Dynamical properties of two-band superlattices with strong interband coupling in real space under the action of ac and dc－ac fields

Within a two-band tight-binding model driven by ac and dc－ac electric fields, using numerical methods, we investigate the dynamics of electrons and the quasi-energy spectrum of the system with strong interband coupling in real space. We find that when the bandwidth is suppressed to a value much smaller than the field frequency, the dynamical localization can exist in the system. The corresponding regions are found for the occurrence of dynamical localization in the parameter space.     

高密度流体He+H_2混合物物态方程研究

选择高密度流体He +H2 混合物作为研究对象 ,用Ree混合规则和vanderWaals单组分流体变分微扰理论加量子力学一级修正模型编制计算程序。作为对计算模型及其程序的检验 ,首先用已有的α exp 6优化势参数 ,计算了T =30 0K的He +H2 混合物的等温相平衡线 ,得到了与实验值和分子动力学 (MD)数值模拟一致的结果 ,然后进一步计算了 0～ 60GPa和 5 0～ 70 0 0K压力温度范围内的流体He+H2 混合物 (He∶H2 分别为 1∶1、1∶3、3∶1摩尔比 )的高压物态方程。与Monte Carlo模拟数据所进行的比较表明 ,在低温下 ,量子力学修正对热力学量的计算是重要的     

Stark阶梯的非线性修正

本文借助SU(2)对称性求得了跳跃积分随格点变化时电子在外电场作用下的能谱和局域态的封闭解,结果发现,电子能谱除含有耦合的Stark阶梯外,还明显地依赖于电场势的非线性项,在弱场区域,非线性项将起主导作用,只有在强场区域,激发谱才呈现较为明显的Stark阶梯,其临界场强对半导体超晶格为200kV/m,这一结论与实验观测高度吻合。     

原子氢在Be(1010)薄膜上吸附的第一性原理计算

对原子氢在Be(1010)薄膜表面的吸附性质做了第一性原理计算研究.根据原子面间距的不同，可把Be(1010)表面分为两种.计算结果表明，原子氢在这两种表面上的吸附性质显著不同.为阐明和分析这些不同，系统计算和分析了Be(1010)薄膜的表面电子结构、电子功函数、平均静电势和局域电荷密度.这些物理量都自洽地表明，吸附过程中原子氢和表面铍原子间的电荷转移过程对于两种表面是完全不同的.对于L型表面来说，电荷由吸附原子氢向表面Be原子层转移，而对于S型表面而言，电荷转移过程恰恰相反. 关键词： 表面能 功函数 量子尺度效应     

AN EFFECTIVE TWO-LEVEL CHANNEL FOR AN IMPURITY IN A SUPERLATTICE

The eigenstates and eigenspectrum of a charged particle in a one-dimensional semiconductor superlattice with an impurity under the action of a dc electric field are investigated employing the single-band tight-binding model. We find that the system undergoes a series of avoided crossings, at which resonant oscillations between the impurity and its nearest neighbour occur if appropriate conditions are met, suggesting an effective two-level approximation. This phenomenon shows that introducing an impurity in a perfect lattice provides a promising structure for the observation of terahertz radiation.     

Effect of external noise on the dynamical localization of two coupling electrons in quantum dot array

The effect of external noise, which is characterized by an Ornstein--Uhlenbeck process, on the dynamical localization of two coupling electrons in a quantum dot array under the action of an ac electric field is studied. A numerical solution of the stochastic equations is obtained by averaging over stochastic trajectories. The results show that the external noise may destroy the dynamical localization, but the anti-noise capacity of the system is stronger when the two electrons are localized at the ends of the quantum dot array.     

Dynamical Localization in a Two—Electron Quantum Dot Molecule Biased by a dc Voltage

We study the dynamics of two interacting electrons in a coupled-quantum-dot system with a time-dependent external electric field. The numerical results of the two-particle states reveal that the dynamical localization still exists under appropriate dc and ac voltage amplitudes. Such localization is different from the stationary localization phenomenon. Our conclusion is instructive for the field of quantum function devices.     

Transport characteristics of Rabi oscillations in the two-band superlattices

We investigated the transport characteristics of Rabi oscillations, by using numerical methods, within a two-band tight-binding model driven by dc－ac electric fields. We found that Rabi oscillations make the long-time average current a sharply change, i.e. the current have resonant peaks appearing. Rabi oscillations are destroyed by dephasing; these peaks are the signatures of Rabi oscillations on the current response. The strong interband coupling will change the conditions of Rabi oscillations and, correspondingly, changes the places where the current resonant peaks appear.     

方波电场驱动下的Rabi振荡

研究了方波电场驱动下的双Bloch带的紧束缚模型.借助Fourier分析,得到了在弱耦合极限下Rabi振荡及Rabi频率的解析解;这些结果均由电子的数值演化所证实.     

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.