排序方式: 共有19条查询结果,搜索用时 23 毫秒
1.
以TTA为配体合成了新的共掺杂稀土配合物Tb0.5Eu0.5(TTA)3Dipy,通过与PVK的掺杂,制备了以PVK:Tb0.5Eu0.5(TTA)3 Dipy为发光层的结构为:ITO/PVK:Tb0.5Eu0.5(TTA)3Dipy/BCP/Al的发光器件,在直流电压的驱动下,发现了铕在612 nm处的特征发射,和PVK在410 nm处的发光.此外,还观察到了位于490 nm处的新的发光峰,通过分析研究,认为新的发光来自于稀土配合物的配体和BCP之间相互作用形成的电致激基复合物.用PBD代替了BCP作为电子传输层,制备了结构为:ITO/PVK:Tb0.5Eu0.5(TTA)3DiPy/PBD/Al的发光器件,得到了纯的红色发光. 相似文献
2.
通过扫描电镜和X射线衍射对SiO2衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在SiO2衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100nm,且薄膜有较好的结晶取向,呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm,绝缘层SiO2的厚度为250nm,器件的沟道宽长比(W/关键词:
有机薄膜晶体管
并五苯薄膜
酞菁铜薄膜
μEF)')" href="#">场效应迁移率(μEF) 相似文献
3.
制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO2作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane (OTS),phenyltrimethoxysilane (PhTMS),来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V
关键词:
有机薄膜晶体管
自组装单分子层
场效应迁移率
低栅极调制电压 相似文献
4.
Characteristics of pentacene organic thin film transistor with top gate and bottom contact 下载免费PDF全文
High performance pentacene organic thin film transistors (OTFT) were
designed and fabricated using SiO2 deposited by electron beam
evaporation as gate dielectric material. Pentacene thin films were
prepared on glass substrate with S--D electrode pattern made from ITO
by means of thermal evaporation through self-organized process. The
threshold voltage VTH was --2.75± 0.1V in 0---50V
range, and that subthreshold slopes were 0.42± 0.05V/dec. The
field-effect mobility (μEF) of OTFT device increased with
the increase of VDS, but the μEF of OTFT device
increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current
ratio was 0.48× 105 and subthreshold slope was 0.44V/dec.
The μEF was 1.10cm2/(V.s), threshold voltage
was --2.71V for the OTFT device. 相似文献
5.
稀土配合物有机电致发光器件中电致激基复合物发光性质的研究 总被引:1,自引:0,他引:1
以稀土配合物Tb0.5 Eu0.5(thienyhrifluroacetone)3-2,2-biphenyl(简称Tb0.5 Eu0.5(TTA)3Dipy)作为发光层,制备了结构为ITO/PVK:Tb0.5 Eu0.5(TTA)3Dipy/BCP/Alq3/A1的OLED发光器件,在直流电压的驱动下,发现了铕在612nm处的特征发射和PVK在410nm处的发光。此外,还观察到了位于490nm处的新的发光峰。通过改变不同的器件结构,分析研究了新的发光峰的性质,认为新的发光来自于稀土配合物的配体和BCP之间相互作用形成的电致激基复合物。 相似文献
6.
The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si substrate 下载免费PDF全文
This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p^+-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction. This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p^+-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8A(1A=0.1 nm) and 14.9A, respectively. Above the critical thickness of the thin film phase, lamellar structures are found with an increasing fraction with the increase of the film thickness. When the film thickness is fixed, the fraction of lamellar structures increases with the increase of annealing temperature. These lamellar structures are identified as the second phase with a interplanar distance of 14.9A corresponding to the pentacene triclinic phase. Furthermore, the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6A/s is observed. 相似文献
7.
在不同衬底上制备的ZnO薄膜透射率的研究 总被引:1,自引:0,他引:1
采用反应磁控溅射在不同结构衬底上生长ZnO薄膜,通过X-ray衍射(XRD)及透射光谱来分析薄膜的成膜情况,并得出在Al2O3/AlN复合基上溅射沉积的ZnO薄膜比单独在AlN薄膜衬底的结晶质量好且透过率也较高.而经不同的快速热退火温度验证,发现在400 ℃时,ZnO薄膜的结晶化及在(002)方向上的择优取向达到最好,并在可见光范围内的平均透过率达到88%以上.当退火温度超过450℃时,温度过高改变了ZnO薄膜的内部结构,使其氧原子和锌原子发生了较大距离的位移,导致薄膜内部缺陷的增多,从而存在过多的晶界,增加了其薄膜的散射机制,使光的透过性变差,退火温度为500℃时,薄膜的平均透过率为80%. 相似文献
8.
分别以SiO2和PMMA为绝缘层材料制备了底栅顶接触结构的OTFT器件,得到以PMMA为绝缘层的器件具有更好的性能,其场效应迁移率为0.207 cm2·Vs-1,开关电流比为4.93×103,阈值电压为-4.3 V;而以SiO2为绝缘层的器件,其场效应迁移率仅为0.039 cm2·Vs-1,开关电流比为5.98×102,阈值电压为-5.4 V。为分析器件性能差异的原因,测得了SiO2和PMMA薄膜表面的AFM图谱及其上沉积并五苯薄膜后的AFM和XRD图谱。通过AFM图谱发现PMMA表面较SiO2表面粗糙度小,其表面粗糙度的均方根值为0.216 nm,而二氧化硅薄膜表面粗糙度的均方根值为1.579 nm;且发现在PMMA上生长的并五苯薄膜的成膜质量优于在SiO2,具有较大的晶粒尺寸和较少的晶粒间界。通过XRD图谱发现在PMMA上生长的并五苯薄膜具有明显的衍射峰,进一步证明了在PMMA上生长的并五苯薄膜具有更好的结晶状况,将更有利于载流子的传输。 相似文献
9.
Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors 下载免费PDF全文
In order to enhance the performance of regioregular
poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs),
RR-P3HT FETs are prepared by the spin-coating method followed by vacuum
placement and annealing. This paper reports that the crystal
structure, the molecule interconnection, the surface morphology,
and the charge carrier mobility of RR-P3HT films are affected by
vacuum relaxation and annealing. The results reveal that the
field-effect mobility of RR-P3HT FETs can reach 4.17×10^ -
2~m2/(V.s) by vacuum relaxation at room temperature
due to an enhanced local self-organization. Furthermore, it reports
that an appropriate annealing temperature can facilitate the crystal
structure, the orientation and the interconnection of polymer
molecules. These results show that the field-effect mobility of
device annealed at 150~℃ for 10 minutes in vacuum at atmosphere
and followed by placement for 20 hours in vacuum at room temperature
is enhanced dramatically to 9.00×10^ - 2
~cm2/(V.s). 相似文献
10.
Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors 下载免费PDF全文
With the aim of understanding the relationships between
organic small molecule field-effect transistors (FETs) and organic
conjugated polymer FETs, we investigate the thickness dependence of
surface morphology and charge carrier mobility in pentacene and
regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect
transistors. On the basis of the results of surface morphologies and
electrical properties, we presume that the charge carrier mobility
is largely related to the morphology of the organic active layer. We
observe that the change trends of the surface morphologies (average
size and average roughness) of pentacene and RR-P3HT thin films are
mutually opposite, as the thickness of the organic layer increases.
Further, we demonstrate that the change trends of the field-effect
mobilities of pentacene and RR-P3HT FETs are also opposite to each
other, as the thickness of the organic layer increases within its
limit. 相似文献