Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the peak-shift method

Transient thermal impedance of GaN-based high-power white light emitting diodes （LEDs） is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature （JT） rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks are equivalent at pulsed and continuous currents. Moreover, the difference in peak wavelength when a LED is driven by pulsed and continuous currents initially decreases then increases with increasing pulse width. Thus, selecting an appropriate pulse width decreases errors in JT measurement.