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本文采用分子动力学方法研究了在剪切载荷作用下,Cu(100)扭转晶界对Cu柱屈服强度的影响.模拟结果发现,在加载过程中,低角度扭转晶界形成的位错网发生位错形核与扩展,位错之间的塞积作用提高了Cu柱的屈服强度;对于高角度扭转晶界,晶界发生滑动降低了Cu柱的屈服强度.同时发现,随着扭转角度的增加,Cu柱的屈服强度先增大,当扭转角度大于临界角度时,Cu柱的屈服应力逐渐减小.这表明剪切载荷作用下,两种不同的机理主导Cu柱的屈服,对于小于临界角度的扭转晶界,Cu柱的屈服由晶界位错形核和扩展机理主导,对于大于临界角度
关键词:
扭转晶界
分子动力学
位错形核
晶界滑移 相似文献
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Inhomogenous Dislocation Nucleation Based on Atom Potential in Hexagonal Noncentrosymmetric Crystal Sheet 下载免费PDF全文
By introducing internal degree, the deformation of hexagonal noncentrosymmetric crystal sheet can be described by the revised Cauchy-Born rule based on atomic potential. The instability criterion is deduced to investigate the inhomogeneous dislocation nucleation behavior of the crystal sheet under simple loading. The anisotropic characters of dislocation nucleation under uniaxial tension are studied by using the continuum method associated with the instability criterion. The results show a strong relationship between yield stress and crystal sheet chirality. The results also indicate that the instability criterion has sufficient ability to capture the dislocation nucleation site and expansion. To observe the internal dislocation phenomenon, the prediction of the dislocation nucleation site and expansion domain is illustrated by MD simulations. The developed method is another way to explain the dislocation nucleation phenomenon. 相似文献
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Based on viscoelastic Kelvin.model and:nonlocal relationship of strain and stress, a nonlocal constitutive relationshila of viscoelasticity is obtained and the strain response of a bar in tension is studied, By transforming governing equation of the strain analysis into Volterra integration form and by choosing a symmetric exponential form of kernel function and adapting Neumann series, the closed-form s.olution of strain field of the bar is obtained.: The creep process of the bar is presented: When time approaches infinite, the strain of bar is equal to the one of nonlocal elasticity 相似文献
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位错的攀移运动对高温下晶体材料的塑性行为有重要影响,为了能够有效揭示攀移的物理本质及其对塑性行为的作用,本文基于点缺陷扩散理论,通过将体扩散和管扩散机理的共同作用与三维离散位错动力学耦合,建立了适用条件更广的位错攀移模型. 利用此模型我们模拟了单个及多个棱柱型位错环的收缩变形过程,发现影响位错攀移速率的决定因素不是传统理论认为的机械攀移力,而是位错周围(体扩散)及位错段上(管扩散)的空位浓度梯度. 该模型也能够完全重现棱柱型位错环群的粗化过程中不同位错环半径及晶体内平均空位浓度随时间变化的三个阶段.
关键词:
位错攀移
点缺陷扩散理论
位错动力学
棱柱位错环 相似文献
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Characteristic Sizes for Exhaustion-Hardening Mechanism of Compressed Cu Single-Crystal Micropillars 下载免费PDF全文
The stress-strain response of Cu single-crystal compression micropillar containing initial dislocation network is investigated by three-dimensional discrete dislocation dynamics simulations. The results demonstrate that the stress-strain curves can be divided into three distinct types with increasing the sizes of micropillars: the three- stage exhaustion hardening, the multi-stage mixed hardening and the two-stage conventioned forest hardening. The characteristic sizes of the micropillars is determined for the second type of the curves to be 500-700 nm. 相似文献
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