失和不考虑输出谱非均匀性Lu的缺点。用该方法设计了折射率差为0 75%和16×0 8nm的硅基二氧化硅AWG。采用广角有限差分束传播方法(FD BPM)对所设计的AWG进行了输出谱的模拟,得到了插损为 1.5dB、串扰为 48dB、通道非均匀性约为1dB的AWG,设计指标达到了商用要求。     

Mach-Zehnder Interferometer Based on Coupled Dielectric Pillars

We propose a Mach-Zehnder interferometer （MZI） based on coupled dielectric pillars. It is composed of single-row pillar coupled waveguide modulating arms and three-row pillar waveguide 3 dB couplers. The slow light property and transmission loss of the single-row pillar modulating arm are optimized by the plane wave expansion method. A short 3dB coupler is designed based on the modes transformation in three-row pillar waveguide. Finite difference time domain simulations prove the validity of this MZI and show that it has low insertion loss of 1.1 dB and high extinction ratio of 〉 12 dB.     

Optimization of line-tapered MMI devices using a genetic algorithm

We discuss the optimal design of line-tapered multimode interference （MMI） devices using a genetic algorithm （GA）. A 1×4 MMI device is designed as a numerical example. Compared with the conventional design based on self-imaging theory, the present method demonstrates superior performance with low in- sertion loss and small non-uniformity.     

Compact and broadband waveguide taper based on partial bandgap photonic crystals

Partial bandgap characteristics of parallelogram lattice photonic crystals are proposed to suppress the radiation modes in a compact dielectric waveguide taper so as to obtain high transmittance in a large wavelength range. Band structure of the photonic crystals shows that there exists a partial bandgap, The photonie crystals with partial bandgap are then used as the cladding of a waveguide taper to reduce the radiation loss efficiently. In comparison with the conventional dielectric taper and the complete bandgap photonic crystal taper, the partial bandgap photonic crystal taper has a high transmittance of above 85% with a wide band of 170 nm.     

A Multilayered Configuration Broadband Polarization Insensitive Reflector Utilizing a Multi-Subpart Profile Grating Structure

A multilayered configuration broad bandwidth polarization insensitive reflector realized by a multi-subpart profile grating structure is presented. The properties of the reflector are investigated by rigorous coupled-wave analysis. It is shown that over a broadband spectrum of 1.62-1.76μm, the reflector demonstrates high reflectivity （R 〉 99%）, low polarization-dependent loss （PDL〈 0.02 dB） and good angular insensitivity of about 29.6% for both transverse electric and transverse magnetic polarized waves.     

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.     

在硅片上沉积厚二氧化硅的火焰水解法研究

用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO2和B2O2-P2O2-SiO2光波导包层材料。并用扫描电镜(SEM)和X射线粉末衍射(XRD)方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO2时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出．火焰水解法形成的SiO2粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明．这种粉末是完全非晶态的。经过烧结以后,从扫描电镜照片可以明显看出硅基片上的SiO2薄膜出现龟裂。同时,X射线衍射测试结果表明有少量SiO2析晶。而通过在SiO2中掺入B2O3、P2O5,上述龟裂和析晶完全消失。用这种工艺制备的SiO2波导包层材料厚度达到20μm以上,表面光滑、没有龟裂,而且是完全玻璃态的,可以用于制备性能优良的各种硅基二氧化硅波导器件。     

掩埋式弱限制MMI的性能模拟

采用精确模式分析方法(EMA)对一种掩埋式折射率差为0.47%的弱限制MMI进行了数值模拟,通过和强限制MMI对比表明,这种弱限制的MMI可以实现良好的均衡性(9.7×10-4dB)和附加损耗(0.13dB),比强限制MMI具有更大的带宽,更好的宽度和长度容差性。虽然这种弱限制MMI的最小附加损耗和最佳均衡性不能在同一长度同时获得,但由于其良好的容差性,在最佳均衡性长度处仍能获得低于0.8dB的附加损耗。用紫外写入波导的方法制作掩埋式结构的弱限制MMI器件是可行的。     

Silicon electro-optic modulator with high-permittivity gate dielectric layer

A high-permittivity （high-k） material is applied as the gate dielectric layer in a silicon metal-oxide- semiconductor （MOS） capacitor to form a special electro-optic （EO） modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 μm in length.