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LBO晶体上1 064,532 nm倍频增透膜的镀制及性能分析   总被引:4,自引:1,他引:4       下载免费PDF全文
 用电子束蒸发沉积方法在X切LBO(X-LBO)晶体上镀制了两种不同膜系结构的1 064和532 nm倍频增透膜,其中一种膜系结构为基底/ZrO2/Y2O3/Al2O3/SiO2/空气,另一种为基底/0.5Al2O3/ZrO2/Y2O3/Al2O3/SiO2/空气,两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线,发现两种增透膜在1 064和532 nm处的反射率均小于0.5%,实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473 K的退火处理,结果发现两种膜系结构均表现了较优异的光学性能,氧化铝过渡层的加入使薄膜具有强的热应力性能。  相似文献   
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通过酸浸和模板合成处理,海泡石直接合成有序介孔二氧化硅和含铝的介孔二氧化硅. 海泡石用盐酸处理后120 ℃下在NaOH溶液中处理72 h, 得到具有HMS结构特征的介孔分子筛;在含铝的碱性溶液中处理后得到具有AlSBA结构的介孔分子筛. 并用SAXRD、BET、TPD表征了介孔分子筛的物相结构、比表面积、孔径分布和表面酸性. 两种介孔分子筛的比表面积分别为508 m2•g-1和946 m2•g-1,孔径分别为3.4 nm和3.9 nm,且孔径分布窄. NH3-TPD结果表明分子筛表面都有两个酸中心,随着Al原子的引入,表面酸性增强.  相似文献   
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Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB3O5 (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO2 interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3λ/4, 0.5λ/4 SiO2 interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO2 interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO2 interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5λ/4 SiO2 interlayer was not as good as the other two.  相似文献   
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HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.  相似文献   
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